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SI5404DCVISHAYN/a21000avaiN-Channel 2.5-V (G-S) Rated MOSFET


SI5404DC ,N-Channel 2.5-V (G-S) Rated MOSFETSi5404DCVishaySiliconixN-Channel 2.5-V (G-S)MOSFETPRODUCTSUMMARYV (V) r (Ω) I (A)DS DS(on) D0.030@V ..
SI5404DC-T1 ,N-Channel 2.5-V (G-S) MOSFETS-31989—Rev. C, 13-Oct-03 1Si5404DCVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
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SI5404DC
N-Channel 2.5-V (G-S) Rated MOSFET
“3% Si5404DC
Vishay Siliconix
N-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY otf, tts
VDS (V) rDs(on) (O) ID (A) q et',' Cos' 6
. = . ' ,ete
20 22:22:68 2:: i: po t, wttb'
. GS = . i ' 4
1206-8 ChipFET"' D
Marking Code
-- Lot Traceability
and Date Code
Part # Code s
Bottom /eny
N-Channel MOSFET
Ordering Information: Si5404DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage Ves i 12
TA=25°C i7.2 i5.2
Continuous Drain Current (To = 150°C)8 ID
TA=85°C $5.2 $3.8
Pulsed Drain Current IDM i20
Continuous Source Current (Diode Conduction)a ls 2.1 1.1
TA = 25''C 2.5 1.3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
Soldering Recommendations (Peak Temperature? C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RthJA
Steady State 80 95 °C/W
Maximum Junction-to-Foot (Drain) Steady State Rm”: 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
C. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71057 www.vishay.com
S-21251-Rmt. B, 05-Aug-02 2-1
Si5404DC "Gai;
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 plA 0.6 V
Gate-Body Leakage less VDs = 0 V. Vas = + 12 V i 100 nA
VDs=16V,VGs=OV 1
Zero Gate Voltage Drain Current Koss “A
VDs--16V,VGs--0V,TJ--850C 5
On-State Drain Current? low”) VDS 2 5 V, ves = 4.5 V 20 A
VGS = 4.5 v, ID = 5.2A 0.025 0.030
Drain-Source On-State Resistancea rDs(on) Q
VGS = 2.5 V, ID = 4.3 A 0.038 0.045
Forward Transconductancea gfs Vos = 10 V, ID = 5.2 A 20 S
Diode Forward Voltagea VSD Is = 1.1 A, VGS = O V 0.8 1.2
Dynamicb
Total Gate Charge % 12 18
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.2 A 2.4 nC
Gate-Drain Charge di 3.2
Turn-On Delay Time td(0n) 20 30
Rise Time tr VDD = 10 V, RL = 10 Q 40 60
Turn-Off Delay Time 1mm ID 2 1 A, VGEN = 4.5 V, Re = 6 Q 40 60 ns
Fall Time tf 15 23
Source-Drain Reverse Recovery Time trr IF = 1.1 A, di/dt = 100 Alps 30 60
a. Pulsetest; pulse width 5 300 vs, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 I I 20
VGS = 5 thru 3 V
16 r 16
E 12 I E 12
E 8 E 8
I 2 V I To = 25°C /
- 4 - 4 I
25°C / o
1.5 V l "s; -55 C I
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71057
2-2 S-21251-Rev. B, 05-Aug-02
VISHAY
Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06 /
a 0.05 /
g VGS = 2.5 V
E 0.04
6 0.03 VGS = 4.5 V -
Ct?,'] 0.02
O 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
Vos = 10 v
E 5 ID = 5.2 A
8, - f
J', 4 o,,/''
tii,'' "
0 3 6 9 12 15
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°C
ls — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) - On-Resistance (Q)
rDS(on) — On-Resistance(§2)
(Normalized)
Capacitance
1500 Ciss
\)ys Coss
's-a.....,
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
I/ss = 4.5 V
ID = 5.2 A
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.06 "
\ ID = 5.2 A
0.03 "s..,.
"'"s..-.,.
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71057
S-21251-Rmt. B, 05-Aug-02
www.vishay.com
Si5404DC "Gai;
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
VGS(th) Variance (V)
Thermal Impedance
Threshold Voltage Single Pulse Power
0.4 50
0.2 "s. 40
"s, ID = 250 pA
Power (W)
'ss, "ss,
-0.6 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 Pros,
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = RthJA = 80°C/W
3. Tn, - TA = PDMZthuA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
I' "i.
3 g 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71057
S-21251-Rev. B, 05-Aug-02
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