SI4850EY ,N-Channel 60-V (D-S) PWM Optimized MOSFETS-03950—Rev. C, 26-May-032-3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resista ..
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SI4850EY
N-Channel 60-V (D-S) PWM Optimized MOSFET
VISHAY
Si4850EY
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
60 0.022 @VGS=1OV 8.5
0.031 @VGS=4.5V 7.2
Top View
Ordering Information: Si4850EY
Si4850EY-TI (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V95 60
Gate-Source Voltage VGs i 20
TA = 25°C 8.5 6.0
Continuous Drain Current (T J = 175°c)a ID
TA = 70°C 7.1 5.0
Pulsed Drain Current IBM 40
Avalanche Currentb IAS 15
Repetitive Avalanche Energyb EAS 11 mJ
TA = 25°C 3.3 1.7
Maximum Power Dissipation" PD W
TA = 70°C 2.3 1.2
Operating Junction and Storage Temperature Range To, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 36 45
Maximum Junction-to-Ambienta RthJA
Steady State 75 90 ''CIVV
Maximum Junction-to-Foot (Drain) Steady State RthJF 17 20
a. Surface Mounted on I" x I" FR4 Board.
b. Guaranteed by design, not subject to production testing.
Document Number: 71146 www.vishay.com
S-03950-Rev. C, 26-May-03
Si4850EY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 60
Gate Threshold Voltage VGS(lh) Ws = VGs, ID = 250 MA 1
Gate-Body Leakage less VDs = 0 V, VGS = i 20 V l 100 nA
Vros=60V,Vss=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=60V,VGS=0V,TJ=55°C 20
On-State Drain Currenta ID(on) Vos 2 5 V, VGs = 10 V 40 A
VCs =10 V, ID=6.0A 0.018 0.022
. . V63: 10 V, ID=6.0 A, To =125°C 0.031 0.037
Dram-Source On-State Resistancea rDs(on) Q
VGS =10 v, ID = 6.0 A, TJ = 175°C 0.039 0.047
VGS = 4.5 V, ID = 5.1A 0.025 0.031
Forward Transconductancea gfs Vos = 15 V, ID = 6.0 A 25 S
Diode Forward Voltagea VSD ls = 1.7 A, VGS = 0 V 0.8 ld?
Dynamicb
Total Gate Charge % 18 27
Gate-Source Charge Qgs I/rss = 30 V, VGS = 10 V, ID = 6.0 A 3.4 nC
Gate-Drain Charge di 5.3
Gate Resistance Rg VGS =0.1 V, f= 5 MHz 0.5 1.4 214 Q
Turn-On Delay Time tam) 10 20
Rise Time tr VDD = 30 V, RL = 30 Q 10 20
Turn-Off Delay Time tam) ID _ 1 A, VGEN = 10 V, RG = 6 Q 25 50 ns
Fall Time tf 12 24
Source-Drain Reverse Recovery Time trr IF = 1.7 A, dildl = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40 tr 40
'/ VGS=1Othru5V
32 I 32
Ct..". f, ig"
E“ 24 I E 24
it 4 V ie I
E' 16 E' 16
I / I Tc = 150°C
- 8 _ 8
25''C y C)
3V M -55 C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71146
2-2 S-03950-Rev. C, 26-May-03
VISHAY
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06 /
0.05 f
VGS = 4.5 V '
I’Dsmn) - On-Resistance ( Q )
0 02 VGS = 10 V
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
V = 30 V
ir; 8 - ID - 6.0 A
0 4 8 12 16 20
09 - TotalGate Charge(nC)
Source-Drain Diode Forward Voltage
T: =175°c
Is - Source Current(A)
0.00 0.5 1.0 1.5 2.0 2.5
VSD - Source-to-Drain Voltage (V)
Capacitance
C — Capacitance (pF)
0 IO 20 30 40 50 60
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
2.2 l l l
2.0 _- sz=1ov vt''
A ll): 6.0A pf
'i'-) 1.8 /
Es' 8 1.6
kll Fs /
é g 1.4 /
I' 1.2 ,/
0.8 //
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 6.0 A
rDS(on) - On-Resistance(Q
0 2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71146
S-03950-Rev. C, 26-May-03
www.vishay.com
Si4850EY \"SEHAY'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.8 l l 50
ID = 250 0A 0
0.4 's, 4 \
0.0 30
-0.4 "s, 20 \
"ss, \
-0.s 'N. 10 N
\ i...
s, ssa.,
-50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000
Power (W)
VGSW) Variance (V)
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
3?; 0.2
"if',' E
it E 0.1 T
T7 g 0.1 PDM
'l': g l
T, _ 0.05
g -21 r t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 75°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
ngle Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71146
2.4 S-03950-Rev. C, 26-May-03
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