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SI6963
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Si6963DQ G2 G1 S2 S1 S2 S1 D2 D1 April 2001 Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 0.070 Ω @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). • Low gate charge Applications • Load switch • High performance trench technology for extremely low R DS(ON) • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –20 V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1) A D –3.8 – Pulsed –30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +150 Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6963 Si6963DQ 13’’ 12mm 3000 units Si6963DQ Rev. A (W) 2001
