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SI5441DC
P-Channel 2.5-V (G-S) Rated MOSFET
VISHAY Si5441DC
Vishay Siliconix
P-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY tt')
VDS (V) rDS(on) (O) ID (A) 'tttlf,)'
0.055 @ sz = -4.5 v $5.3 eofJs'sw,
- _ - ,
20 0.06 © VGS - 3.6 v 15.1 't 'es'''' srtsis
0.083 @ vss = -2.5 v i4.3 N
1206-8 ChipFET“ S
Marking Code
-- Lot Traceability
and Date Code
Part # Code D
Bottom Wew
P-Channel MOSFET
Ordering Information: Si5441DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage I/os -20
Gate-Source Voltage VGS i 12
TA-- 25°C $5.3 $3.9
Continuous Drain Current (TJ = 160oC)a ID
TA=85°C $3.8 21:2.8 A
Pulsed Drain Current IBM 120
Continuous Source Currenta ls -2.1 -1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)', C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 80 95 och
Maximum Junction-to-Foot (Drain) Steady State Rm”: 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71055 www.vishay.com
S-21251-Rmt. B, 05-Aug-02 2-1
Si5441DC ",LiWg,
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.6 V
Gate-Body Leakage Kass VDS = 0 V, Vas = ct: 12 V i 100 nA
bbs---ttfb(Vas--t?V -l
Zero Gate Voltage Drain Current IDSS 11A
VDs---16V,Vas--0V,To--85c'C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -20 A
vss = -4.5 V, ID = -3.9 A 0.046 0.055
Drain-Source On-State Resistancea rDS(on) VGs = -35 V, ID = -3.7A 0.050 0.06 Q
VGS = -2.5 V, ID = -3.1 A 0.070 0.083
Forward Transconduc’tancea gfs VDs = -10 V, ID = -3.9 A 12
Diode Forward Voltagea VSD Is = -1 .1 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 11 22
Gate-Source Charge Qgs Vos = -10 V, VGS = -4.5 V, ID = -3.9 A 3.0 nC
Gate-Drain Charge di 2.5
Turn-On Delay Time 1d(on) 2O 30
Rise Time t, VDD = -10 V, RL = 10 Q 35 55
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 65 100 ns
Fall Time tf 45 70
Source-Drain Reverse Recovery Time trr IF = -1.1 A, di/dt = 100 Alps 30 60
a. Pulse test; pulse width s 300 1.15, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 / "e-''''''''''" 20 l
/ s,p'''''' VGS = 5 thru 3 v Tc|= -55'C J)
16 16 I
/ 25''C I
g.] / 2.5 v ia-f
"'t' 12 "'t' 12 I
ii o,-'''''''" ii
o /// 0 125°C
E 8 I E' 8
o pf ( o
I 2 V I
- 4 r - 4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) ves - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71055
2-2 S-21251-Rev. B, 05-Aug-02
VISHAY
Si5441DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a) 0.15
.3 VGS = 2.5 V
6 0.10
Ct?,'] ,/ Vas = 3.6 v
f 0.05
Vas = 4.5 V
o 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
Vos = 10 v
E ID = 3.9 A
Ci's,' //
0 3 6 9 12
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T J = 150°C
'ii":.]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance (Q) C — Capacitance(pF)
(Normalized)
rDS(on) — On-Resistance(§2)
Capacitance
_.-.--,
'Iss, Cass
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
I/ss = 4.5 V
|D=3.9A ',,,,,w'''
s,,,,,,,,,,,-''''''''''"
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
le: 3.9A
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71055
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5441DC
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6 50
0.4 ID = 250 pA of
§ ,,,? ig. 30
E 0.2 / a
F. tl. 20
a ,,,,w'"
/ "s..
-o.2 " 0
-50 -25 O 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Notes:
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = RthJA = 80°C/W
3. Tn, - TA = PDMZthuA(t)
4. Surface Mounted
10 100 600
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
I' "i.
S g 0.1
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
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Document Number: 71055
S-21251-Rev. B, 05-Aug-02
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