SI4936DY ,Dual N-Channel Enhancement Mode MOSFETSi4936DYJune 1999Si4936DY*Dual N-Channel Enhancement Mode MOSFET
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SI4936DY
Dual N-Channel Enhancement Mode MOSFET
Si4936DY June 1999 Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are � 5.8 A, 30 V. R = 0.037 Ω @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor’s advance R = 0.055 Ω @ V = 4.5 V process that has been especially tailored to minimize DS(ON) GS on-state resistance and yet maintain superior switching performance. � Low gate charge. These devices are well suited for low voltage and � Fast switching speed. battery powered applications where low in-line power � High power and current handling capability. loss and fast switching are required. Applications � Battery switch � Load switch � Motor controls ’� ’� ’� ’� *� 6� *� 62�� 6� 7L$EVROXWH�0D[LPXP�5DWLQJV��$ 6\PERO 3DUDPHWHU 5DWLQJV 8QLWV 9H9 9H96± ,$’ GH 3LVZRH3:’ LVZRH3 7W&-*° 7KHUPDO�&KDUDFWHULVWLFV EPD°5θ HD5° θ 3DFNDJH�2XWOLQHV�DQG�2UGHULQJ�,QIRUPDWLRQ ’HYLFH�0DUNLQJ ’HYLFH 5HHO�6L]H 7DSH�:LGWK 4XDQWLW\ ,6P ������GQLWFDDPUEMHFWJHWZRQ� 1999 Si4936DY Rev. A WLILFDWLRQULRUSLWKRXFKDQWRVXVRXFHJQXIXUDQ’LH XQLWVP¶¶’< -& &:1RWH7KHUPO5HVLVWDQFH-XQFWLRQWR&DV -$ &:7KHUPO5HVLVWDQFH-XQFWLRQWR$LHQW 67 WR2SHUDWLQJDQG6RUDJH-XQFWLRQ7HPSHUDWXUH5DQJH7 1RWHF 1RWHE U’LVSDWLRQIRU6LQJOH2SHUDWLRQ 1RWHD U’LVSDWLRQIRU6LQJOH2SHUDWLRQ 3XOV 1RWHD&RQWLQXRXV’UDLQ&XUUHQW *6 *DWH6RXUF9ROWDJH ’66 ’UDLQ6RXUF9ROWDJH &XQOHVVRWKHUZVHQRWHG
