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SI5513DC
Complementary 20-V (D-S) MOSFET
VISHAY
Si5513DC
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.075 @ VGS = 4.5 v 4.2 tts
N-Channel 20 0.134 @ Vss = 2.5 v 3.1 tpif,
0.155 v = -4.5v -2.9 Its' 9
P-Channel -20 @ GS ‘30 Cts't
0.260 @ VGS = -2.5 v -2.2 e ttro
't tt et
. D1 9 S2
1206-8 ChipFET"'
Marking Code
-- Lot Traceability
and Date Code
Part it Code S, De
Bottom Mew
N-Channel MOSFET
Ordering Information: Si5513DC-T1
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 5 secs Steady State 5 secs I Steady State Unit
Drain-Source Voltage VDS 20 -20
Gate-Source Voltage VGS ck 12
TA-- 25''C 4.2 3.1 -A9 -2.1
Continuous Drain Current (To = 150°c)a ID
a-- 85''C 3.0 2.2 -2.1 -1.5
Pulsed Drain Current IBM 10 -10
Continuous Source Current (Diode Conduction)a Is 1.8 0.9 -1.8 -0.9
TA=25''C 2.1 1.1 2.1 1.1
Maximum Power Dissipation" PD W
a-- 85''C 1.1 0.6 1.1 0.6
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150
Soldering Recommendations (Peak Temperature)', C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maximum Junction-to-Ambienta RthJA
Steady State 90 110 ''C/1/V
Maximum Junction-to-Foot (Drain) Steady State RthJF 30 4O
Surface Mounted on I" x I" FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder flllet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
DocumentNumber: 71186
S-31263-Rev. D, 16-Jun-03
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Si5513DC f,,sWAir'
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 0.6
Gate Threshold Voltage VGS(th) V
VDS = V65, ID = -250 WA P-Ch -0.6
N-Ch i 100
Gate-Bod Leaka e I VD = 0 V, V = d: 12 V nA
y g GSS s GS P-Ch i100
VDS = 16 V, VGS = 0 V N-Ch 1
Vos=-16V,VGs=0V P-Ch -l
Zero Gate Voltage Drain Current IDSS 11A
VDS=16V,VGS=0V,TJ=70°C N-Ch 5
VDs=-16V,VGs=0V,To=70''C P-Ch -5
Vros 2 5 V, VGs = 4.5 V N-Ch 10
On-State Drain Currenta 'D(on) A
VDS $ -5V,VGS= -4.5V P-Ch -10
VGS = 4.5 V, ID = 3.1 A N-Ch 0.065 0.075
VGS = -4.5 V, ID = -2A A P-Ch 0.130 0.155
Drain-Source On-State Resistancea roam) Q
Vss=2.5 V, ID=2.3A N-Ch 0.115 0.134
VCs = -2.5 V, ID = -1.7 A P-Ch 0.215 0.260
Vros=10V,lro=3.1A N-Ch 8
Forward Transconductancea gfs S
VDs=-10V,ID=-2.1A P-Ch 5
ls = 0.9 A, VGS = 0 V N-Ch 0.8 1.2
Diode Forward Voltagea VSD V
I5: -0.9 A,VGS=0V P-Ch -0.8 -1.2
Dynamicb
N-Ch 4 6
Total Gate Charge 09
N-Channel P-Ch 3 6
bbs-- 10V, VGs--4SV, ID=3.1 A N-Ch 0.6
Gate-Source Charge Qgs nC
P-Channel P-Ch 0.9
Vi-lov, VGs=-4.5V,ID=-2.1A N-Ch 1.3
Gate-Drain Char e Q
g gd P-Ch 0.6
N-Ch 12 18
Turn-On Dela Time t
y d(on) P-Ch 13 20
N-Channel
N-Ch 35 55
Rise Time tr VDD = 10 V, RL = 10 Q
ID a 1A, VGEN=4.5V, RG--6Q P-Ch 35 55
P-Channel N-Ch 19 30
Turn-Off Delay Tlme td(ott) VDD = -10 V, RL = 10 Q P-Ch 25 40
ID a -1A,VGEN= -4.5V, RG=69
N-Ch 9 15
Fall Time k
P-Ch 25 40
Source-Drain t IF = 0.9 A, di/dt = 100 Alps N-Ch 40 80 ns
Reverse Recovery Time rr IF = -0.9 A, di/dt = 100 Alps P-Ch 40 80
a. Pulsetest; pulse width 5 300 us, duty cycle s: 2%,
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71186
2-2 S-31263-Rev. D, 16-Jun-03
VISHAY
Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
NCHANNEL
Output Characteristics
10 _ _
/''''Css = 5 thru 3 v
SE // 2.5 v
E / l/
- 2 ,7
wtf, 1.5 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.25
ir," J
E 0.20
8 0.15 i VGs=2.5V /
IE" 0.10 _,...,,.--'''''
iii- - Vss = 4.5 v
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vos = 10 v
CT. ID = 3.1 A
tf 2 l
0 1 2 3 4
% - Total Gate Charge (nC)
C - Capacitance (pF)
rosmn) — On-Resistance(§2)
ID - Drain Current
(Normalized)
Transfer Characteristics
TC = (-5sso Cl /
25 Cid y
6 125°C -
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Capacitance
500 Ciss
"s".....,
100 tii:::.::.::,
0 4 8 12 16 20
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1.6 _ _
VGS = 4.5 V
ID: 3.1 A
1.4 //
1.2 ',,,,,,p''''''
1.0 w,,,,,,,,,,,,,-'''''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
DocumentNumber: 71186
S-31263-Rev. D, 16-Jun-03
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Si5513DC
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) NCHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Ci:] "if 0.15
E fi. ID = 3.1 A
8 0.: 0.10
a 6 'ss,
' E" "s--,..
- tn 0.05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
o 2 Ac 40
ID = 250 WA
Ff. "s,
g -0.0 g 30
E -0.2 "s, k'. 20
> '"stss,s, N
0.4 's, 10 N,
-0.6 0
-50 -25 0 25 50 75 100 125 150 10-4 10-3 10-2 10-1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 PDM
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = RmJA = 90°CNV
Thermal Impedance
Normalized Effective Transient
. 3. TJM - TA = PDMZmJA")
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com DocumentNumber: 71186
2-4 S-31263-Rev. D, 16-Jun-03
ic,fiF,Ai, Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) NCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
.5 Duty Cycle = 0.5
, a 0.2
iii E 0.1
8 t, 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS ttttV c UNLESS NOTED) PCHANNEL
Output Characteristics Transfer Characteristics
l 1 " Is.,; v /-' l 1 1 f
Vss=5thru4V o,,,/j(,( 'V'''''" Tc-- -55oc
8 // 8 25°C y
ttf 3V /
ii.:] 'r-'"" g A
E E 6 D -
g f g , 125 C
6' 2 5 v 6' /
C . C g
'tls" E 4 y
'0 2 v 23
- - 2 I
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) Vss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.4 600
a''' VGS = 2.5 v 500 \
g 0.3 [lg \_Ciss
E 8 400
g / 'g
' VGS = 3.6 V o.
8 0.2 / 8 300
' -.----"" _...-- I l
2C: o.......------''"'" 0 200
iii VGS = 4.5 V
lt Coss
0 2 4 6 8 10 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 71186 www.vishay.com
S-31263-Rev. D, 16-Jun-03 2-5
Si5513DC
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Gate Charge On-Resistance vs. Junction Temperature
5 l w 1.6 w _
VDS=10V Vss=4.5V ,,,w'''
E ID=2.1A A |D=2.1A
$3 4 g. 1.4 ww'''
9 f m /
> :5 a
8 .2 g
g 3 8 g 1.2 I
o? 5 E "
S,'. C) 2
2 at ' V
8 2 ,,,,/''''' "E" 1.0
> 1 of 0.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) T: - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.40
A I ID = 2.1 A
tC tf 0.30
'l 2 0.25
Q To = 150°C 8 \
g 5 0.20 N
cn I 0.15 "s,..
(.0 lic," "s-.,.-.
- is) 0.10
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.3 r 40
ID = 250 WA /
2, 0.2 1
E // E 30
m 0.1 o
E Cl. 20
> 0.0 N k
-o.1 ,/ N,,
w''''' n ' _
-0.2 O
-50 -25 0 25 50 75 100 125 150 10-4 10-3 10-2 10-1 1 10 100 600
TJ - Temperature CC) Time (sec)
www.vishay.com Document Number: 71186
2-6 S-31263-Rev. D, 16-Jun-03
“5% Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 PDM
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 90°C/\N
3. TJM _ TA = PusgthoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
it' Duty Cycle = 0.5
2% 0.2
it (E 0.1
"i' E, 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71186 www.vishay.com
S-31263-Rev. D, 16-Jun-03 2-7
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