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SI4922DY
Dual N-Channel 30-V (D-S) MOSFET
VISHAY
New Product
Si4922DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY tN,
Vros (V) rDS(on) (C2) ID (A) git? 2'kss
0.016@Vss=10V 8.8 ttlt, et tto'
30 0.018 @ VGS = 4.5 V 8.3 "est'
0.024 @ Ves = 2.5 V 7.2
D1 D2 D2
G1 o-] G2 o-]
Top View
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage N/ss i 12
TA = 25''C 8.8 6.7
Continuous Drain Current (T: = 150°C)8 lo
TA = 70''C 7.1 5.3
Pulsed Drain Current IBM 1 30
Continuous Source Current (Diode Conduction)a ls 1.7 0.9
TA = 25''C 2.0 1.1
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 45 52.5
Maximum Junction-to-Ambient" R
Steady State WA 85 110 “CNV
Maximum Junction-to-Foot (Drain) Steady State RthJF 26 35
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71309
S-20112-Rev. B, ll-Mar-OC?
www.vishay.com
. I=7''"
Si4922DY VISHAY
Vishay Siliconix New Product
SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 0.60 V
Gate-Body Leakage IGSS VDs = 0 V, VGs = ck 12 V l 100 nA
VDS=24V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=551 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 30 A
VGs=10 V, ID=8.8A 0.013 0.016
Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 8.3 A 0.015 0.018 Q
Was = 2.5 V, ID = 7.2 A 0.020 0.024
Forward Transconductancea gfs Vos = 15 V, ID = 8.8 A 30 S
Diode Forward Voltagea VSD Is = 1.7 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Q9 22 33
Gate-Source Charge Qgs VDs = 15 V, VGS = 4.5 V, ID = 8.8 A 5.8 nC
Gate-Drain Charge di 5.8
Turn-On Delay Time tum") 12 24
Rise Time tr VDD =15 V, RL =15 Q 10 20
Turn-Off Delay Time tam) lo 2 1 A, VGEN = 10 V, Re = 6 Q 75 150 ns
Fall Time If 26 50
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 30 60
a. Pulsetest; pulse width s 300 us, duty cycle s: 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 10 thru 3 V
"'t' 18 E: 18
5 12 .0. 12 I
I I Tc = 25"C
f 6 2 V f 6 A
\! I -55''
1 V 'T/ C
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) N/ss - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71309
2 S-20112-Rev. B, 11-Mar-02
VISHAY
Si4922DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a 0.05
.‘E 0.04
t 0.03
E 0.02
0 6 12 18 24 30
ID - Drain Current(A)
Gate Charge
Vros = 15 V
jji?. 1.3 = 8.8 A
8, 8 I
"ii,'' 4
0 10 20 30 40 50
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T J = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Capacitance
C — Capacitance (pF)
O 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l l
Veg: 10V
lro=8.8A
(Normalized)
0.8 4/
rosmn) — On-Resistance (Q)
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0-05 ID = 8.8 A
's.,.".......,
roam) - On-Resistance (£2)
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71309
S-20112-Rev. B, ll-Mar-Of?
www.vishay.com
. I=7''"
Si4922DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "s, 40
"s, ID = 250 “A
8 -0 0 30
"ir'..] -0.2 o. 20
-0.4 'N,. IO
'N, "s,
-50 -25 0 25 50 75 100 125 150 10-2 IO-l 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
/?,i 0.2
if',' E Notes:
i-,'?,] T
g a, 0.1 PDM
g ff l
g -ly-1 ta tl
a 1. Duty Cycle, D = T2
2, Per Unit Base = RthJA = 85°CNV
. 3. To, - TA = PuMZthoA(t)
Single Pulse 4. Surface Mounted
ltr" 10-3 10-2 Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
.03 Duty Cycle = 0.5
".s1z'ii',a. 0.2
if',' g
8 E 0.1
Single Pulse
10-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71309
4 S-20112-Rev. B, 11-Mar-02
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