SI6926DQ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low R DS(ON)• Motor ..
SI6926DQ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N-Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 V DS ..
SI6928DQ ,30-V (D-S) Dual FaxBack 408-970-5600S-56945—Rev. C, 23-Nov-982-1Si6928DQVishay Siliconix
SI6926DQ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
SI6926DQ G1 G2 S1 S2 S1 S2 D1 D2 April 2001 SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 V DS(ON) GS gate version of Fairchild's Semiconductor’s advanced R = 0.035 Ω @ V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). • Low gate charge Applications • Load switch • High performance trench technology for extremely low R DS(ON) • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 5.5 A D – Pulsed 30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6926 SI6926DQ 13’’ 12mm 3000 units SI6926DQ Rev A(W) 2001
