SI4926DY ,Asymentrical Dual N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-00238—Rev. A, 21-Feb-002-1Si4926DYNew ProductVishay Siliconix
SI4926DY
Asymentrical Dual N-Channel 30-V (D-S) MOSFET
VISHAY
Si4926DY
New Product
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
Channel-l 0.022 @ VGS = 10 V 6.3
30 0.030@VGs=4,5V 5A
Channel-2 00125 @ VGs = 10 V 10.5
0.017@Vss=4.5V 9.0
Top View
(3,o-1
N-Channel 1
MOSFET
D2 D2 D2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Channel 1 Channel 2
Parameter Symbol 10 secs Steady State 10 secs Steady State Unit
Drain-Source Voltage VDS V
Gate-Source Voltage VGS
TA = 25°C 6.3 5.3 10.5 7.5
Continuous Drain Current (To = 150°C)a ID
TA = 70°C 5.4 4.2 8.5 6.0 A
Pulsed Drain Current bs, 30 40
Continuous Source Current (Diode Conduction)" ls 1.3 0.9 2.2 1.15
a-- 25''C 1.4 1.0 2.4 1.25
Maximum Power Dissipationa PD W
TA = 70°C 0.9 0.64 1.5 0.80
Operating Junction and Storage Temperature Range Tr Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Channel 1 Channel 2
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 72 90 43 53
Maximum Junction-to-Ambient" Rth0A
Steady-State 100 125 82 100 "C/W
Maximum Junction-to-Foot (Drain) Steady-State Rmoc 51 63 25 30
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71143
S-00238-Rev. A, 21-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4926DY VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
G t Th h ldV It V V V I 250 A Ch-1 0.8 V
a e res o o age h = , = 11
GS(t ) DS GS D Ch-2 0.8
Gat Bod L k I V OVV 20V Ch-l 100 A
a e- 0 ea a e = , = n
y g GSS DS GS Ch-2 1 00
v -24vv -ov Ch-l 1
DS ' GS Ch-2 1
Zero Gate Voltage Drain Current loss C 15 11A
V =24 V,V =0V,T =85°C
DS GS J Ch-2 15
0 Stat D ' C ta I V 5V.1/ 10V Ch-l 20 A
n- a e ram urren = , =
D(on) DS GS Ch-2 30
VGS = 10 V, ID = 6.3 A Ch-1 0.018 0.022
. . VGs= 10 V, Io-- 10.5A Ch-2 0.0105 0.0125
Drain-Source On-State Resistance rDS(on) Q
VGS = 4.5 V, ID = 5.4 A Ch-1 0.024 0.030
VGS = 4.5 V, ID = 9.0 A Ch-2 0.0135 0.017
VDS=15V, ID=6.3A Ch-1 17
Forward Transconductancea gfs S
Vos=15V,lo=10.5A Ch-2 28
ls=1.3A,VGs-- 0V Ch-1 0.7 1.1
Diode Forward Voltagea VSD V
ls = 2.2 A, VGS = o v Ch-2 0.72 IA
Dynamicb
Ch-1 8.0 12
Total Gate Charge Qg
Channel-l Ch-2 18 25
VDs= 15V, VGS= 5V,ID= 6.3A Ch-1 1.75
Gate-Source Charge Qgs nC
Channel-2 Ch-2 3.6
Vos-- 15 V, VGs= 5V, 1cr=-10.5A Ch-1 3.2
Gate-Drain Charge di
Ch-2 7.8
T O D I Ti t Ch-1 10 20
urn- n e a me
y d(on) Ch-2 13 30
Channel-I
- - Ch-1 5 10
RiseTime tr N/DD=15V,Ru=15Q
|D§1A1VGEN=1OV1RG=BQ Ch-2 IO 20
Channel-? Ch-1 26 50
Turn-Off Dela Time - - ns
y td(ott) VDD - 15 V, RL - 15 Q Ch-2 37 80
ID ----1A,VGEN--10V,RG--60
Ch-1 8 16
Fall Time tt
Ch-2 27 50
. . IF = 1.3 A, di/dt = 100 Alps Ch-1 30 60
Source-Drain Reverse Recovery Time trr .
IF = 2.2 A,di/dt= 100 uA/us Ch-2 35 70
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71143
2-2 S-00238-Rev. A, 21-Feb-00
VISHAY
Si4926DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS =10thru 4 v
E 3 v 3‘;
g 18 m--''""-" g
o /"'" y
o 12 E
I \ 2 V
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.04 A
ors, 0.03 ..,i=i.
,1) VGS = 4.5 V g
6 0.02 VGS = 10 v I
LS 0.01
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
A Vos = 15 V
ty b = 6.3 A A
ll,', 8 cr
g gt-;
8 .1) m
f] f n; E
s) / 8 2
9 4 I V
I " J)
g ,__/ f
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
CHANNEL 1
Transfer Characteristics
TC = 125°C
25°C /
J VJ)) -55'C
0 #14 I I
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Capacitance
1000 t
Fs, Ciss
400 ' 's,
l "ss. Coss
'ss...,,
O 6 12 18 24 3O
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1.6 - ID = 6.3 A
1.4 //
1.2 //
0.8 /'/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 71143
S-00238-Rev. A, 21-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4926DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL 1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A a 0.08
'f: TJ = 150°C t;
g "G 0.06
c?) ('3 0.04
I A ID = 6.3 A
U) g N,
f 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
o 2 ID = 250 “A
ri,e', Ah0 it 60
E 's. a
'I AJ.2 _ t N
E 'ss, tl.
> 's, N
Ah6 Nc \
'N, 20
AJ.8 's,
-50 -25 o 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
jd Duty Cycle = 0.5
E a 0.2
if,' g
E , 0.1
l? a 0.1
Single Pulse
10-4 1O-3 Itr2 IO-l 1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 100°CNV
3. Tou - TA = PDMzthJAm
4. Surface Mounted
100 600
www.vishay.com . FaxBack 408-970-5600
Document Number: 71143
S-00238-Rev. A, 21-Feb-00
VISHAY
New Product
Si4926DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL 1
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
'l. iii 0.2
ilz,' ' 0.1
g s 0.1
(-4 E 0.05
fl 0.02
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL 2
Output Characteristics Transfer Characteristics
40 I I 40 I
VGS = 10 thru 4 V
Ct 3 v moi:.".
E 24 s...---''''''' - E 24
0) tl)
y o,--''"'''" y
o pp''''''''" o
Es 16 E' 16
CI CI Tc = 125°C /
_ 8 - 8
25°C \[ I
1, 2 V -551
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.030 2000
"d" 0.024 1600 \
v E 'ss, C.
ID Ch ISS
g 8 '''"'''s----.....d.1s,
Es' 0.018 c 1200
g VGS = 4.5 V ID
1 0.012 Ves - 10 V I 800 's, Coss
tji) "s,
f 0.006 400
0 B 16 24 32 4O 0 6 12 18 24 30
ID - Drain Current(A)
VDS - Drain-to-Source Voltage (V)
Document Number: 71143
S-00238-Rev. A, 21-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4926DY
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
ls — Source Current (A) V GS — Gate-to-Source Voltage (V)
VGSM Van'ance (V)
Gate Charge
VDS= 15V
8 - ID=10.5A
0 6 12 18 24 30
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 ”A
.4 "s,
4.5 "s,
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
rDsmn) — On-Resistance(§2)
(Normalized)
rDS(on) — On-Resistance( 9)
Power (W)
CHANNEL 2
On-Resistance vs. Junction Temperature
1.8 l l
VGS = 10 V
1.6 - ID=10.5A
1.4 ',,,,W'''''
1.2 ',,w''''" w,,,,,,''''''
0.8 l/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.02 N, ID=10.5A -
O 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
0.001 0.01 0.1 1 10
Time (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71143
S-00238-Rev. A, 21-Feb-00
VISHAY
Si4926DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL 2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tO a.)
J-' g 0.2 Notes:
2 Ch PDM
ID - i
E , 0.1 "
8 t, t2 tl
€15 1.Du1y Cycle,D= 7,
g 2. Per Unit Base = RthJA = 82°CIW
z 3. Ta, - TA = PDMZmJA“)
4. Surface Mounted
Single Pulse
10-4 10-3 Ity-it Io-l 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
g Duty Cycle = 0.5
TD 0.2
uh'. a
g F, 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71143 www.vishay.com . FaxBack 408-970-5600
S-00238-Rev. A, 21-Feb-00 2-7
:
www.loq.com
.
