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SI5463EDC
P-Channel 20-V (D-S) MOSFET
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VISHAY
Si5463EDC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vias (V) rDS(on) (Q) '0 (A)
0.062 @ vss = -4.5 V -5.1
0.068@ vss = -3.6 V -4.9
-20 0.085 @ vas = -2.5 v -4.4
0.120@VGS= -1.8 v -3.7
1206-8 ChipFET m
Bottom View
Ordering Information: Si5463EDC-T1
Marking Code
Lot Traceability
and Date Code
Part #
ESD Protected'
5000 v
5.4 k9
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -20
Gate-Source Voltage VGS cl: 12
TA=25°C -5.1 -3.8
Continuous Drain Current (T J = 150°C)a ID
TA = 85°C -3.7 -2.7 A
Pulsed Drain Current IDM -15
Continuous Source Currenta Is -1.9 -1.0
TA = 25°C 2.3 1.25
Maximum Power Dissipationa PD W
TA = 85°C 1.2 0.65
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature); d 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 45 55
Maximum Junction-to-Ambienta RthJA
Steady State 84 100 ''CNI
Maximum Junction-to-Foot (Drain) Steady State Rm": 20 25
a. Surface Mounted on 1" x I" FR4 Board.
b. When using HBM. The MM rating is 300 V
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71364
S-21251-Rev. C, 05-Aug-02
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Si5463EDC ii2WA,i',
Vishay Siliconix
SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V5301.) VDS = VGs, ID = -250 “A -0.45 V
Gate-Body Leakage Kass VDs = 0 V, VGs = $4.5 V ck 1.5
VDs=-16V,VGs=0V -l 11A
Zero Gate Voltage Drain Current IDSS
1/Ds---16V,VGs--0V,To--85c'C -5
On-State Drain Currenta low") VDS s -5 V, VGS = -4.5 V -15 A
Vas = -4.5 V, ID = -4.0 A 0.051 0.062
VGS = -3.6 v, ID = -3.5 A 0.056 0.068
Drain-Source On-State Resistance" rDS(on) Q
VGS = -2.5 V, ID = -3.0A 0.070 0.085
VGs=-1.8V,ID---1.5A 0.100 0.120
Forward Transconductancea gfs VDS = -5 V, ID = -4.0 A 10 S
Diode Forward Voltage" VSD Is = -1.0 A, VGS = 0 V -0.75 -1.2 V
Dynamics
Total Gate Charge q, 9.7 15
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 V, ID = -4.0 A 2.7 nC
Gate-Drain Charge di 1.4
Turn-On Delay Time Won) 1.85 2.5
Rise Time tr VDD = -10 V, BL =10 $2 3.2 4.5 ps
Turn-Off Delay Time td(oii) ID _ -l A, VGEN = -4.5 V, RG = 6 Q 1.9 2.5
Fall Time tf 3.2 4.5
a. Pulse test; pulse width S 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
15 I 15
2.5V l 1 /
r V h V ITC = -55°C /
= 4. - t ru 3
12 GS D 12 25°C I
it' 9 I 2 v it' 9 25°C -
E 6 I E 6
1:1 1:1
- 3 I1 .5 V - 3
1 V, 0.5 V
O 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) Vas - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71364
2-2 S-21251-Rev. C, 05-Aug-02
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VISHAY
Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
E 0.20
g VGS = 1.8 V
ii' 0.15
O ow'' V 2 5 V
' 0.10 " GS - .
3 -----" v - 3 6 v
GS - .
:8 w.....----" I
0.05 !
VGs--4.5V
o 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
- VDS= 10V
2, ID = 4.0 A /
o 5 IO 15 20 25
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
i TJ = 150°C
U, 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) - On-Resistance(g)
rDS(on) - On-Resistance(§2)
(Normalized)
Capacitance
'ss. Ciss
"ms....-,
\ Coss
"m--..-,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 4.0 A ",p''''
,,,,,,w''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 4.0A
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71364
S-21251-Rev. C, 05-Aug-02
www.vishay.c0m
Si5463EDC
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGSW) Variance (V)
'038 (HA)
Normalized Effective Transient
Thermal Impedance
Threshold Voltage
Single Pulse Power
ID = 250 11A
s,,,,,,,,-'''''''' g 30
0.1 I lg
'ps''''" t
-0.1 10 tt t
-o.2 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current
1000 10,000
TA = 25°C 100
600 Ct" 10
200 I 0.01
0 o.0001
o 2 4 6 8 10 12 0.10 1 10 20
VGS - Gate-to-Source Voltage (V) I/tss - Gate-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2
IO-l 1
Square Wave Pulse Duration (sec)
‘11 "Zl
I, Duty Cycle, D = T
2. Per Unit Base = RNA = 80°C/W
3, TJM - TA = PDMZthJAm
4. Surface Mounted
10 100 600
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Document Number: 71364
S-21251-Rev. C, 05-Aug-02
ii2%ii, Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
it' Duty Cycle = 0.5
'd g 0.1
o a: .
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
Document Number: 71364 www.vishay.com
S-21251-Rev. C, 05-Aug-02 2-5
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