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SI6874EDQ
Common Drain Dual N-Channel 20-V (D-S) MOSFET
VISHAY
Si6874EDQ
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.026 @ VGS = 4.5 V 6.5
20 0.031@VGS=2.5V 5.8 ESD Protected
0.039 @ VGS = 1.8 V 5.0 3000 V
TSSOP-8
SI [I o E D 2.4 KO : 2.4 k9 tc
G1 I: Si6874EDQ D F _ G2 _
S2 E El D
G2 4 D
Top View
N-Channel N-Channel
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS i 12
TA = 25°C 6.5 5.3
Continuous Drain Current (TJ = 150°C)3 ID
TA = 85°C 4.7 4.2 A
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" ls 1.50 1.10
TA = 25°C 1.67 1.20
Maximum Power Dissipation" PD W
TA = 85°C 1.06 0.76
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 60 75
Maximum Junction-to-Ambient" RthJA
Steady State 86 105 °CNV
Maximum Junction-to-Foot (Drain) Steady State RthJF 38 45
a. Surface Mounted on 1" x 1" FR4 Board.
DocumentNumber: 71252
S-01753-Rev. A, 14-Aug-00
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Si6874EDQ
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = I/cs, ID = 250 11A 0.40 V
VDS=0V.VGS=:1:4.5V i1
Gate-Body Leakage less
VDs=0V,Vcs=ce12V $10 mA
VDS=16V,VGS=0V 1
Zero Gate Voltage Drain Current loss [IA
VDS= 16V, VGS=0V, TJ=85°C 20
On-State Drain Currenta low”) VDS = 5 V, VGS = 4.5 V 20 A
VGS = 4.5 V, ID = 6.5 A 0.021 0.026
Drain-Source On-State Resistancea rDS(on) VGs = 2.5 V, b = 5.8 A 0.025 0.031 g
VGS =13 v.10 = 5.0 A 0.031 0.039
Forward Transconductancea gts VDS = 10 V, ID = 6.5 A 25 S
Diode Forward Voltagea N/so IS = 1.5 A, VGs = 0 V 0.65 1.1
Dynamicb
Total Gate Charge 09 12.5 18
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2.7 nC
Gate-Drain Charge di 2.7
Turn-On Delay Time td(on) 0.7 1.0
Rise Tlme tr VDD = 10 V, RL =10 Q 1.3 2.0 us
Turn-Ott Delay Time tdm ID E 1 A, VGEN = 4.5 V, R6 = 6 Q 5.5 8.0
Fall Time tf 4.6 7.0
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
0 ow''"
o 3 6 9 12 15 18
V68 - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10,000
less — Gate Current (MA)
VCs - Gate-to-Source Voltage (V)
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Document Number: 71252
S-01753-Rev. A, 14-Aug-00
VISHAY
Si6874EDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
30 l l
- VGS = 5 thru 2 V
ci: iii.:;
E 18 E
E 12 Es
Cl 1.5 V D
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
ttn.Resistantte vs. Drain Current
0.06 f
A 0.05
G" il?
E 0.04 f 8
S' VGS = 1.8 V r,,,,,,,,,,,) E
I VGS = 4.5 V ('I)
"il,'" 0.02 O
O 6 12 18 24 30
ID - Drain Current (A)
5 Gate Charge
VDS=10 v w''''"
4_|D=6.5 A /
3 o,,,,,,,,-'''''"
wp''''"
rosmn) — On-Resistance (9)
(Normalized)
V GS — Gate—to—Source Voltage (V)
0 3 6 9 12 15
Q9 - Total Gate Charge(nC)
Transfer Characteristics
Tc = C'" //
0.5 1.0 1.5 2.0 2.5
N/ss - Gate-to-Source Voltage (V)
Capacitance
Ics......, Ciss
\ Coss
"ss......
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
- ID = l
6.5 A "
",w''"
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
DocumentNumber: 71252
S-01753-Rev. A, 14-Aug-00
www.vishay.com . FaxBack 408-970-5600
Si6874EDQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.08
A G 0.06
s 'iif
E T: = 150°C ie'
E .0 ID - 6.5 A
co 8 0 04
5 E. .
3 5 0.02
o 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 l l 32
ID = 250 0A
0.2 'ss,
g -0.0 it \
g "ss, g 16 l
tt -0 2 _ CL \
8 's, N
> "ss, N
-0 4 \ "N,
"tttttm
-0.6 0
-50 -25 0 25 50 75 100 125 150 10-2 1O-1 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
a, 0.2
g Notes:
a 0.1 -T-
ff 0.05
Normalized Effective Transient
_.L: _
0.02 1. Duty Cycle, D = T2
2. Per Unit Base = RmJA = 86°CNV
Single Pulse 4. Surface Mounted
3. TJM - TA = PDMZthJAm
10-4 IO-:, 1o-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71252
S-01753-Rev. A, 14-Aug-00
VISHAY
Si6874EDQ
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
g Duty Cycle = 0.5
s a 0.2
"if',' g
B a 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71252 www.vishay.com . FaxBack 408-970-5600
S-01753-Rev. A, 14-Aug-00 5
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