SI6466 ,20V N-Channel PowerTrench MOSFETApplications low R DS(ON)• Battery protection • Low profile TSSOP-8 package • DC/DC conversion • P ..
SI6466ADQ ,N-Channel 2.5-V (G-S) MOSFET FaxBack 408-970-5600S-00984—Rev. A, 15-May-002-1Si6466ADQNew ProductVishay Siliconix
SI6466
20V N-Channel PowerTrench MOSFET
Si6466DQ D G S S S S D D November 2001 Si6466DQ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is a rugged gate version of • 7.8 A, 20 V R = 15 mΩ @ V = 4.5 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 22 mΩ @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Extended V range (±12V) for battery applications GSS ratings (2.5V to 12V). • High performance trench technology for extremely Applications low R DS(ON) • Battery protection • Low profile TSSOP-8 package • DC/DC conversion • Power management • Load switch 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1) 7.8 A D – Pulsed 30 P Power Dissipation (Note 1a) 1.4 W D (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W θJA (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6466 Si6466DQ 13’’ 16mm 3000 units Si6466DQ Rev C(W) 2001
