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SI4980DY-T1
Dual N-Channel 80-V (D-S) MOSFET
ic,fiF,Ai, Si4980DY
Vishay Siliconix
Dual N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.075@VGS=10V 3.7 fl Q
80 tte bos
0.095 @ VGS = 6.0 V 3.2 et
Top IAew
Orderinglnformation: Si4980DY
Si4980DY-T1 (with Tape and Reel) s
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V08 80
Gate-Source Voltage VGs $20
TA = 25°C 3.7
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C 2.9
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" ls 1.7
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range Ts Tsig -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 62.5 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70646 www.vishay.com
S-03950-Rev. D, 26-May-03 2-1
Si4980DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 WA 2 V
Gate-Body Leakage less VDs = 0 V, VGS = cl: 20 V l 100 nA
VDs=80V,N/ss=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=80V.VGS=OV,TJ=55°C 20
On-State Drain Currena |D(on) VDS = 5 V, N/ss = 10 V 20 A
VGS = 10 v, ID = 3.7 A 0.062 0.075
Drain-Source On-State Resistancea rDS(on) VGs = 6.0 V, ID = 3.2 A 0.071 0.095 Q
Forward Transconductancea gfs VDs = 15 V, ID = 3.7 A 12 S
Diode Forward Voltagea V50 ls = 107 A, VGS = 0 V 1.2
Dynamicb
Total Gate Charge % 15 30
Gate-Source Charge Qgs Vros = 40 V, VGs = 10 V, ID = 3.7 A 4 n0
Gate-Drain Charge di 3.2
Gate Resistance R9 1 5.1 Q
Turn-On Delay Time tam) IO 20
Rise Time tr VDD = 40 V, RL = 40 Q 10 20
Turn-Off Delay Time tdmm In E 1 A, VGEN = 10 V, Rs = 6 Q 30 60 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Tlme trr IF = 1.7 A, di/dt = 100 Alps 75 110
a. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
b. For design aid only,' not subject to production testing.
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Document Number: 70646
S-03950-Rev. D, 26-May-03
VISHAY
Si4980DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
w..----""""
24 'f,,,,,,-'"'"
VGS = 10 thru 6V
Ci.:] Ci"
E 18 E
C 5 V E
E 12 E'
0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.16
8 j G"
g o 12 o
.3 VGS = 6 V .52.
O. 0 08 --" o
sc.?, V = 0
cn GS 10 V
f? 0.04
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
Vros = 40 V
g 8 _- ID = 3.7 A A
ll?, 'ii,"
> 6 C a
E j) a
J tn =
O ID (U
(l) tyt E
g, 4 l e 25
g l C) v
O / 5,
U) 2 8
0 3 6 9 12 15
Q9 - TotalGate Charge(nC)
Transfer Characteristics
Tc = 125''C
6 25°C ss)f
l -55°C
0 1 2 3 4 5 6 7
VGs - Gate-to-Source Voltage (V)
Capacitance
900 Ciss
300 N,,,, Coss
k Crss "s-........,
0 10 20 30 40 50 60
Vos - Drain-to-Source Voltage (V)
2 0 On-Resistance vs. Junction Temperature
VGS = 10 v s,,,,,,,-''''''
1.6 7 |D=3.7A //
w,,,,,,-''''''
0.8 ",-"'"
o,,,.''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70646
S-03950-Rev. D, 26-May-03
www.vishay.com
Si4980DY f,,sWAir'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A 10 a 0.15
E) E ID = 3.7 A
g ll;' 0.10
(/8; T J = 150°C 6
I ' "s.-,
w ssir
_ m 0.05
T J = 25°C
1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 50
S "s, (
8 "s, ID = 250 [1A g 30
E 0 0 \
rf-e.. E 20
8 "s, \
> -0.5 "s,, 's.
"s, 's,
"ss,, "ss.
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = RmJA = 62.5“CNV
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 IO 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70646
2.4 S-03950-Rev. D, 26-May-03
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