SI6966EDQ ,Dual N-Channel 2.5-V (G-S) MOSFET, ESD ProtectedS-60704—Rev. B, 23-Nov-981Si6966EDQVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI6967DQ ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-59525—Rev. C, 12-Oct-982-1Si6967DQVishay Siliconix
SI6966EDQ
Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected
VISHAY
Si6966EDQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.030@VGS=4.5V $5.2
0.040@VGs=2.5V ce4.5 ESD Protected
4000 V
TSSOP-8
D1 q El D2
S, CE Si6966EDQ El S2 100 Q 100 Q
SI E S2 G1 G2
F El G2
Top Ihew
N-Channel N-Channel
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS i 12
TA = 25°C cl: 5.2
Continuous Drain Current (To = 150°c)a, b ID
TA = 70°C 1 4.0 A
Pulsed Drain Current IDM i30
Continuous Source Current (Diode Conduction)' b ls 1.25
TA = 25°C 1.25
Maximum Power Dissipation' b PD W
TA = 70°C 0.72
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
ts10sec RthJA 110
Maximum Junction-to-Ambienta "C/W
Steady State RthJA 115
a. Surface Mounted on FR4 Board.
b. t= :10 sec.
Document Number: 70809 www.vishay.com
S-60704-Rev. B, 23-Nov-98
Si6966EDQ
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 WA 0.6 V
Gate-Body Leakage lsss VDS = 0 V, VGS = i4.5 V i 100 nA
VDs=+20V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 20 V, VGS = 0 V, TJ = 55°C 25 liA
On-State Drain Currenta low”) VDS a 5 V, VGS = 4.5 V 30 A
VGS = 4.5 V, ID = 5.2 A 0.021 0.030
Drain-Source On-State Resistance" rDS(0n) Q
VGS = 2.5 V, b = 4.5 A 0.028 0.040
Forward Transconductancea gfs VDs = 10 V, ID = 5.2 A 20 S
Diode Forward Voltagea VSD ls = 1.25 A, VGS = 0 V 0.65 1.2
Dynamicb
Total Gate Charge % 15 25
Gate-Source Charge Qgs V93 = 15 V, VGS = 4.5V, ID = 5.2 A 2.5 nC
Gate-Drain Charge di 4.5
Turn-On Delay Time thon) 100 200
Rise Time tr VDD = 10 V, RL = 10 g 130 250
Turn-Off Delay Time thott) lo E 1 A, VGEN = 4.5 V, RG = 6 Q 420 800 ns
Fall Time If 220 450
Source-Drain Reverse Recovery Time trr IF = 1.25 A, di/dt = 100 Alps 210 500
Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70809
S-60704-Reu. B, 23-Nov-98
VISHAY
Si6966EDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
30 l 1
VGS = 4.5 thru 3 V
2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.08
Iri 0.06
I 0.04 Vss = 2.5 v I
(2°: VGS = 4.5 V
L 0.02
6 12 18 24 30
ID - Drain Current (A)
4.5 Gate Charge
A I/os = 15 V
ty 3 6 ID = 5.2 A
O 3 6 9 12 15
Q9 - TotaIGate Charge(nC)
rDS(on) - On—Resistance (Q)
I D « Drain Current
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc-- 125°C
25°C / l
0.5 1.0 1.5 2.0 2.5 3.0
I/cs - Gate-to-Source Voltage (V)
Capacitance
N,,, Coss
's-.........,.
0 4 8 12 16 20
V93 - Drain-to-Source Voltage(V)
1 6 On-Resistance vs. Junction Temperature
VGS = 4.5 V
1 4 i ko-- 5.2 A /
v,.,,,,,,-''''''"
1.2 //
0.8 ,/
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 70809
S-60704-Rev. B, 23-Nov-98
www.vishay.com
Si6966EDQ
Vishay Siliconix
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.08
A 10 a 0.06 l
1..C ii;
E TJ = 150°C 8
g 35 ID = 5.2 A
o 8 o 04
w fi] 0 02 '"s-,
1 0.00
0 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l I 30
ID = 250 0A "
0.2 "s, )
"s,, 20 (
0 -0.0 l
E '- 15
g -0.2 I fl
g 's, 10 \
> "ss, l
- x 'N
0.4 's, .
-0.6 0
-50 -25 0 25 50 75 100 125 150 001 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
__L: _
l, Duty Cycle, D = T2
2. Per Unit Base = RmJA = 115°
3. TJM - TA = PoMZthoA(t)
4. Surface Mounted
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70809
4 S-60704-Reu. B, 23-Nov-98
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