SI4967DY ,Dual P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-59633—Rev. B, 12-Oct-982-1Si4967DYVishay Siliconix
SI4967DY
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si4967DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.023 @ VGS = -A.5 v d: 7.5
-12 0.030 @ VGS = -2.5 v i6]
0.045@VGs=-1.8N/ i5.4
Top View
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -12
Gate-Source Voltage VGS i 8
TA = 25°C l 7.5
Continuous Drain Current (TJ = 150oC)a, b ID
TA = 70°C d: 6.1 A
Pulsed Drain Current IDM i 30
Continuous Source Current (Diode Conduction)' b Is -1.7
TA = 25°C 2.0
Maximum Power Dissipation' b PD W
TA = 70''C 1.3
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 62.5
Maximum Junction-to-Ambienta thJA °C/W
Steady State 93
a. Surface Mounted on FR4 Board,
b. t s 10 sec.
DocumentNumber: 70813
S-59633-Reu B, 12-Oct-98
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Si4967DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm Vos = VGs, ID = -250 p.A -0.45 V
Gate-Body Leakage lsss 1/ros = O V, VGs = i 8 V i 100 nA
Zero Gate Voltage Drain Current IDSS VDS = -9.6 V, VGS = 0 V -1 pA
Vros---9.6 V,VGS= 0V, TJ=70°C -5
On-State Drain Currenta ID(on) VDS 2_' -5 V, VGS = -4.5 V -20 A
VGs=-4-5 V, ID = -7.5A 0.019 0.023
Drain-Source On-State Resistance" rDS(0n) VGS = -2.5 V, ID = -67 A 0.024 0.030 Q
VGS = -1.8 V, ID = -5.4 A 0033 0.045
Forward Transconductancea gfs VDS = -10 V, ID = -h5 A 27 S
Diode Forward Voltagea VSD ls = -1.7 A, VGS = 0 V 0.7 -1.2
Dynamicb
Total Gate Charge Q9 35 55
Gate-Source Charge Qgs VDs = A, V, VGS = -10 V, ID = -T5 A 7 n0
Gate-Drain Charge ' 7
Turn-On Delay Time td(on) 25 50
Rise Tlme tr Voro = -6 V, RL = 10 Q 40 80
Turn-Ott Delay Time tam '0 E -1 A, VGEN = -1 0 V, Rs = 6 Q 210 350 ns
Fall Time k 95 150
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 50 80
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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DocumentNumber: 70813
S-59633-Reu B, 12-Oct-98
VISHAY
Si4967DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
30 I I I
VGS = 51hru 2.5V
iii:? 'fc,,,,," 'ii:)'
I 1.5 V I
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
E 0.08
2 0.06 8
c v = 1 8 v g
('3 0.04 GS . (I)
"is,' o
u 0.02
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 6 v
i-',? 4 - ID = 7.5 A A
g 3 5 g
s) 6 3
(I,-',. 2 " I V
0 _/ g
I yr a
O 8 16 24 32 40
Q9 - Total Gate Charge(nC)
Transfer Characteristics
T = 125°C
25°C V
0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
0 3 6 9 12
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V w,,,,,.'''''''
ID = 7.5 A ',,,,w'''''
1.2 ",,,i''''
w,,,,,,-''''''
w,,,,,,,.''''''
,,,,pi''"
-50 -25 O 25 50 75 100 125 150
Tu - Junction Temperature (°C)
DocumentNumber: 70813
S-59633-Reu B, 12-Oct-98
www.vishay.com . FaxBack 408-970-5600
Si4967DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
o A 0.08
A T J = 150 C Cl
s "ii',"
E E 0.06
g O 0 04
(n I N,
w "ii' ID = 7.5 A
- 33 0.02
T J = 25°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) N/ss - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l l 30
02 ID = 250 wk / 25
E 0.2 1/ 20
g w" g '
E 0 1 / t, 15
> - " t
g.' a "t
> 0.0 l
-0 1 vp'''' 5 _
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
o 8 0-2 _
.2 g, Notes:
8 E 0.1 1
t, tD PDM
RD g 0.1 1
a l' t
= _ 1 _
E _L_ t2 t
8 1. Duty Cycle, D = T;
a 2. Per Unit Base = RmJA = 93°CNV
3. Tou - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 1O-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
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