SI4948EY ,50-V (D-S) Dual FaxBack 408-970-5600S-99444—Rev. E, 29-Nov-992-1Si4948EYVishay Siliconix
SI4948EY
50-V (D-S) Dual
VISHAY
Si4948EY
Vishay Siliconix
Dual P-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.120@VGs=-10V $3.1
0.150@VGs=-A.5V $2.8
Top View
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V05 -60
Gate-Source Voltage VGS l 20
TA = 25°C :l: 3.1
Continuous Drain Current (TJ = 175°C)3 ID
TA = 70°C l 2.6
Pulsed Drain Current IDM i 30
Continuous Source Current (Diode Conduction)" ls -2.0
TA = 25°C 2.4
Maximum Power Dissipation" PD W
TA = 70°C 1.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 “C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 62.5 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70166
S-99444-Rev. E, 29-Nov-99
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Si4948EY
VISHAY
Vishay Siliconix
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 MA -1 V
Gate-Body Leakage less Vos = 0 V, VGS = 120 V i 100 nA
Zero Gate Voltage Drain Current loss VDS = -60 V, VGS = 0 V -2 “A
1hos=-60 V,VGS= OV, Tu = 55°C -25
On-State Drain Currentb ID(on) V93 S -5 V, VGS = -1 0 V -20 A
Drain-Source On-State Resistanceb rDs(on) VGS = -10 V, ID = -3.1 A 0.100 0.120 Q
VGs=-4.5 V, lro=-2.8A 0.125 0.150
Forward Transconductanceb 9ts Vos = -15 V, ID = -3.1 A 7.5 S
Diode Forward Voltageb VsD Is = -2.0 A, VGS = 0 V Ah8 -1.2
Dynamica
Total Gate Charge Q9 16 25
Gate-Source Charge Qgs Vros = -30 V, VGS = -1 0 V, ID = -3A A 4 n0
Gate-Drain Charge di 1.6
Turn-On Delay Time td(on) 8 15
Rise Tlme tr VDD = -30 V, RL = 30 Q 10 20
Turn-Off Delay Time td(ott) '0 E -1 A, VGEN = -10 V, RG = 6 Q 35 50 ns
Fall Time tf 12 25
Source-Drain Reverse Recovery Time trr IF = -2.0 A, di/dt = 100 Alps 60 90
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 us. duty cycle s 2%.
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Document Number: 70166
S-99444-Rev. E, 29-Nov-99
VISHAY
Si4948EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
l l l -
VGs=10thru6V wc,,.,.--
24 [I/
A w,,,,,,,,,-'" 5 v A
E 18 / E
5 /" 5
Es 12 E
o 4 V o
o --" o
- 6 I/ -
0 1 2 3 4 5 6
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
g 0.6 g
.3 /2.
6 0.4 8
E V - 4 5 V 0
8 0.2 GS-". Vss=10V-
_..-.-.
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
Vos = 30 v
ID = 3.1 A
a / Ct
s'.?, s// 7;
5 6 /" _-l-l E
3 U) i
<3 / d,] g
Srl 4 6 fl
2 -,/" v
0 4 8 12 16 20
Q9 - Total Gate Charge (nC)
Transfer Characteristics
TC = -551
16 ”V/
12 150°C -
0 1 2 3 4 5 6
Ves - Gate-to-Source Voltage (V)
Capacitance
0 IO 20 30 40 50 60
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
Ves=1OV
ID=3.1 A ',,,,,w''''
s,,,,,,,,,,,-'''''''"
-50 -25 0 25 5O 75 100 125 150 175
TJ - Junction Temperature (°C)
Document Number: 70166
S-99444-Rev. E, 29-Nov-99
www.vishay.com . FaxBack 408-970-5600
Si4948EY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
c T J = 175°C 8
g g 0.3
g a; f ID = 3.1 A
08; 8 0.2
_ h' 0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage 50 Single Pulse Power
0.75 llllllll l
Tc = 25°C
Single Pulse
O 50 "
E w'''
I = 250 ',,,,,ps'''' g
(i,' 0.25 D WA I "
Z /'" g N
E: D. 20
U) / y
,,.,-'''''' "s,
-0.25 0
-50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 30
TJ - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E g 0.2 Notes:
'8 E PD”
g -- 0
Lu tt5 0.1
u g -1 " _
o 0) - ta -
a _ 1. Duty Cycle, D = T
g 2. Per Unit Base = RNA = 625°CNV
a 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
lo-A 10-3 10-2 Io-l 1 10 30
Square Wave Pulse Duration (sec)
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b4 S-99444-Rev. E, 29-Nov-99
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