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SI4880DYVISHAYN/a1508avaiN-Channel 30-V (D-S) MOSFET
SI4880DYSiliconixN/a17avaiN-Channel 30-V (D-S) MOSFET


SI4880DY ,N-Channel 30-V (D-S) MOSFETSi4880DYNew ProductVishay SiliconixN-Channel Reduced Q , Fast Switching MOSFETg 

SI4880DY
N-Channel 30-V (D-S) MOSFET
VISHAY
Si4880DY
New Product
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.0085@VGs=10V i113
0.014@VGs=4.5V i10
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30 V
Gate-Source Voltage VGS i 25
. . TA = 25°C d: 13
Continuous Drain Current (TJ = 150°C)a. b ID
TA = 70°C d: 10 A
Pulsed Drain Current (10 us Pulse 1/1hdth) IDM i 50
Continuous Source Current (Diode Conduction? b Is 2.3
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambient (MOSFET)a RthJA "CAN
Steady State 70
a. Surface Mounted on FR4 Board,
b. t s 10 sec.
Document Number: 70857
S-60711-Rev, A, 01-Feb-99
www.vishay.com . FaxBack 408-970-5600
Si4880DY
VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm VDS = VGS, ID = 250 11A 0.8 V
Gate-Body Leakage less VDS = O V, VGS = ck 20 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS pA
VDS=24V.VGS=0V,TJ=55°C 5
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 40 A
. . VGS = 10 V, ID = 13 A 0.0069 0.0085
Drain-Source On-State Resistance" roam) Q
VGS=4.5 V, ID: 10A 0.0115 0.014
Forward Transconductancea gis Vos = 15 V, b = 13 A 26 S
Diode Forward Voltagea VSD ls = 2.3 A, VGS = O V 0.70 1.1 V
Dynamic"
Total Gate Charge Qg 19.5 25
Gate-Source Charge Qgs Vos = 15 V, VGS = 5.0 V, ID = 13 A 4.2 I
Gate-Drain Charge di 8.8
Turn-On Delay Time td(on) 14 22
RiseTIme tr Vrxo--15V,RL=15Q 9 15
Turn-Off Delay Time td(off) lo E 1 A, VGEN = 10 V, Rs = 6 Q 46 70 ns
Fall Time tf 3O 45
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/gs 35 70
a. Pulsetest; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70857
2-2 S-60711-Rev, A, 01-Feb-99
VISHAY
Si4880DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
50 l I
/'''"''" VGS =10thru 4 v
E 30 E
S 20 g
o ---. 3 V o
- 10 -
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0.025
.,t'szs. 0.020 8
g _,...''' So,
I N/ss = 4.5 V c.
8 0.015 "-''" 8
E" - o
g] 0.010 Ves=10V
0 10 20 30 4O 50
ID - Drain Current (A)
Gate Charge
A VDS = 15 V
ty ID = 13 A A
g, 8 g..
g /" g G"
(D - a,
'ii 6 / ii' (4
U.) , g
s,'. C) fl
.9, 4 I V
0 8 16 24 32 40
Q9 - Total Gate Charge (nC)
Transfer Characteristics
Tc = 125°C /
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage(V)
Capacitance
( "ss.....,
0 6 12 18 24 30
V03 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
- ID = 13 A
_,,,,,-''"''''"
-50 -25 O 25 50 75 100 125 150
T: - Junction Temperature ("C)
Document Number: 70857
S-60711-Rev, A, 01-Feb-99
www.vishay.com . FaxBack 408-970-5600
Si4880DY
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
A a 0.08
g 10 To=1500C E; 0.06 ID=13A
'r', 8
8 I 0.04
- 8 O 02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 60
"s, 50 t
A 0.2 \ ID = 250 “A
ty 's t
2 -0.0 ' l
li \ a
'I -0 2 "s, t 30
'sac, l \
cn -0 4 "s. \
> 'Ns. 20 l
\ 10 %
-0.8 “~-
, \“--
-1.0 0
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
I', Duty Cycle = 0.5
3?. 0.2
if',' E Notes:
iii E 0.1 T
8 a, 0.1 PfM
(il (E 0.05
ts -lt-1 t2 1
Z 0.02 l. Duty Cycle, D = T
2. Per Unit Base = Rth0A = 70°CNV
Sin le Pulse 3. TJM - TA = PDMZWA“)
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70857
b4 S-60711-Rev, A, 01-Feb-99
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