SI6801DQ ,N-and P-Channel, Reduced Qg, Fast Switching MOSFET FaxBack 408-970-5600S-56944—Rev. D, 23-Nov-982-1Si6801DQVishay Siliconix
SI6801DQ
N-and P-Channel, Reduced Qg, Fast Switching MOSFET
VISHAY
Si6801DQ
Vishay Siliconix
N- and P-Channel, Reduced 09, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (O) ID (A)
O.160@VGS=4.5V $1.9
N-Channel 20
O.260@VGS= 3.0V cel.5
0.190@VGS=-A.5N/ cel.?
P-Channel -20
0.280@VGs=-3.0V cel.3
TSSOP-8
D1 II q El D2
SI LE Si6801DQ CEI S2
SI IE El S2
G1 I: Csl G2
Top View
t31o-l
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 20 -20 V
Gate-Source Voltage VGS i 12
TA=25°C $1.9 cel.?
Continuous Drain Current (TJ = 150°C)a ID
TA=70°C 11,5 11.3 A
Pulsed Drain Current 'DM cl: 8
Continuous Source Current (Diode Conduction)" Is 1.0 -1.0
TA = 25''C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RNA 125 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70187
S-56944-Rev. D, 23-Nov-98
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Si6801DQ
Vishay Siliconix
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SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Kas, ID = 250 MA N-Ch 0.6
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = -250 WA P-Ch AJ.6
N-Ch i 100
Gate-Body Leakage IGSS Vos = 0 V, VGS = d: 12 V nA
P-Ch :t 100
Vos = 20 V, VGs = 0 V N-Ch 1
Vos = -20 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS ”A
VDS = 20 V, VGS = 0 V, To = 70°C N-Ch 25
VDs = -20 V, VGS = 0 V, TJ = 70°C P-Ch -25
VDS = 5 V, VGS = 4.5 V N-Ch 6
On-State Drain Currenta IMO”) A
VDS = -5 V, VGS = -A.5 V P-Ch -6
VGS=4.5V, ID=1.9A N-Ch 0.120 0.160
Vss=-4.5 V, ID=-1.7A P-Ch 0.155 0.190
Drain-Source On-State Resistances rDs(on) Q
VGS = 3.0 V, ID =1.5 A N-Ch 0.160 0.260
VGS = -3.0 V, ID = -1.3 A P-Ch 0.210 0.280
VDS= 15 v, ID =1.9A N-Ch 5.4
Forward Transconductancea gts S
VDS = -15 V, ID = -1.7 A P-Ch 4.0
ls = 1.0 A, VGS = 0 v N-Ch 0.77 1.2
Diode Forward Voltagea VSD V
Is = -1.0 A, VGs = 0 V P-Ch -0.77 -1.2
Dynamic''
N-Ch 1.7 3.5
Total Gate Charge Qg
N-Channel P-Ch 3.5 7.0
G S C Q VDS= 3.5V, VGS=4-5 V, |D=0.3A N-Ch 0.26 C
ate- ource har e n
g gs P-Channel P-Ch 0.76
VDS = -3.5 V, VGS = -4.5 V
lo = -0.3 A N-Ch 0.41
Gate-Drain Charge di
P-Ch 0.70
N-Ch 7.3 15
Turn-On Delay Time tam)
P-Ch 6.0 15
N-Channel
N-Ch 10.0 20.0
Rise Time tr VDD = 3.5 V, RL = 11.5 Q
ID _ 0.3 A, VGEN = 4.5 V, RG = 6 Q P-Ch 10.0 20.0
T Off D I Ti P-Channel N-Ch 11.0 20.0
urn- e ay Ime td(ott) VDD = -3.5 V, RL = 11.5 Q ns
b a -0.3 A, VGEN = -4.5 v, Rs = 6 Q P-Ch 10.0 20.0
N-Ch 6.0 15
Fall Time tt
P-Ch 7.0 15
Source-Drain t N-Channel-IF = 1.0 A, di/dt = 100 Alps N-Ch 31 60
Reverse Recovery Time n P-Channel-IF = -1.0 A, di/dt = 100 Alps P-Ch 35 60
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-56944-Rev. D, 23-Nov-98
VISHAY
Si6801DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Output Characteristics
VGS = 4.5, 4, 3.5, 3V
6 2.5 v
E r.---"'""-"
2 /"''"
'il 2 v
0 2 4 6 8
I/ns - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.32
o'si, 0.24 J
a VGS = 3 V m,...,,,.,-'''''"
6 0.16 Vss=4.5V _
[f 0.08
0 2 4 6 8
VGs — Gate—to-Source Voltage (V)
ID - Drain Current (A)
Gate Charge
.0 1.5 2.0
Qg - Total Gate Charge (nC)
r DS(on) — On-Resistance( Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC = -55oC
0 1 2 3 4
VGS - Gate-to-Source Voltage (V)
Capacitance
"sss. Coss
O 5 10 15 20
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
IDS = 1.9 A v,-'''''
w.,,,..''''''''
"r-'''"'"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number:
S-56944-Rev. D, 23-Nov-98
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Si6801DQ
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A TJ = 150°C a 0.3 l
it Eo'
8 tar' 0.2
I' I ID = 1.9 A "ss
E" "ms-..,...
o) S?, 0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.5 100
0.3 80 t
8 0.1 , ' 60
g "s, ID = 250 HA " \
j',' "s, g
gi' -0 1 8 40
if 'ss, \
> "s, N
-0 3 's. “x
"N 20 "N
"ss,, 'ss
-0.5 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
T: - Temperature (°C) Tlme (sec)
Duty Cycle = 0.5
Thermal Impedance
Normalized Effective Transient
Single Pulse
10-4 10-3 1tr2 IO-l
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 125°C/W
3. To, - TA = ProuZthoA(i)
4. Surface Mounted
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Document Number: 70187
S-56944-Rev. D, 23-Nov-98
VISHAY
Si6801DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics
VGS = 4.5, 4, 3.5 V
Q 2.5 V
0 2 4 6
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.32 /
i,; VGS = 3 v
(u 0.24
ii' o,-,.,,.,....---'''''''''" Ves = 4.5 v
6 0.16
'il:] 0.08
0 2 4 6
ID - Drain Current (A)
Gate Charge
VGs — Gate—to-Source Voltage (V)
Q9 - Total Gate Charge (nC)
FDS(on) - On-Resistance(
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc---55oC /
6 25°C H
0 1 2 3 4
VGS - Gate-to-Source Voltage (V)
Capacitance
100 Crss
0 5 10 15 20
V93 - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
2.0 I I I
VGS = 4.5 V
1.6 lros=1.7A w,.,,,,.-"'''"''''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
Document Number: 70187
S-56944-Rev. D, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si6801DQ
. . . . VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.4
T J = 150°C A
A a 0.3
8 I"-,',
5 i'.’ 0.2 'ss,
8 8 ID = 1 7 A "s-..
, I """----.
w E 0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.5 100
0.3 80
s. - "
g 0.1 - g 60
E ",,-''''' ID = 250 uA " l
> // t N
3:: -0 1 I [E 40
0 3 20 ,
-0.5 o
-50 -25 0 25 50 75 100 125 150 0001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E 8 0.2
t i?,, Notes:
(e,' g 0.1 f
o - F’DM
UJ g i
g 1. Duty Cycle, D = T;
g 2. Per Unit Base = RmJA =125°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 1O-3 Ity-it IO-l 1 IO 30
Square Wave Pulse Duration (sec)
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2-6 S-56944-Rev. D, 23-Nov-98
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