SI6552DQ ,N/P-Channel 20-V (D-S) PairS-03419—Rev. G, 03-Mar-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curre ..
SI6562DQ ,N/P-Channel 20-V (D-S) FaxBack 408-970-5600S-56944—Rev. B, 23-Nov-982-1Si6562DQVishay Siliconix
SI6552DQ
N/P-Channel 20-V (D-S) Pair
“5% Si6552DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.08@Vss=4.5V 21:2.8
N-Channel 20
O.11@VGS=2.5V 21:21
0.1 @VGS= -4.5V 21:2.5
P-Channel -12
0.18@VGs=-2.5V cel.9
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N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 20 -12
Gate-Source Voltage VGS ck 8
TA=25°C $2.8 12.5
Continuous Drain Current (TJ = 150°c)a ID
TA-- 70°C 21:2.3 i2.0
Pulsed Drain Current IDM d: 20
Continuous Source Current (Diode Conduction)" Is 1.0 -1.0
TA = 25°C 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 125 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70175 www.vishay.com
S-03419-Rev. G, 03-Mar-03 2-1
Si6552DQ f,,sWAir'
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 0.6
Gate Threshold Voltage VGS(th) V
VDS = V65, ID = -250 WA P-Ch -0.6
Gate-Body Leakage IGSS Vos = 0 V, VGS = i8 V i 100 nA
Vros = 20 V, VGS = 0 V N-Ch 1
VDs=-12V,VGs=0V P-Ch -l
Zero Gate Voltage Drain Current loss r1A
VDS=20 VVGS=0V,TJ=70°C N-Ch 5
VDs= -12V,VGs=0V,To=701 P-Ch -5
VDS = 5 V, VGS = 4.5 V N-Ch 10
Vos-- -5V,VGs= -4.5V P-Ch -10
On-State Drain Currenta loam) A
Vos = 5 V, VGS = 2.5 V N-Ch 4
Vos-- -5V,VGS= -2.5V P-Ch -4
VGS = 4.5 V, ID = 2.8 A N-Ch 0.08
VGS = -4.5 V, ID = 2.5 A P-Ch 0.1
Drain-Source On-State Resistance rDS(on) Q
VGS=2.5 v, |D=2.1 A N-Ch 0.11
VGs= -2.5V, ID=1.9A P-Ch 0.18
VDs=15V,ID=2.8A N-Ch 12
Forward Transconductancea gfs S
VDS = -9 V, ID = -2.5A P-Ch 7
ls=1.0A,VGs=0V N-Ch 1.2
Diode Forward 1/oltagea VSD V
Is=-1.0A,VGS=0V P-Ch -1.2
Dynamich
N-Ch 16 40
Total Gate Charge Qg
N-Channel P-Ch 9 20
l/Ds-- 10V, VGS=4.5V,ID=2.8A N-Ch 3
Gate-Source Charge Qgs nC
P-Channel P-Ch 2
Mas-- -6 V, VCs-- -4-5V,ID= -2.5A N-Ch 6
Gate-Drain Char e Q
g gd P-Ch 3
N-Ch 37 60
Turn-On Dela Time t
y d(on) P-Ch 21 40
N-Channel N-Ch 66 100
RiseTime tr VDD=10V,RL=10Q
ID _ 1A, VGEN = 4.5 V, Rs = 6 Q P-Ch 35 70
P-Channel N-Ch 56 100
Turn-Off Delay Tlme tti(oit) VDD = -6 V, RL = 6 Q ns
ID a -1 A, VGEN = -4.5 V, Rs = 6 Q P-Ch 43 80
N-Ch 57 100
Fall Time If
P-Ch 22 40
Source-Drain t N-Channel-V = 1.0 A, di/dt = 100 A/ws N-Ch 26 70
Reverse Recovery Time rr P-channel-IF = -1.0 A, di/dt = 100 A/gs P-Ch 35 70
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 70175
2-2 S-03419-Rev. G, 03-Mar-03
VISHAY
Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
| D - Drain Current(A)
rDs(on) — On—Resistance ( 9)
VGS = 2.5 V
0.05 VGS=4-5V -
O 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vos = 10 V /
ID = 2.8 A
It 4 /
il a /
s,'. 2 '
4 8 12 16 20
Output Characteristics
VGS = 8thru 3V
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
% - TotaIGate Charge(nC)
rDS(on) - On-Resistance(
| D - Drain Current(A)
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
20 l _
T = -55°C
C J) 125°C
16 's,
0 1 2 3 4
VGS - Gate-to-Source Voltage (V)
Capacitance
0 2 4 6 8 10 12
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
IDS = 2.8 A
1 2 ".----''"'''
0.8 r,,,,---''''''"'''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
Document Number: 70175
S-03419-Rev. G, 03-Mar-03
www.vishay.com
Si6552DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A Cl (
- 03 0.080
“a 5 \
g ' 0.070 "ss.
I L, 0.060 "s.--,
_ J) b 2.8 A
L 0.050
0.00 J25 0.50 0.75 1.00 1.25 1.50 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 25 I
8 _ g 15
.g 0 0 _ ID = 250 11A "L" )
il ""'s-s..s, g k
g "ss, CL 10
8 "s. N,
> -0.5 N
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T2
2. Per Unit Base = RthJA =125°CIW
3. TJM - TA = PDMZmJAm
4. Surface Mounted
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Document Number: 70175
S-03419-Rev. G, 03-Mar-03
VISHAY
Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Output Characteristics
20 1 ,
/ Vss=8,7,6, 5,4V
"ig" //
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.20
g 0.15
fr,' VGS = 2.5 V /
nag a,.,,,,-''"'
8 0.10 Vss=4.51/
b' 0.05
O 2 4 6 8 10
ID - Drain Current(A)
Gate Charge
VGS = 4.5 V
ID = 2.5 A
VGS — Gate—to-Source Voltage(V)
0 3 6 9 12 15
% - TotaIGate Charge(nC)
rDS(on) - On-Resistance(
| D - Drain Current (A)
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
TC= 125°C
VGS - Gate-to-Source Voltage(V)
Capacitance
0 2 4 6 8 10 12
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
Vss=4.5V
1.6 _- ID=2.5A
1.4 ,..---"'"'
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
Document Number: 70175
S-03419-Rev. G, 03-Mar-03
www.vishay.com
Si6552DQ
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
10 TJ=150°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V30 - Source-to-Drain Voltage (V)
Threshold Voltage
E ID = 250 11A w,,,,,.,--''''''''
8 w,,--''''''
5 w,,--'''''''
E 0.0 ---"
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
rDS(on) — On-Resistance( 9)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
ID = 2.5A
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.001 0.01 0.1 1 IO 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T2
2. Per Unit Base = RthJA =125°CIW
3. TJM - TA = PDMZmJAm
4. Surface Mounted
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Document Number: 70175
S-03419-Rev. G, 03-Mar-03
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