SI5433DC-T1 ,P-Channel 20-V (D-S) MOSFETSi5433DCVishaySiliconixP-Channel 20-V (D-S)MOSFETPRODUCTSUMMARYV (V) r (Ω) I (A)DS DS(on) D0.040@V ..
SI5435DC ,P-Channel 30-V (D-S) MOSFETSi5435DCVishaySiliconixP-Channel 30-V (D-S)MOSFETPRODUCTSUMMARYV (V) r (Ω) I (A)DS DS(on) D0.050@V ..
SI5435DC-T1 ,P-Channel 30-V (D-S) MOSFETS-21251—Rev.B,05-Aug-022-1Si5435DCVishaySiliconixSPECIFICATIONS(T =25_CUNLESSOTHERWISENOTED)JParame ..
SI5435DC-T1 ,P-Channel 30-V (D-S) MOSFETSi5435DCVishaySiliconixP-Channel 30-V (D-S)MOSFETPRODUCTSUMMARYV (V) r (Ω) I (A)DS DS(on) D0.050@V ..
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SI5433DC-T1
P-Channel 20-V (D-S) MOSFET
"Gai; Si5433DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY stiif
VDS (V) r03(on) (O) '0 (A) ste,1,to)5iks,
0.040 @ V = -4.5 v -6.7 , t t8
GS 't 'est''' sNsiS
-20 0.052 © VGS = -2.5 v -5.9
0.072 @ vss = -1.8 v -5.0 l $s
1206-8 ChipFET'" S
Marking Code
BDIXX Lot Traceability
and Date Code
Part # Code D
Bottom Wew
P-Channel MOSFET
Ordering Information: Si5433DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos -20
Gate-Source Voltage VGS i8
TA = 25''C -6.7 -4.8
Continuous Drain Current (To = 150°C)5 ID
TA = 85°C -4.8 -3.5
Pulsed Drain Current 'DM -20
Continuous Source Currenta Is -2.1 -1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipation'' PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Soldering Recommendations (Peak Temperature)“ C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maxim m J nctitm-to-Ambienta R
I u u I I Steady State WA 80 95 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71233 www.vishay.com
S-21251-Rmt. B, 05-Aug-02 2-1
Si5433DC
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vros = V33, ID = -250 [1A -0.45 V
Gate-Body Leakage Kass VDS = 0 V, l/ss = i8 V i 100 nA
bbs---ttfb(Vas--t?V -l
Zero Gate Voltage Drain Current IDSS pA
VDs---16V,Vas--0V,To--85c'C -5
On-State Drain Current? low”) I/os s -5 V, VGS = -4.5 V -20 A
vss = -4.5 v, ID = -4.8 A 0.036 0.040
Drain-Source On-State Resistancea rDS(on) VGs = -2.5 V, ID = -4.2A 0.045 0.052 Q
Vas = -1.8 V, ID = -1 A 0.062 0.072
Forward Transconduc’tancea gfs Vros = -10 V, ko = -4.8 A 15
Diode Forward Voltagea VSD Is = -1 .1 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 15 22
Gate-Source Charge Qgs Vos = -10 V, VGS = -4.5 V, ID = -4.8 A 3.6 nC
Gate-Drain Charge di 2.5
Turn-On Delay Time 1d(on) 22 35
Rise Time t, VDD = -10 V, RL = 10 Q 29 45
Turn-Off Delay Time td(ott) ID E -1 A, VGEN = -4.5 M Re = 6 Q 94 140 ns
Fall Time tf 54 80
Source-Drain Reverse Recovery Time trr IF = -1.1 A, di/dt = 100 Alps 30 60
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 20 I
/ T = .-551
/ VGS = 5thru 2.5 V
16 16 25°C ""sslsl
g.] 2 V ia-f
5 12 I g 12 - 125°C -
o y" o
E 8 E' 8
o 1.5 V o
- 4 - 4
0 1 2 3 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
ves - Gate-to-Source Voltage (V)
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Document Number: 71233
S-21251-Rev. B, 05-Aug-02
VISHAY
Si5433DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
8 0.09 VGS = 1.8 V
dl VGS = 2.5 V
k 0.06 m....--''' I
A ----- I/tss = 4.5 V
f 0.03
O 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS=10V
ko--4.8A
a sw''
2 s,/'''
S — Gate-to—Source Voltage (V)
O 3 6 9 12 15
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
To =15ty'C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
rDS(on) - On-Resistance (Q) C — Capacitance(pF)
(Normalized)
rDS(on) — On-Resistance(§2)
Capacitance
2000 ISS
1000 t
500 li Coss
"ss. Crss
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
I/ss = 4.5 V
ID = 4.8 A
ld? o,,,,,,-''"'
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 4.8 A
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71233
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5433DC
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
0.4 50
0 3 f 40
ID = 250 pA
§ w''''" ig. 30
'ir,-, 0.1 / t,
F. a 20
-0.2 o
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
Single Pulse Power
10-2 10-1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Notes:
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = RthJA = 80°C/W
3. Tn, - TA = PDMZthuA(t)
4. Surface Mounted
10 100 600
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
I' "i.
S g 0.1
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
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Document Number: 71233
S-21251-Rev. B, 05-Aug-02
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