SI5404DC-T1 ,N-Channel 2.5-V (G-S) MOSFETS-31989—Rev. C, 13-Oct-03 1Si5404DCVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
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SI5404DC-T1
N-Channel 2.5-V (G-S) MOSFET
VISHAY Si5404DC
Vishay Siliconix
N-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY Gmgée
VDs(V) rnsm (Q) MA) ttl?, oofi Mos is
20 0.030 @ VGS = 4.5 v 7.2 ?ovle BSN''
0.045 © I/es = 2.5 V 5.9 2..tr'
1206-8 ChipFETo D
Marking Code
-- Lot Traceability
and Date Code
Part # Code
Bottom Wery
N-Channel MOSFET
Ordering Information: Si5404DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage l/ss l 12
TA = 25°C 7.2 5.2
Continuous Drain Current (To = 150oC)a ID
TA = 85"C 5.2 3.8
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)a Is 2.1 1.1
TA = 25°C 2.5 1 .3
Maximum Power Dissipationa PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
Soldering Recommendations (Peak Temperature? C 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 50
Maximum Junction-to-Ambienta RNA
Steady State 80 95 °C/W
Maximum Junction-to-Foot (Drain) Steady State Rm}: 15 20
a. Surface Mounted on I" x I" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercom
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadiess components.
Document Number: 71057 www.vishay.com
S-31989-F%v. C, 13-Oct-03 1
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSM VDS = bes, ID = 250 MA 0.6 V
Gate-Body Leakage less VDS = 0 V, Vas = l 12 V d: 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
1/Ds--20VVGs--0V,Tv--850C 5
On-State Drain Currenta |D(on) I/os 2 5 V, VGS = 4.5 V 20 A
VGS = 4.5 v, ID = 5.2A 0.025 0.030
Drain-Source On-State Resistances rDS(on) Q
VGS = 2.5 V, ID = 4.3 A 0.038 0.045
Forward Transconductancea gfs Vos = 10 V, ID = 5.2 A 20 S
Diode Forward Voltagea VSD Is = 1.1 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 12 18
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.2 A 2.4 nC
Gate-Drain Charge di 3.2
Turn-On Delay Time INC") 20 30
Rise Time tr VDD = 10 V, RL = 10 Q 40 60
Turn-Off Delay Time td(off) ID _ 1 A, VGEN = 4.5 V, RG = 6 Q 40 60 ns
Fall Time tf 15 23
Source-Drain Reverse Recovery Time trr IF = 1.1 A, di/dt = 100 Alps 30 60
a. Pulse test; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 _ _ 20
Vas = 5 thru 3 V
16 , 'rr'"-" 16
2?, tac:',
E 12 I r E 12
E 8 E 8
o a /)
l 2 V ' Tc = 12500/
_ 4 - 4 y
25°C / O
1.5 v \ -55 C
0 o 1 l
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71057
2 S-31989-Rev. C, 13-Oct-03
"ii=iir
VISHAY
Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06 /
"iii" 0.05 /''"
g VGS = 2.5 V
f,-',. 0 04
6 0.03 VGS = 4.5 V 7
Cfs] 0.02
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS = 10 v
- ID = 5.2 A
4 ,,,,/'''"
VGS - Gate-to-Source Voltage (V)
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu =150°c
| S - Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C - Capacitance(pF)
roam) - On-Resistance(9)
rDS(0n) - On-Resistance(§2)
(Normalized)
Capacitance
Vs,,,, Goss
'ss.....,
4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
vss = 4.5 V
ID = 5.2 A
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
's-ss,,,,,...,..,.
VGS - Gate-to-Source Voltage (V)
Document Number: 71057
S-31989-F%v. C, 13-Oct-03
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "s, 40
"s, ID = 250 WA
g -o.o it 30
y "s, g I
'es-g'..] -0.2 hc Do. 20
'ss 'ss,
-O.6 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 IO-l 1 10 100 600
To - Temperature (''C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
i5 E f
g E 0.1 PDM
LY f-' l
E t, v-
a 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 80°C/W
Sin le Pulse 3. Torg _ TA = PDMZWA“)
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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