SI6928DQ ,30-V (D-S) Dual FaxBack 408-970-5600S-56945—Rev. C, 23-Nov-982-1Si6928DQVishay Siliconix
SI6928DQ
30-V (D-S) Dual
VISHAY
Si6928DQ
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (O) ID (A)
30 0.035@VGS=10V $4.0
0.050 @ VGS = 4.5 V cl: 3.4
TSSOP-8
D1 . E D2
31 Si6928DQ E1 S2
SI Ctsl S2
G1 3] G2
Top View
N-Channel MOSFET
t32o-l
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGS i20
TA = 25°C i4.0
Continuous Drain Current (To = 150°C)a ID
TA = 70°C d: 3.2
Pulsed Drain Current los, $20
Continuous Source Current (Diode Conduction)" ls 1.25
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 125 "CAN
a. Surface Mounted on FR4 Board! s 10 sec.
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Document Number: 70663
S-56945-Rev. C, 23-Nov-98
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Si6928DQ
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vesah) Vos = VGS, ID = 250 " 1.0 V
Gate-Body Leakage IGSS Vos = 0 V, VGS = i 20 V i 100 nA
Zero Gate Voltage Drain Current IDss Vos = 30 V, VGS = 0 V 1 y1A
VDs=30V,VGs=0V,To=55''C 5
On-State Drain Currenta loom Vros 2 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 4.0 A 0.027 0.035
Drain-Source On-State Resistancea roswn) Q
VGS = 4.5 V, ID = 3.4 A 0.038 0.050
Forward Transconductancea gig VDs = 15 V, ID = 4.0 A 13
Diode Forward Voltagea N/so ls = 1.25 A, VGS = o v 0.73 1.2 V
Dynamicb
Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 4.0 A 9 14
Total Gate Charge 09, 17.5 30 HO
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 4.0 A 4.0
Gate-Drain Charge di 2.5
Turn-On Delay Time td(on) 12 20
Rise Tlme tr VDD = 15 V, RL = 6 C2 9 20
Turn-Off Delay Time tdmm ID E 1 A, VGEN = 10 v, Rs = 6 Q 25 50 ns
Fall Time tf 20 40
Source-Drain Reverse Recovery Time tr, IF = 1.25 A, dildt = 100 Alps 25 60
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70663
S-56945-Rev. C, 23-Nov-98
VISHAY
Si6928DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 I l
VGS = 10 thru 5 V
Ci:: ii.::
E 12 E
's 'r,
'tls" 8 'it"
0 2 4 6 8 10
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V - C"
8 0.04 - VGS - 4.5 v _..- e
g _...--. 8
d'! 0.03 I/cs = 10 V g
L 0.02 l
'- 0.01
0 4 8 12 16 20
ID - Drain Current (A)
10 Gate Charge
VDS=15V /
8- ko=4.0A /
V GS — Gate-to-Source Voltage (V)
I’DS(on)— On-Resistance( Q )
(Normalized)
0 4 8 12 16 20
Q9 - Total Gate Charge(nC)
Transfer Characteristics
Tc = 125°C //
25°C y
-55''C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
K Crss
o 6 12 18 24 30
VDs - Drain-to-Source Voltage (V)
1 8 On-Resistance vs. Junction Temperature
1.6 - = 10 V "
ID = 4.0 A w,,-'''"
1.4 w,,,,,.,,,,-"''"
1 2 //
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70663
S-56945-Rev. C, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si6928DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.12
A 10 Ct 0.09
lc--,, .3 ID - 4.0 A
g T J = 150°C ' 0.06
sn <7; 0 03 'mm-_,
0 0.2 0.4 0.6 0.8 1.0 1.2 1 3 5 7 9
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 40
o 3 "s, 32 "
"s, ID = 250 HA
8 0.0 g 24
E" _ E 16
5 0.3 I
-0.6 8 N
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
--lt1l--
"'-t2-'"
Thermal Impedance
1. Duty Cycle, D = T1
2. Per Unit Base = RthJA =
N orma l ized Effective Tra nsient
3. Tos - TA = PDMZthJAm
4. Surface Mounted
Single Pulse
10-4 Itt-3 10‘2 IO-l 1
Square Wave Pulse Duration (sec)
125°CNV
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2-4 S-
Document Number: 70663
56945-Rev. C, 23-Nov-98
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