SI4892DY ,N-Channel 30-V (D-S) Rated MOSFETS-03662—Rev. B, 14-Apr-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4894BDY , N-Channel, 30-V (D-S) MOSFET
SI4894BDY , N-Channel, 30-V (D-S) MOSFET
SI4894DY ,N-Channel 30-V (D-S) MOSFETS--31989—Rev. D, 13-Oct-033I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4896DY ,N-Channel 80-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 1Si4896DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4900DY , N-Channel 60-V (D-S) MOSFET
SLA24C08-D , 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
SLA2502M , 4-circuit High-side Power Switch Array
SLA3001M , LOW-VOLTAGE, HIGH-CURRENT 1.8 V LINEAR REGULATOR
SLA3002M , LOW-VOLTAGE, HIGH-CURRENT 1.8 V LINEAR REGULATOR
SLA3004M , 3-Output Dropper/Switching Type
SLA3005M , 4-Output, Low Dropout Voltage Dropper Type for USB Hub
SI4892DY
N-Channel 30-V (D-S) Rated MOSFET
VISHAY
Si4892DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
30 O.012@VGS=1OV 12.4
0.020 ©Vss =4.5v 9.6
Top IAew
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGs l 20
TA=25°C 12.4 8.8
Continuous Drain Current (T J = 150oC)a ID
TA = 70°C 9.9 7.0
Pulsed Drain Current IDM l 50
Continuous Source Current (Diode Conduction)a Is 2.60 1.3
TA = 25°C 3.1 1.6
Maximum Power Dissipationa PD W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 34 40
Maximum Junction-to-Ambient (MOSFET)a RWA
Steady State 70 80 “CM
Maximum Junction-to-Foot (Drain) Steady State RM}: 17 20
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71407 www.vishay.com
S-03662-Rev. B, 14-Apr-03
Si4892DY
VISHAY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.80 V
Gate-Body Leakage less VDS = 0 V, VGS = i 20 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=7O°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 50 A
VGS= 10 V,lro=12.4A 0.010 0.012
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5V, ID= 9.6A 0.016 0.020
Forward Transconductancea 9ts VDs = 15 V, ID = 12.4 A 27 S
Diode Forward Voltage" I/sro Is = 2.6 A, Veg = 0 V 0.75 1.2
Dynamicb
Total Gate Charge % 8.7 10.5
Gate-Source Charge Qgs Vos = 15 V, VGS = 5.0 V, ID = 12.4 A 2.4 nC
Gate-Drain Charge di 3.5
Gate Resistance Re 0.1 1.1 IS Q
Turn-On Delay Time thon) 10 20
Rise Time tr VDD =15 V. RL =15 Q 11 2O
Turn-Off Delay Time tam) lo E 1 A, VGEN = 10 V, Re = 6 Q 24 50 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Tlme trr IF = 2.6 A, dildl = 100 Alps 50 75
a. Pulsetest; pulse width 5 300 gs. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50 I
40 VGS = 10 thru 4 V 40 (l
ig" Ct
E 30 E 30
E 20 C v Es 20
I --- I Tc = 125''C
o p''''"' o
- 10 - 10 If
I 25 C sss:ji,7 - 55D C
2V 1 1 l
0 1 2 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71407
S-03662-Rev. B, 14-Apr-03
VISHAY
Si4892DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10V
0.010 -
I’Dsmn) - On-Resistance ( Q )
0 10 20 30 4O 50
ID - Drain Current(A)
10 l l Gate Charge
VDS=15V
8- |D=12.4A /
VGS - Gate-to-Source Voltage(V)
0 2 4 6 8 IO 12 14 16
09 - TotalGate Charge(nC)
Source-Drain Diode Forward Voltage
TJ=150°C
Is - Source Current(A)
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDs(on) - On-Resistance(g)
rDS(on) - On-Resistance(Q
C — Capacitance (pF)
(Normalized)
Capacitance
i, Ciss
't. Crss\\‘
15 20 25 30
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS=10V ",,p''''
_- b=12.4A r
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
|D=12.4A
2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71407
S-03662-Rev. B, 14-Apr-03
www.vishay.com
Si4892DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4 l l 50
0.2 "ss. ID = 250 uA
S -0.0
8 'hc E 30
g -0.2 "
'i,',' "s, g
A -0 4 "ss. Cl.
g: . "N 20
f 'N, \
-0.6 , N
-0.8 .
N ss.,.,
... ‘_
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 1 10 100 600
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g 8 0.2
"if',' E Notes:
it ' th1 J,,,-,
E E th1 f”
T, _ 0.05
g ‘L tc ---1,
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 70°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
E: 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71407
S-03662-Rev. B, 14-Apr-03
:
www.loq.com
.
