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SI4850EY-E3-SI4850EY-T1-SI4850EY-T1-E3
N-Channel Reduced Qg/ Fast Switching MOSFET
VISHAY
Si4850EY
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
60 0.022 @ VGS = 10 v 8.5
0.031 @ VGS = 4.5 v 7.2
Top Mew
Ordering Information: Si4850EY
Si4850EY-E3 (Lead Free)
Si4850EY-T1 (with Tape and Reel)
Si4850EY-T1-E3 (Lead Free with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 60
Gate-Source Voltage VGS i 20
TA = 25°C 8.5 6.0
Continuous Drain Current (To = 175°C)8 ID
TA = 70°C 7.1 5.0
Pulsed Drain Current 'DM 40
Avalanche Current IAS 15
Repetitive Avalanche Energy EAS 11 mJ
TA = 25°C 3.3 1.7
Maximum Power Dissipationa PD W
TA = 70°C 2.3 1.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 =
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 36 45
Maximum Junction-to-Ambienta RNA
Steady State 75 90 °CNV
Maximum Junction-to-Foot (Drain) Steady State Rm”: 17 20
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71146 www.vishay.com
S-40572-Rev. D, 29-Mar-04
Si4850EY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = O V, ID = 250 WA 60
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 MA 1
Gate-Body Leakage IGSS VDs = O V, VGs = $20 V l 100 nA
Vros--60V,VGs--0V 1
Zero Gate Voltage Drain Current loss WA
VDs--60VVss--0V,TJ--55't 20
On-State Drain Currenta 'D(on) Vos 2 5 V, VGs = 10 V 40 A
VGS = 10 v, ID = 6.0 A 0.018 0.022
vss =10 v, ID = 6.0 A, Tu =125°C 0.031 0.037
Drain-Source On-State Resistances TDS(on) Q
VGS =10 v, ID = 6.0 A, TJ = 175''C 0.039 0.047
VGS = 4.5 v.10 = 5.1 A 0.025 0.031
Forward Transconductancea gfs VDS = 15 V, ID = 6.0 A 25 S
Diode Forward Voltagea VSD ls = 1.7A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge 09 18 27
Gate-Source Charge Qgs hs = 30 V, I/ss = 10 V, ID = 6.0 A 3.4 nC
Gate-Drain Charge di 5.3
Gate Resistance Rg l/ss =0.1 V, f = 5 MHz 0.5 1.4 2.4 Q
Turn-On Delay Time td(0n) 10 20
Rise Time t, VDD = 30 V, RL = 30 Q 10 20
Turn-Off Delay Time Mom lo E 1 A, VGEN = 10 v, R9 = 6 Q 25 50 ns
Fall Time tf 12 24
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40 tr 40
'/ VGS=10thru5V
32 I 32
Ci.] f, Cd.]
- 24 - 24
3 4 V 3 I
g 16 g 16
I / I Tc = 150°C
- 8 _ 8
3 V 25 C \jV/j -551
0 0 4/ _
0.0 0.5 1.0 2.0 2.5 3.0 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) Vas - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71146
S-40572-F%v. D, 29-Mar-04
VISHAY
Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06 /
.,ii. 0.04 f
ii', VGS = 4.5 v '
“F 0.03 -
I VGS = 10 V
E" 0.02
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
V = 30 V
s Df /
m 8 ID - 6.0 A
0 4 8 12 16 20
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =175°C
Is — Source Current(A)
0.00 0.5 1.0 1.5 2.0 2.5
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) — On-Resiistance
(Normalized)
roman) — On-Resistance (g2)
Capacitance
0 10 2O 30 40 50 60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2 l l l vt''
2.0- VGs--10V /
ID: 6.0A /
1.2 s,,p''''
-50 -25 0 25 50 75 100 125 150 175
Tu - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 6.0 A
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71146
S-40572-Rev. D, 29-Mar-04
www.vishay.com
Si4850EY \"SEHAY'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.8 l l 50
ID = 250 0A
0.4 's, 40 l
ff.. "s, \
8 0.0 g, 30
tr, it
'l "s, E \
tsa', -0 4 20
m "ht,
> "ss, \
-0.8 'N. IO N
\ i...
s, ssa.,
-1.2 0
-50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
g g 0.2
E ' 0.1 T
g a 0.1 ''p
T: _ 0.05
“Li v-
0.02 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 75°C/W
3. Torg - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
1041 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
li a 0.1
ngle Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71146
4 S-40572-F%v. D, 29-Mar-04
www.ic-phoenix.com
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