IC Phoenix
 
Home ›  SS26 > SI4966DY,20-V (D-S) Dual
SI4966DY Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
SI4966DYVISHAYN/a846avai20-V (D-S) Dual


SI4966DY ,20-V (D-S) DualSi4966DYVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFET 

SI4966DY
20-V (D-S) Dual
VISHAY
Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
20 0.025 @ VGS = 4.5 V i7.1
0.035 @ VGS = 2.5 v i6.0
Top View
N-Channel MOSFET
"i,set
'sextsis
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V08 20
Gate-Source Voltage VGS + 12
TA = 25°C 2t 7.1
Continuous Drain Current (To = 150°C)a ID
TA = 70°C i 5.7
Pulsed Drain Current (10 us Pulse VWdth) IDM i40
Continuous Source Current (Diode Conduction)" Is 1.7
TA = 25''C 2
Maximum Power Dissipation" Po W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthSA 62.5 "CAN
a. Surface Mounted on FR4 Board! s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70718
S-54939-Rev. A, 29-Sep-97
www.vishay.c0m . FaxBack 408-970-5600
Si4966DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ck 12 V d: 100 nA
VDS=20V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS pA
VDs=20V,Vss=0V,Tu=551 5
On-State Drain Currenta low”) Vos 2 5 V, VGS = 4.5 V 20 A
VGS = 4.5 v, ID = 7.1 A 0019 0.025
Drain-Source On-State Resistancea rpswn) C2
Was = 2.5 V, ID = 6.0 A 0.025 0.035
Forward Transconductancea gfs Vos = 10 V, b = 7.1 A 27 S
Diode Forward Voltagea VSD ls = 1.7 A, VGS = O V 1.2 V
Dynamic"
Total Gate Charge Q9 25 50
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 6.5 I
Gate-Drain Charge di 4
Turn-On Delay Time td(on) 4O 60
Rise Tlme tr VDD =10 V, RL =10 Q 40 60
Turn-Off Delay Time tis(otr) ID _ 1 A, VGEN = 4.5 V, RG = 6 Q 90 150 ns
Fall Time tf 4O 60
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 4O 80
a. Pulsetest; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70718
S-54939-Rev. A, 29-Sep-97
Si4966DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 l l 40
VGS = 5 thru 3 V J,
2.5 V l
30 r - 30 1,
tt 'ici;']
t 20 / t 20
5 2 V 5
I I Tc = 125°C
D 10 I D 10 i
25''C /
1, 1.5 v "x
l -55t
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0
V05 - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 4000
A 0.08 3200 k
Ct A Nsss,. Ciss
d) cu. ''--.-_,
8 "ii;
m 0.06 o 2400
é fir '
o 0.04 o 1600
L VGS = 2.5 V I
5% _....K o " Coss
f? 0.02 800
VGS = 4.5 V
l Crss
0 10 20 30 40 0 4 8 12 16 20
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
5 Gate Charge 1 6 On-Resistance vs. Junction Temperature
I . l l
VD3=10V VGs=4.5V
ID=7.1A lro=7.1A
(i? 4 / A 1.4
m t,,,/'" a s,,,,,-'''''
f?, 3 I g A 1 2 l/
(D (U TV .
o a tD /
'r, a A "
w? _/ if1,lk'
s,'. 2 ( 6 fl 1.0
o / g "-"''
I (7’;
(D 1 CI 0.8
0 5 10 15 20 25 -50 -25 O 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70718 www.vishay.com . FaxBack 408-970-5600
S-54939-Rev. A, 29-Sep-97 2-3
Si4966DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
'r, la'
w ij-)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage(V)
Threshold Voltage
0.2 's
V I =250
8 Ah0 D WA
g "ss, b'
g." -0.2 k [E
8 'ss,
-0.4 'ss,,
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
|D=7.1 A
1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.10 1.00 10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 1o-1
*1: ,7
1. Duty Cycle, D =
2. Per Unit Base = RWA = 62.5°C/w
3. To, - TA = PDMZthJAm
4. Surface Mounted
www.vishay.com . FaxBack 408-970-5600
Document Number: 70718
S-54939-Rev. A, 29-Sep-97
:
www.loq.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED