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SI4967DY-T1
Dual P-Channel 1.8-V (G-S) MOSFET
VISHAY Si4967DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY otfJ'd
VDs(V) rosm (Q) MA) ttet,', (Fst 6
0.023 © VGS = -4.5 v -7.5 't 9069‘ 3‘9
- 12 0.030 @ VGS = -2.5 v -6.7 b'
0-045@VGS: -1.8V -5.4 l."
G.o_| G.o_|
Top Wery
D1 D1 D2 D2
Ordering Information: Si4967DY
Si4967DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos - 12
Gate-Source Voltage VGS i8
TA = 25°C -7.5
Continuous Drain Current (T J = 150°C)a' b ID
TA = 70°C -6.1 A
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction)' b Is -1.7
TA = 25''C 2.0
Maximum Power Dissipation' b PD W
TA = 70''C 1.3
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 62.5
Maximum Junc’tion-to-Ambienta R "C/W
Steady State thJA 93
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 70813 www.vishay.com
S-31989-F%v. C, 13-Oct-03 1
Si4967DY
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDs = VGS, ID = -250 WA -0.45 V
Gate-Body Leakage less VDs = 0 V. VGs = i8 V i 100 nA
Vros---12V,Vss--0V -1
Zero Gate Voltage Drain Current loss liA
Vros---12V,VGs--0V,TJ--701 -5
On-State Drain Currenta IBM) Vos 2 -5 V, Ves = -4.5 V -20 A
VGS = -4.5 v, ID = -7.5 A 0.019 0.023
Drain-Source On-State Resistancea roam) vss = -2.5 M b = -6.7 A 0,024 0.030 Q
VGS = -1.8 V, ID = -5.4 A 0.033 0.045
Forward Transconductancea gfs VDS = -10 V, ID = -7.5 A 27 S
Diode Forward Voltagea I/sro ls = -1.7 A, VGS = 0 V 0.7 -1.2
Dynamicb
Total Gate Charge Q9 35 55
Gate-Source Charge Qgs VDS = -6 V, VGS = -10 V, ID = -7.5 A 7 n0
Gate-Drain Charge di 7
Turn-On Delay Time tum) 25 50
Rise Time tr VDD = -6 V, RL = 10 Q 40 80
Turn-Off Delay Time td(ott) ID _ -1 A, VGEN = -10 V, RG = 6 Q 210 350 ns
Fall Time t, 95 150
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 50 80
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70813
S-31989-Rev. C, 13-Oct-03
VISHAY
Si4967DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D - Drain Current (A)
rDS(0n) - On-Resistance ( Q)
Gate-to-Source Voltage (V)
Output Characteristics
30 1 1 1
VGS = 5thru 2.5V
18 l/I//
f 1.5 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
Vros = 6 V
4 7 ID = 7.5 A A
O 8 16 24 32 40
Q9 - TotalGate Charge(nC)
rDS(on) - On-Resistance(9)
| D - Drain Current (A)
C - Capacitance(pF)
(Normalized)
Transfer Characteristics
T = 125°C
25°C ssis,,ti),j
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
0 3 6 9 12
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
'11 w,,,,,-''''''
VGS = 4.5 V
10 = 7.5 A
1.2 ,/
',,,,w'''''
w,,,,,.''''''
w,,,,,.'''''''
s,,,,,,,,,,,,,-'''''''''''"
~50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature CC)
DocumentNumber: 70813
S-31989-F%v. C, 13-Oct-03
www.vishay.com
Si4967DY
Vishay Siliconix
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.10
Tu = 150°C b-i" 0.08
s. 10 I
g E 0.06
'sb' 5
8 O 0.04
w I N,
tD "iii' ID = 7.5 A
:8 0.02
Tu = 25°C
1 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) Vas - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 I l 30
0.3 ID = 250 WA / 25
E 0.2 1/ 20
w w''''" g 1
E 0.1 / a 15 I
'l " E \
> 0.0 N
-0.1 ,/ 5 t
,,,,w''''' 'ss,.,
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
-l-t-1tt, h
1. Duty Cycle, D =
Normalized Effective Transient
Thermal Impedance
2. Per Unit Base = RthJA = 93°C/W
3. TJM - TA = PDMzthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
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4 S-31989-Rev. C, 13-Oct-03
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