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SI5504DC
Complementary 30-V (D-S) Rated MOSFET
“3% Si5504DC
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.085@VGS=10V i3.9 tts
N-Channel 30
0.143@Vss =4.5V iao tpif,
0.165@VGs=-10V i2.8 “
P-Channel -30 “o
0.290 @ Vss = -4.5 v i2.1 't tte
. D1 9 S2
1206-8 ChipFET
Marking Code
Lot Traceability
and Date Code
B tt v Part# Code SI De
o om 'ew N-Channel MOSFET P-Channel MOSFET
Ordering Information: Si5504DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 5 secs Steady State 5 secs I Steady State Unit
Drain-Source Voltage V93 30 -3O
Gate-Source Voltage VGS $20
TA = 25°C i3.9 i2.9 i2.8 $2.1
C ti DrainC tT=150°Ca I
on inuous ran Wen ( J ) TA = 85"C D $2.8 $2.1 $2.0 :i:1.5
Pulsed Drain Current 'DM 1 10
Continuous Source Current (Diode Conduction)" Is 1.8 0.9 -1.8 -0.9
TA=25°C 2.1 1.1 2.1 1.1
M ' P Di . ti a P
aXImum ower lsslpa Ion TA = 85°C D 1.1 0.6 1.1 0.6
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150
Soldering Recommendations (Peak Temperature)', C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 50 60
Maximum Junction-to-Ambienta R
Steady State WA 90 110 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder ftllet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S-21251-Rev. B, 05-Aug-02
www.vishay.com
Si5504DC 'Gai';
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 1.0
Gate Threshold Voltage VSS(th) V
VDS = V65, ID = -250 WA P-Ch -1.0
N-Ch i100
Gate-Body Leakage less Vos = 0 V, Veg = d: 20 V P Ch i100 nA
I/rss = 24 V, VGS = 0 V N-Ch 1
VDS = -24 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss o 11A
VDs=24N/,Vss=0V,TJ--85oC N-Ch 5
VDS = -24 V, VGS = 0 V, To = 85°C P-Ch -5
VDsz5\/,V(;s=10V N-Ch 10
On-State Drain Currenta ID(on) A
VDS s -5 V, VGS = -10 V P-Ch -1O
VGS = 10 v, ID = 2.9 A N-Ch 0.072 0.085
N/ss = -10 V, ID = -2.1 A P-Ch 0.137 0.165
Drain-Source On-State Resistance" roam) V 4 5 V I 2 2 A N Ch 0 120 O 143 C2
GS = . , D = . - . .
VGS = -4.5 V, ID = -1.6 A P-Ch 0.240 0.290
v.33: 15 V, ID=2.9A N-Ch 6
Forward Transconductancea ge, V 15 V I 2 1 A P Ch 3 s
DS = - , D = - . -
ls = 0.9 A, Vtss = o v N-Ch 0.8 1.2
Diode Forward Voltagea VSD I 0 9 A V 0 V P Ch 0 8 1 2 V
s = - . , GS = - - . - .
Dynamicb
N-Ch 5 7.5
Total Gate Charge 09
N-Channel P-Ch 5.5 6.6
VDS= 15V, Vss=10Vlro=2.9A N-Ch 0.8
Gate-Source Charge 095 P Ch I P Ch 1 2 nC
- anne - .
VDS=-15V, Vss=-10V,lD=-2.1 A N-Ch 1.0
Gate-Drain Charge di P Ch 0 9
N-Ch 7 11
Turn-On Delay Time tum) P Ch 8 12
N-Channel N-Ch 12 18
Rise Time tr VDD =15 V, RL =15 Q
Iro-1A,N/sEN=10VRG=6Q P-Ch 11 18
. P-Channel N-Ch 12 18
Turn-Off Delay Time td(off) VDD = -15 V, RL = 15 Q P-Ch 14 21 ns
ID _ -1A,VGEN= -10V, RG=69
N-Ch 7 11
Fall Tlme tf P Ch 8 12
Source-Drain t IF = 0.9 A, di/dt = 100 A/ws N-Ch 40 80
Reverse Recovery Time rr IF = -0.9 A, di/dt = 100 Alps P-Ch 40 80
a. Pulsetest; pulse width 5 300 us. duty cycle S 2%,
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71056
2-2 S-21251-Reu. B, 05-Aug-02
VISHAY
Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
”1 1 ff /
VGS=10thru5V p,,,,-'''''''''
E 6 I 4 v E
CT ’7 CT
o ,,e"' o
.E / E
a s:iii,i/'j')/" a
- 2 y 3 V -
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 /
Cl 0.15 /
z "w'''" g
g VGS ti:,...,,,,,,,----'''''''' 8
T,' 0.10 a,...-"'''' ~55
5 VGS = 10V 3
m 0.05
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
A _- VDS = 15 V j
i,' 8 ID = 2.9 A A
JI,'. 2"
i; e " fi, "ii'
F? .tL9 .5
CT tn -
<3 tf;' E
g 4 E o
l, 2 g
0 1 2 3 4 5
Q9 - TotaIGate Charge(nC)
N-CHANNEL
Transfer Characteristics
Tc = -1251 ,
2 L, //
'ss, , -55 "'C
0 Caiii) l
0 1 2 3 4 5
VGS - Gate-to-Source Voltage(V)
Capacitance
l Ciss
"ss.......,
1 00 Coss
0 6 12 18 24 30
VDS - Drain-to-Source Voltage(V)
1 8 On-Resistance vs. Junction Temperature
1.6 7 GS = 10 V //
1 .4 . ,/
1.2 ',,w'''"
-50 -25 0 25 50 75 100 125 150
T: - Junction Temperature (°C)
Document Number: 71056
S-21251-Rev. B, 05-Aug-02
www.vishay.com
Si5504DC
Vishay Siliconix
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.20
A a 0.15
tf., I
it' ii. ID - 2.9 A
8 i'-,,' 0 10
m n: 's
F?, 8 "ss,.
(I) I "'------.
_ tj'; 0.05
To = 25°C
1 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) Ves - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 I l 50
"s, ID = 250 WA _
0.2 Atc
's, 40
E -0.0
8 g 30
g 0.2 \ b'
f.?., o. 20
8 -0 4 \
-0.6 k IO N
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-4 10-3 10-2 IO-l 1 10 100 600
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
/'szs g 0.2 Notes:
se B ,
"if',' g 0.1 PEN
E E t _
E -1 1
y, _ l, Duty Cycle, D = T
g 2, Per Unit Base = RNA = 90°CNV
a 3. TJM - TA = PDMzthJAm
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71056
2.4 S-21251-Reu. B, 05-Aug-02
VISHAY
Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Efiective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Output Characteristics
Transfer Characteristics
1 1 ft" 6 V l l
VGS=10thru7V ot/t
T = -55°C /
8 I op''''' l 8 1C 1 l
/ 5L, 1 1 y
ig' / w,,,,-''''""''' g. 25°C ,
E 6 I E 6
g ',fw''''''' 'l-l , 125°C
o ((f/t,' o
(i, 4 / 4 v (i, 4
o 7fC o
- 2 V"'" - 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 O 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) I/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.4 400
VGS = 4.5 V 320 l,.
a 0.3 'sa...-, ISS
tl' D.
.fsi, -,.,,,,w'''' ' 240
.‘L’ m
ii " o.,-''''''''' 'ti "
I = o.
8 VGS 10 V 8 160
2% 0.1 0 \ Coss
L 80 Is,,.,,. ""---..
0 2 4 6 8 10 0 6 12 18 24 30
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Document Number: 71056 www.vishay.com
S-21251-Rev. B, 05-Aug-02 2-5
Si5504DC
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Gate Charge
On-Resistance vs. Junction Temperature
IO 1 1 " 1
VDs=15V s,p'''' VGS=1OV
I = 2.1 A I = 2.1 A
E 8 D A 1.4 D P
m pr Cl "
2 s,,/' z /
> 6 c A 1.2 I
D a) -
J?' o,,/'''' 9:72
9 4 C o 1.0
a) _/ V
u) 2 Cl 0.8
f,' ',,w''''"
0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistancevs. Gate-to-Source Voltage
A Cl 0.3 (
el:, T 150 c V
- = o o
E, J § ID = 2.1 A
it .22
a) (D 0.2
'g', 5 s,,
8 C) "s....
A 'm---.....
In Jil- 0.1
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 /'' 50
0.4 // 40
tD . 30
g 0 2 ID = 250 “A ',,,,p'''''" g "
ill, 'li
fg 0.0 o. 20
-0.2 I y,
" 10 N,
-0.4 0
-50 -25 O 25 50 75 100 125 150 10-4 10-3 10.2 IO-l 1 10 100 600
T J - Temperature CC) Time (sec)
www.vishay.com DocumentNumber: 71056
2-6 S-21251-Reu. B, 05-Aug-02
“3% Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Jo g 0.2 Notes:
a: 8 ,
.5 o. PDM
a: - k
E E 0.1 11
"r-T, F- 1. Duty Cycle, D = T,
E 2. Per Unit Base = RNA = 90°CNV
z 3. TJM - TA = ProMZthoA(t)
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = (h5
s F, 0.2
[t g OA
g 2 0.1
Single Pulse
10-4 1ty3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71056 www.vishay.com
S-21251-Rev. B, 05-Aug-02 2-7
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