SI6943DQ ,20-V (D-S) DualS-49534—Rev. E, 06-Oct-972-1Si6943DQVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI6943DQ ,20-V (D-S) Dual
SI6943DQ ,20-V (D-S) DualS-49534—Rev. E, 06-Oct-972-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curre ..
SI6946DQ ,20-V (D-S) Dual FaxBack 408-970-5600S-49534—Rev. E, 06-Oct-972-1Si6946DQVishay Siliconix
SI6943DQ
20-V (D-S) Dual
VISHAY
Si6943DQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.10@sz= -4.5V i2.5
0.18@Vss= -2.51/ $1.9
TSSOP-8
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s, CE Si6943DQ El S2
SI IE El S2
Gl IE E51 G2
Top Mew
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGS d: 8
TA = 25°C ck 2.5
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C k 2.0
Pulsed Drain Current IBM 120
Continuous Source Current (Diode Conduction)" ls i1
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RmJA 125 "'C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
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Document Number: 70176 www.vishay.com
S-49534-Rev. E, 06-Oct-97
Si6943DQ
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsah) VDS = VGs, ID = 250 “A -0.6 V
Gate-Body Leakage less VDs = 0 V, VGS = i 8 V i 100 nA
Vros=-12VVss=0V -1
Zero Gate Voltage Drain Current loss uA
VDS=-12V,VGS=0V,TJ=70°C -5
Vros=-5V,Vss=-4.5V -10
On-State Drain Currenta 'D(on) A
VDs=-5V,VGs=-2.5V -4
Kas-- -4.5V, ID=2.5A 0.10
Drain-Source On-State Resistance" rDs(on) Q
VGs=-2.5VID=1.9 A 0.18
Forward Transconductancea 9ts v03 = -9 V, ID = -2.5 A 7 S
Diode Forward Voltage3 VSD ls = -1.0 A, VGS = 0 V -1.2
Dynamicb
Total Gate Charge % 9 20
Gate-Source Charge Qgs VDs = -6 V, VGs = -4.5 V, ID = -2.5 A 2 n0
Gate-Drain Charge di 3
Turn-On Delay Time tdwn) 21 40
Rise Time tr VDD = -6 V, RL = 6 Q 35 7O
Turn-Off Delay Time tam) '0 E -1.0 A, VGEN = -4-5 V, Re = 6 Q 43 80 ns
Fall Time tf 22 4O
Source-Drain Reverse Recovery Time trr IF = -1.0 A, di/dt = 100 Alps 35 70
a. Pulsetest; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
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DocumentNumber: 70176
S-49534-Rev. E, 06-Oct-97
VISHAY Si6943DCt
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 _ I 10
/ VGS = 8 thru 4 V
"ig" ,/ g.'.
E 12 E 6
tl? I'
Es 8 E 4
o l c:
I 2 V I
4 2 Tc=125°C jr 25°C
d 2/ -55°C
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.25 1500
A 0.20 1200
8 / tf
g 0.15 o 900
fr,' VGS = 2.5 v / li,
/l;' a,.,,,,-''"' §
8 0.10 VGS = 4.5 v 8 600
b' 0.05 300
0.00 0
O 2 4 6 8 IO 0 2 4 6 8 IO 12
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge 1 8 On-Resistance vs. Junction Temperature
8 1 . 1 l 1
VGS = 4.5 V VGS = 4.5 V
ID=2.5A 1.5g ID=2.5A
VGs — Gate—to-Source Voltage(V)
r DS(on)- On-Resistance( Q)
(Normallzed)
o 3 6 9 12 15 -50 -25 o 25 50 75 100 125 150
% - Total Gate Charge (nC) Tu - Junction Temperature (°C)
Document Number: 70176
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S-49534-Rev. E, 06-Oct-97
Si6943DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 = o a
'it T: 150 C V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V30 - Source-to-Drain Voltage (V)
Threshold Voltage
3 ID = 250 PA s..,,,,----'''"'''''''
E 0 0 ---'''" v
> --- it
g." -"" f?
-50 -25 0 25 50 75 100 125 150
To - Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 2.5A
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.001 0.01 0.1 1 10 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T2
2. Per Unit Base = RthJA =125°CIW
3. TJM - TA = PDMZmJAm
4. Surface Mounted
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DocumentNumber: 70176
S-49534-Rev. E, 06-Oct-97
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