SI5435DC-T1 ,P-Channel 30-V (D-S) MOSFETS-21251—Rev.B,05-Aug-022-1Si5435DCVishaySiliconixSPECIFICATIONS(T =25_CUNLESSOTHERWISENOTED)JParame ..
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SI5435DC-T1
P-Channel 30-V (D-S) MOSFET
"Gai; Si5435DC
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY te
Vros (V) rDS(on) (O) In (A) “figs
ooso@v - 10V gl? Cts't
-30 . GS - - -5.6 tte “o
0.080 @ vss = -4.5 v -4.0 't et
1206-8 ChipFET"' S
Marking Code
-- Lot Traceability
and Date Code
Part # Code D
Bottom Ihew
P-Channel MOSFET
Ordering Information: Si5435DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -30
Gate-Source Voltage VGS :20
TA = 25°C -5.6 -4.1
Continuous Drain Current (T J = 150°C)8 ID
TA = 85°C -4.0 -2.9 A
Pulsed Drain Current IBM -30
Continuous Source Currenta Is -2.1 -1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)“ C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta Steady State RNA 80 95 ''G/W
Maximum Junction-to-Foot (Drain) Steady State Pimp 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71144 www.vishay.com
S-21251-Rmt. B, 05-Aug-02 2-1
Si5435DC
VISHAY
Vishay Siliconix
SPECIFICATIONS iTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = Vas, ID = -250 11A -1 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V i 100 nA
Vros=-24 MVcs--0V -1
Zero Gate Voltage Drain Current loss 11A
VDs---24V,VGs--0V,TJ--852C -5
On-State Drain Currenta low") VDS s -5 V, VGS = -10 V -30 A
N/ss = -10 v, ID = -4.1 A 0042 0.050
Drain-Source On-State Resistancea roam) Q
VGS = -4.5 V, ID = -3.1 A 0.070 0.080
Forward Transconductancea gfs Vos = -15 V, ID = -4.1 A 8 S
Diode Forward Voltage" VSD ls = -l .1 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Q9 16 24
Gate-Source Charge Qgs V03 = -15 V, VGS = -10 V, ID = -4.1 A 3.6 nC
Gate-Drain Charge di 3.1
Turn-On Delay Time td(on) 11 20
RiseTime tr VoD=-15V,Rc=15Q 5 10
Turn-Off Delay Time td(off) ID _ -l A, VGEN = -10 V, RG = 6 Q 40 80 ns
Fall Time If 20 40
Source-Drain Reverse Recovery Time trr IF = -1.1 A, di/dt = 100 A/ps 30 60
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
f/'" ppt''',.", l l
A / VGs=10thru6V TC: -55''C
24 I 24 I
/,t)(// --" 5V 25'C V
g:.] or-'"'" fi:.] J,
- l / - y
E 18 f f 5 18
's //j(/ij,V'''' . 1251
e 12 / e 12
'? I// w '?
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 O 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-ta-Source Voltage(V)
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Document Number: 71144
S-21251-Rev. B, 05-Aug-02
VISHAY
Si5435DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
ID 0.12
ii' Vas = 107
C 0.08
I a.---''''''"
E VGS = 4.5 V
f 0.04 -
o 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 15 V
E ID = 4.1 A
Ci's,' //
15 4 /
© o,//''"
0 4 8 12 16
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
A TJ = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance (Q) C — Capacitance(pF)
(Normalized)
rDS(on) — On-Resistance(§2)
Capacitance
1200 Ciss
'm--.-,
300 y _ Cass
"s--...
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
I/ss = 10 V w'''''
ID = 4.1 A
1.4 //
ld? ww''''''''''
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID: 4.1 A
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71144
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5435DC ",LiWg,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.8 50
O 6 /" 40
ID = 250 11A
E 0.4 l/
E w,,,,,,'''''''' ' 30
t, 0.2 1 t,
'l ',,,w'''" g I
F. tl. 20
> 0.0 \
o 2 IO _
-0.4 0
-50 -25 O 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
.5 Duty Cycle = 0.5
"ii',' g Notes:
g a 0.1 Pros,
M (E 1
E tl _
a 1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 80°C/W
Sin Ie Pulse 3. Tn, - TA = PDMZWA“)
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
'ja', E 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71144
2.4 S-21251-Rev. B, 05-Aug-02
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