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SI4947ADYVISHAYN/a1075avaiDual P-Channel 30-V (D-S) MOSFET
SI4947ADYN/a3255avaiDual P-Channel 30-V (D-S) MOSFET


SI4947ADY ,Dual P-Channel 30-V (D-S) MOSFET  FaxBack 408-970-5600S-00024—Rev. B, 24-Jan-002-1Si4947ADYNew ProductVishay Siliconix 

SI4947ADY
Dual P-Channel 30-V (D-S) MOSFET
VISHAY
Si4947ADY
New Product
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.080 @ VGS = -10 v $39
-30 0.135 @ sz = -A.5 v $3.0
Top View
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V05 -30
Gate-Source Voltage VGS l 20
TA=25°C ce3.9 i3.0
Continuous Drain Current (To = 15000)a ID
TA=70°C i3.1 i2,4 A
Pulsed Drain Current IDM i 20
continuous Source Current (Diode Conduction)" ls -1.7 -1.0
TA = 25°C 2.0 1.2
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.76
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 54 62.5
Maximum Junction-to-Ambient" RthJA
Steady State 87 105 "C/W
Maximum Junction-to-Foot Steady State RthJF 34 45
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71101
S-00024-Rev. B, 24-Jan-00
www.vishay.com . FaxBack 408-970-5600
Si4947ADY VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 11A -1.0 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V cl: 100 nA
VDs=-24V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
VDs---24V VGs= 0V, TJ = 70°C -10
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -1 0 V -1 5 A
VGS = -10 V, ID = -3.9 A 0.062 0.080
Drain-Source On-State Resistancea fDS(on) Q
Vss---4.5 V, ID=-3.0A 0.105 0.135
Forward Transconductancea gfs I/rss = -15 V, ID = -2.5 A 5.0
Diode Forward Voltagea VSD Is = -1.7 A, VGs = 0 V -0.82 -1.2 V
Dynamic''
Total Gate Charge Q9 5.8 8
Gate-Source Charge Qgs VDS = -10 V, VGS = -5 V, ID = -3.9 A 2 nC
Gate-Drain Charge di 1.9
Turn-On Delay Time td(on) 8 15
Rise Tlme tr VroD=-10V,RL=10Q 9 18
Turn-Off Delay Time tam) '0 E -1 A, VGEN = -1 0 V, R6 = 6 Q 21 40 ns
Fall Time k 10 20
Source-Drain Reverse Recovery Time In IF = -1.7 A, di/dt = 100 Alps 27 40
a. Pulse test; pulse width s 300 p5, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 20 I I I
C,,,,:,, Tc=-55°C (/
li W m V
12 // 12 7} 125''C
iii". ig"
E 8 E 8
O. ' 4V D.
- 4 - 4
O 2 4 6 8 0 1 2 3 4 5 6 7
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71101
2-2 S-00024-Rev. B, 24-Jan-00
VISHAY
Si4947ADY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9’, 0.24
g 0.18
8 VGS = 4.5 v ",,//
I 0.12 o,,,--'''''
' m.....-'"
v v = 10V
jf' GS
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
v03 = 10 v
E ID = 3.9 A
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
I s — Source Current (A)
0 0.3 0.6 0.9 12
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
"----,
200 \ _ Coss
"s-.-..
0 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1.6 - ID = 3.9 A "
',,,,,,w''''"
s,,,,,,,,.''''''
0.8 ,/
',,,,w'''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
024 ID: 3.9A
0.16 (
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71101
S-00024-Rev. B, 24-Jan-00
www.vishay.com . FaxBack 408-970-5600
Si4947ADY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 30
0.6 // 24 N,
(h4 ID=250uA s,,P'' )
,/ 18 N
Power (W)
VGS(th) Variance (V)
-50 -25 0 25 50 75 100 125 150 10-2 IO-l 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
[ii ' T
8 a 0.1 PDM
& (E 1
E t1 _
ly, -ly-1 t2
a 1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 87°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
E E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71101
b4 S-00024-Rev. B, 24-Jan-00
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