SI4886DY ,N-Channel Reduced Qg, Fast Switching MOSFET FaxBack 408-970-5600S-00206—Rev. A, 21-Feb-002-1Si4886DYNew ProductVishay Siliconix
SI4886DY
N-Channel Reduced Qg, Fast Switching MOSFET
VISHAY
Si4886DY
New Product
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.010@VGS=10V 13
0.0135 @ VGS = 4.5 V
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage V68 ck 20
TA = 25°C 13 9.5
Continuous Drain Current (To = 15ty'C)a ID
TA = 70°C 10.5 7.6 A
Pulsed Drain Current IDM i 50
Continuous Source Current (Diode Conduction)" ls 2.60 1.40
TA = 25°C 2.95 1.56
Maximum Power Dissipation" Pn W
TA=70°C 1.90 1.0
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 35 42
Maximum Junction-to-Ambient (MOSFET)a RthJA
Steady State 68 80 "C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 23
a. Surface Mounted on 1"x1" FR4 Board.
Document Number: 71142
S-00206-Rev. A, 21-Feb-00
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Si4886DY VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 0A 0.80 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V i 100 nA
VDS=24V,VGS=OV 1
Zero Gate Voltage Drain Current loss WA
Vros=24V,Vss--0V,Tu=70oC 5
On-State Drain Current3 low") VDS 2 5 V, VGS = 10 V 40 A
. . VGs= 10 V, ID: 13A 0.0078 0.010
Drain-Source On-State Resistances rDS(on) Q
VGS=4.5V,|D= 11A 0.0105 0.0135
Forward Transconductancea gfs Vos = 15 V, ID = 13 A 38 S
Diode Forward Voltagea VSD ls = 2.6 A, VGS = O V 0.74 1.1
Dynamic"
Total Gate Charge O9 14.5 20
Gate-Source Charge Qgs Vos = 15 V, VGS = 5.0 V, ID = 13 A 3.2 nC
Gate-Drain Charge ' 4.3
Turn-On Delay Time td(on) 14 20
RiseTIme tr Vcxo=15V,Ru=15Q 5 10
Turn-Ott Delay Time td(off) '0 E 1 A, VGEN = 10 V, RG = 6 Q 42 80 ns
Fall Time tf 18 30
Source-Drain Reverse Recovery Time trr IF = 2.6 A, di/dt = 100 A/gs 4O 70
a. Pulsetest; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
/"'' Vcs=10thru4V
ii'.:", ,fs.b"
E 30 E 30
'r, 'E
Es 20 Es 20
I 3 V I To = 125°C
- 10 - IO
25 C tss, f/ _5500
1 v d a: l
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71142
2-2 S-00206-Rev. A, 21-Feb-00
VISHAY
Si4886DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS=10V
'Dsmm — On-Resistance ( Q)
0 10 20 30 40 50
ID - Drain Current(A)
Gate Charge
1/ros = 15 V /
a _ ko=13A "
VGS — Gate-to-Source Voltage (V)
0 5 10 15 20 25 30
Q9 - Total Gate Charge(nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
Is — Source Current (A)
0.00 0.2 0.4 0.6 0.8 1.0 1.2
N/sro - Source-to-Drain Voltage (V)
rDS(on) — On-Resistance (Q)
rDS(on) — On-Resistance(g)
C — Capacitance (pF)
(Normalized)
500 Crss
1_5_ VGS=10V /
1.4 o,,,,,,,'''''''
Capacitance
"ss Coss
10 15 20 25 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
ID: 13A pr
w,,,,,.''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
0n-Resistance vs. Gate-to-Source Voltage
|D=13A
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71142
S-00206-Rev. A, 21-Feb-00
www.vishay.com . FaxBack 408-970-5600
Si4886DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 l l 60
0.2 |D=250yA 50 y
"ss, 20 Is,
VGS(th) Variance (V)
Power (W)
-0 6 \ 10 's 's
"N, 's'---"--,...,..,,.,,.
-0.8 0
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
3 a 0.1 ''r
(-i,' (E 0.05
E t1 _
ly, -ly-1 t2 1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 68°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
it, E 0.1
g E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71142
b4 S-00206-Rev. A, 21-Feb-00
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