SI5443DC ,P-Channel 2.5-V (G-S) MOSFETSi5443DCVishaySiliconixP-Channel 2.5-V (G-S)MOSFETPRODUCTSUMMARYV (V) r (Ω) I (A)DS DS(on) D0.065@V ..
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SI5443DC
P-Channel 2.5-V (G-S) MOSFET
"Gai; Si5443DC
Vishay Siliconix
P-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY tt')
VDS (V) rDS(on) (O) ID (A) “Q as
0.065 @ VGs = -4.5 v $4.9 0 2'ks't
20 0.074 v - 3.6V 4.6 't e rso' 6
- . © GS-- -. ck ' 'es'''' a‘g
o.110@sz= -2.5 v i3.8 N
1206-8 ChipFET'"
Marking Code
Lot Traceability
and Date Code
Part # Code
Bottom Mew
P-Channel MOSFET
Ordering Information: Si5443DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage I/os -20
Gate-Source Voltage VGS i 12
TA-- 25°C $4.9 $3.6
Continuous Drain Current (TJ = 160oC)a ID
TA=85°C $3.5 21:2.6 A
Pulsed Drain Current IBM 1 15
Continuous Source Currenta bus -2.1 -1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)', C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 80 95 och
Maximum Junction-to-Foot (Drain) Steady State Rm”: 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71064 www.vishay.com
S-21251-Rmt. C, 05-Aug-02 2-1
Si5443DC
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.6 V
Gate-Body Leakage Kass VDS = 0 V, Vas = ct: 12 V i 100 nA
bbs---ttfb(Vas--t?V -l
Zero Gate Voltage Drain Current IDSS 11A
VDs---16V,Vas--0V,To--85c'C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -15 A
vss = -4.5 v, ID = -3.6 A 0.056 0.065
Drain-Source On-State Resistancea rDS(on) VGs = -3.6 V, ID = -3.3A 0.065 0.074 Q
VGS = -2.5 V, ID = -2.7A 0.095 0.110
Forward Transconduc’tancea gfs VDs = -10 V, ID = -3.6 A 10
Diode Forward Voltagea VSD Is = -1 .1 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 9 14
Gate-Source Charge Qgs Vos = -10 V, VGS = -4.5 V, ID = -3.6 A 2.2 nC
Gate-Drain Charge di 2.2
Turn-On Delay Time 1d(on) 15 25
Rise Time t, VDD = -10 V, RL = 10 Q 30 45 us
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 50 75
Fall Time tf 35 50
Source-Drain Reverse Recovery Time trr IF = -1.1 A, di/dt = 100 Alps 30 60 ns
a. Pulse test; pulse width s 300 1.15, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
15 I '1
VGS=5thru 3.5V C,,,,"'-""'''"" 3V
if: '/' 2.5 V
o [r/ 2V
3 -''"" E
0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
15 l I
Tc = -55oC y
12 l l
25''C I
C 125°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vss - Gate-to-Source Voltage (V)
www.vis hay.com
Document Number: 71064
S-21251-Rev. C, 05-Aug-02
VISHAY
Si5443DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
E 0.16
E VGS = 2.5 V
'0 0.12
VGS = 3.6 V
I 0.08 _--''''"
f VGS = 4.5 v
o 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
Vos = 10 v /
E ID = 3.6 A
8, 4 /
0 2 4 6 8 10
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T J = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance (Q) C — Capacitance(pF)
(Normalized)
rDS(on) — On-Resistance(§2)
Capacitance
1200 N, ISS
300 It)::::: Coss
4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
|D=3.6A
I I v,,,,,,-'''''''
I/ss = 4.5V
w,,,,,,,,,,,,-'''''''''"
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.15 ID = 3.6 A
0.05 "_-...,,
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71064
S-21251-Rmt. C, 05-Aug-02
www.vishay.com
Si5443DC ",LiWg,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 50
0.4 ID = 250 pA /
§ w'''' E 30
'l 0.2 " , I
F. ,,,,,,ww''''' o. 20
0.0 's,
r,,,,,-''''" "s,
-0.2 0
-50 -25 O 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
.5 Duty Cycle = 0.5
"ii',' g Notes:
g a 0.1 Pros,
M (E 1
E tl _
a 1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 80°C/W
Sin le Pulse 3. Tn, - TA = PDMZWA“)
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
'ja', E 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71064
2.4 S-21251-Rev. C, 05-Aug-02
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