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SI5853DC-T1
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
VISHAY
Si5853DC
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.110 @ VGS = -4_5 V -3.6
-20 0.160 © VGS = -2.5 V -3.0
0.240 @ VGS = -1.8 v -2.4
SCHO1TKY PRODUCT SUMMARY
Vishay Siliconix
. v, (v)
VKA (V) Diode Forward Voltage IF (A)
20 0.48 V © 0.5 A 1.0
1206-8 ChipFET"'
Marking Code
Lot Traceability
and Date Code
Part # Code
Bottom View P-Channel MOSFET
Ordering Information: Si5853DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage (MOSFET and Schottky) Vos -20
Reverse Voltage (Schottky) VKA 20 V
Gate-Source Voltage (MOSFET) vss ch 8 i8
TA = 25°C -3.6 -2.7
Continuous Drain Current (TJ = 150°C) (MOSFET)a ID
TA=85°C -2.6 -1.9
Pulsed Drain Current (MOSFET) 'DM -10 A
Continuous Source Current (MOSFET Diode Conduction)a Is -1.8 I -0.9
Average Foward Current (Schottky) IF 1.0
Pulsed Foward Current (Schottky) IFM 7
TA = 25°C 2.1 1.1
Maximum Power Dissipation (MOSFET)a
TA = 85°C 1.1 0.6
TA = 25°C 1.3 0.96
M . P Di . ti S h ttk a
aXImum ower ISSIpa ion ( c o y) TA = 85''C 0.68 0.59
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature? C 260
a. Surface Mounted on I" x1" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71239
S-21251-Rmt. B, 05-Aug-02
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Si5853DC
Vishay Siliconix
VISHAY
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 50 60
t s 5 sec
Schottky 77 95
Junction-to-Ambienta RNA
MOSFET 90 110
Steady State °C/W
Schottky 110 130
MOSFET 30 4O
Junction-to-Foot Steady State Rm”:
Schottky 33 40
a. Surface Mounted on I" x 1" FR4 Board.
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = bes, ID = -250 YA -0.45 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = is V 1100 nA
Vos=-16V,Ves--0V -1
Zero Gate Voltage Drain Current Koss “A
VDs---16V,VGs--0V,To--85'G -5
On-State Drain Currenta IBM) VDS s -5 V, VGS = -4.5 V -10 A
VGS = -45 V, ID = -2.7 A 0.095 0.110
Drain-Source On-State Resistancea rDS(an) Vas = -2.5 V, ID = -2.2 A 0.137 0.160 Q
VGS = -1.8 V, ko = -1 A 0.205 0.240
Forward Transconductanceal gfs Vos = -10 V, ID = -2.7 A 7 S
Diode Forward Voltagea VSD ls = -0.9 A, VGS = 0 V -0.8 -1.2
Dynamicb
Total Gate Charge Q9 4.4 6.5
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 M ID = -2.7 A 1.4 nC
Gate-Drain Charge di 0.65
Turn-On Delay Time tdmn) 16 25
Rise Time tr VDD = -10 V, RL = 10 Q 30 45
Turn-Off Delay Time tdm In E -1 A, VGEN = -4.5 V, Re = 6 Q so 45 ns
Fall Time tf 27 40
Source-Drain Reverse Recovery Time trr IF = -0.9 A, di/dt = 100 A/ps 20 40
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
SGHOTI'KY SPECIFICATIONS (Ta = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 0.5A 0.42 0.48
Forward Voltage Drop VF V
IF = 0.5 A, Tu = 125°C 0.33 0.4
v, = 20 V 0.002 0.100
Maximum Reverse Leakage Current lrm v, = 20 V, To = 85°C 0.10 1 mA
v,=20\/,TJ=125°C 1.5 10
Junction Capacitance CT V, = 10 V 31 pF
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Document Number: 71239
S-21251-Rev. B, 05-Aug-02
VISHAY
Si5853DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Output Characteristics
vss = 5 thru 3 V
8 2.5 V
iii:.: A'''''
CI ---"
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 1.8 V
p, 0.4
O 0.3 I
A V = 2.5 V
5, 0.2 -p'' GS ore
D m...,----" _
h ------"" Vas - 4.5 V
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
A I/os = 10 V
ty ID = 2.7 A
g, 4 A
0 1 2 3 4 5
Q9 - Total Gate Charge (nC)
rDS(on) - On-Resistance($2)
| D - Drain Current (A)
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
10 I I
TC = -55'C /
8 25°C \J//
6 / / 125°C -
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
ss.,. Coss
R''-..-,
O 4 8 12 16 2O
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
VGS = 4.5 V
ID = 2.7 A
1.4 ",ew'''
,,,,,,pw''''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature (°C)
Document Number: 71239
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5853DC
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.4
A ID = 2.7A
5:; E, 0.3
S o 1’
o T = 150 C 8
g 8; 0.2
_ (n 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.3 / 40
ID = 250 MA o,,,,,,''''''
E 0.2 1
'd ',,,,,,,p''''''' E 30
g , t I
“I 0.1 m
s. CL 20
> 0.0 ,
-0.1 h,
-0.2 0
-50 -25 O 25 50 75 100 125 150 10-4 10'3 10'2 Io-l 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ki Duty Cycle = 0.5
g g Notes:
E g -,,,C,
E a 0.1 'l"
2 f-' .
E t1 _
ty ‘L Wit
2 l. Duty Cycle, D = T;
2. Per Unit Base = Rth0A = 90°C/W
3. TJM - TA = PDMZthJA“)
4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71239
S-21251-Rev. B, 05-Aug-02
"Gai; Si5853DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
‘05) Duty Cycle = 0.5
g tr, 0.1
Single Pulse
10-4 10-3 Io-? lo-l 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTI'KY
Reverse Current vs. Junction Temperature Forward Voltage Drop
if 1 A
7f 'c-f.- TJ = 150%:
E 0.01 L?
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0
To - Junction Temperature (°C) VF - Forward Voltage Drop (V)
Capacitance
CL'" 120
1 'ss.
"'---.._,
cy- 30
0 4 8 12 16 20
VKA - Reverse Voltage (V
Document Number: 71239
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S-21251-Rmt. B, 05-Aug-02
Si5853DC
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
Thermal Impedance
‘11 "Zl
l. Duty Cycle, D = T
2, Per Unit Base = RNA = 110°C/W
Normalized Effective Transient
3. To, - TA = PoMZmoA(t)
. 4. Surface Mounted
Single Pulse
10-4 1o-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
Z 's. 0.02
Ie Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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2.5 S-21251-Rev. B, 05-Aug-02
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