SI4888DY ,N-Channel Reduced Qg, Fast Switching MOSFETS-03662—Rev. D, 14-Apr-031Si4888DYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWISE ..
SI4890DY ,N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-56948—Rev. A, 01-Feb-992-1Si4890DYVishay Siliconix
SI4888DY
N-Channel Reduced Qg, Fast Switching MOSFET
ViSHAY
Si4888DY
N-Channel Reduced Qg,
Vishay Siliconix
Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.007@VGS= 10V 16
0.010@VGs=4.5V 13
Top Mew
N-Channel MOSFET
L"J13:
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDs 30
Gate-Source Voltage VGS l 20
TA = 25°C 16 11
Continuous Drain Current (T J = 15ty'C)a ID
TA = 70°C 13 8
Pulsed Drain Current IDM i 50
Continuous Source Current (Diode Conduction)" Is 3.0 1.40
TA = 25°C 3.5 16
Maximum Power Dissipation" Po W
TA = 70°C 2.2 1.0
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 29 35
Maximum Junction-to-Ambient (MOSFET)a RNA
Steady State 65 80 ''C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 18
a. Surface Mounted on l" x 1" FR4 Board.
Document Number: 71336
S-03662-Reth D, 14-Apr-03
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Si4888DY
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 0.80 1.6 V
Gate-Body Leakage IGSS VDS = O V, VGS = i 20 V i 100 nA
VDs=24V,Vss--0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=701 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 40 A
I/cs = 10 V, ko = 16 A 0.0058 0.007
Drain-Source On-State Resistancea rDS(on) Q
VGS=4.5V, ID: 13A 0.008 0.010
Forward Transconductancea gfs Vos = 15 V, b = 16 A 38 S
Diode Forward Voltagea VSD ls = 3 A, VGS = 0 V 0.74 1.1
Dynamicb
Total Gate Charge Qg 16.3 24
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 16 A 4 I
Gate-Drain Charge di 5.9
Gate Resistance Re 0.5 1.5 2.6 Q
Turn-On Delay Time tum") 14 20
RiseTIme tr VDo=15V,RL=15Q IO 15
Turn-Off Delay Time tim/i) lo E 1 A, VGEN = 10 V, Re = 6 Q 44 70 ns
Fall Time If 20 30
Source-Drain Reverse Recovery Time trr IF = 3 A, di/dt = 100 Ahss 40 70
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 10 hru 3 V
i ii:.".
E 30 E 30
E 20 IE' 20
ca CI I
' l Tc = 125''C /
10 10 25°C f
1 v 2 l 1t,zt,( -5500
O I I 0 j
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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2 S-03662-Rev, D, 14-Apr-03
ViSHAY
Si4888DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
"d" 0.016
Ea' 0.012
ttt V 4 5 V
C GS-- .
'l 0.008
E" VGS = 10 V
'- 0.004
O 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
V = 15 v
m a - ID - 16A
f,' /''"
'll 4 .
o -,,,/''
g 2 '"
0 7 14 21 28 35
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
3 T J = 150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDS(on) - On—Resistance(§2)
rosmn) - On-Resistance(9
C - Capacitance (pF)
(Normalized)
Capacitance
2000 \\ Ciss
1500 I
1000 Ns,
"s.. Coss
500 Crss
0 5 10 15 20 25 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1l5 - b-- 16A
1.4 ,,,,/'
0.8 wr'''
s,,,,,,,,,,-"'''"
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
b = 16 A
0.01 _
0 2 4 6 8 10
VGs - Gate-to-Source Voltage (V)
Document Number: 71336
S-03662-Reth D, 14-Apr-03
www.vishay.com
Si4888DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4 l l 100
"ss,, ID = 250 “A
0.2 'cms,, 80
S -0.0 E
g V 60
E -0.2 \ g
> 'N /il
",iC,c.] 40
8 -0 4
-0.6 \\
-0.8 O
-50 -25 O 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
fl! ' 0.2
g F, 0.1 PDM
g ff l
-1 t1 _
g ta --d t
a 1. Duty Cycle, D = T;
2, Per Unit Base = RthJA = 68''CAN
. 3. To, - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
1 Duty Cycle = 0.5
if',' g
'i' E 0.1
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
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DocumentNumber: 71336
S-03662-Rev, D, 14-Apr-03
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