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SI4896DY
N-Channel 80-V (D-S) MOSFET
VISHAY
Si4896DY
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
Vishay Siliconix
VDs(V) rosmnusz) ID (A) “Q ‘9
0.0165 @ VGS = 10 v 9.5 “G kts
80 G ttro
0.022 © VGS = 6.0 v 3.3 't tt et
s D G OJ
Top Jew
Ordering Information: Si4896DY -
Si4896DY-T1 (with Tape and Reel) N Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V95 80
Gate-Source Voltage N/ss i 20
TA = 25''C 9.5 6.7
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C 7.6 5.4
Pulsed Drain Current IBM 50 A
Avalanch Current L = 0.1 mH IAS 40
Continuous Source Current (Diode Conduction)" ls 2.8 1.4
TA=25°C 3.1 1.56
Maximum Power Dissipation" PD W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 33 40
Ma im m J nction-to-Ambienta R
XI u u I I Steady State WA 65 80 ''CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 17 21
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71300 www.vishay.com
S-03950-Rev. B, 26-May-03
Si4896DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 0A 2.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=64V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=64V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 50 A
VGs=10 1/,ID=10A 0.0135 0.0165
Drain-Source On-State Resistancea rDS(on) Q
VGS = 6.0 v, ID = 8.0A 0.0175 0.022
Forward Transconductancea gts VDs = 15 V, b = 10 A 25 S
Diode Forward Voltages I/sro Is = 2.8 A, Veg = 0 V 0.75 1.1
Dynamicb
Total Gate Charge % 34 41
Gate-Source Charge Qgs Vos = 40 V, VGS = 10 V, ID = 10 A 7.5 nC
Gate-Drain Charge di 11.0
Gate Resistance R9 J2 0.85 1.2 Q
Turn-On Delay Time tam) 17 25
Rise Time tr VDD = 40 V, RL = 40 Q 11 17
Turn-Off Delay Time tam) ID _ 1.0 A, VGEN = 10 V, Re = 6 C2 40 60 ns
Fall Time tf 31 45
Source-Drain Reverse Recovery Tlme trr IF = 2.8 A, dildl = 100 Alps 45 75
a. Pulsetest; pulse width s 300 us, duty cycle s: 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
Vss =10thru 6 V
E’ 30 E 30 (l
g' 20 5 V g' 20
' --"-"" ' Tc = 125°C
- 10 - 10
25°C f
3, 4 V
0 2 4 6 8 10 0 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71300
S-03950-Rev. B, 26-May-03
VISHAY
Si4896DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
i,; 0.03
t 0.02 VGs = 6 V
, VGS = 10 V
f 0.01
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
VDS = 40 v
ID = 10 A
VGS - Gate-to-Source Voltage (V)
O 15 30 45 60
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
T., =1sooc
Is - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
2000 's--..,.,.... Ciss
1000 f
500 /\. Coss
0 20 40 60 80
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5 l _
VGS = 10 V
ID = 10 A
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.06 ID = 10 A
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71300
S-03950-Rev. B, 26-May-03
www.vishay.com
Si4896DY VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
V650,» Variance (V)
Threshold Voltage AvalancheCurrent vs. Time
1.0 100
0.5 Sc
's, ID = 250 “A
"ii:". 10
0.0 ?t
0.5 "ss, T = 125°C
-1.5 0.1
-50 -25 0 25 50 75 100 125 150 10-5 10-4 10'3 10-2 IO-l 1 10
To - Temperature (°C) Time (sec)
Single Pulse Power
g 30 N
0.01 0.1 1 10 100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ii' Duty Cycle = 0.5
g E 0.2
"if',' g Notes:
5 E 0.1 -T-
l? a, 0.1 PDM
g -lt-I t2
2 1. Duty Cycle, D = T1
2. Per Unit Base = RmJA = 65°CNV
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71300
S-03950-Rev. B, 26-May-03
“5% Si4896DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
g Duty Cycle = 0.5
s a 0.2
if',' g
lt ' 0.1
E E 0.1
Single Pulse
10-4 10-3 10-2 IO-l 1 10 100 1000
Square Wave Pulse Duration (sec)
Document Number: 71300 www.vishay.com
S-03950-Rev. B, 26-May-03 5
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