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SI4848DY-T1 |SI4848DYT1VISHAYN/a112avaiN-Channel 150-V (D-S) MOSFET
SI4848DY-T1 |SI4848DYT1N/a100avaiN-Channel 150-V (D-S) MOSFET


SI4848DY-T1 ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4848DY-T1 ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 1Si4848DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
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SI4850EY-T1 ,N-Channel Reduced Qg/ Fast Switching MOSFETS-40572—Rev. D, 29-Mar-043I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ( ..
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SI4848DY-T1
N-Channel 150-V (D-S) MOSFET
C=C7'"
VISHAY
Si4848 DY
Vishay Siliconix
N-Channel 150-v (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (C2) ID (A)
150 0.085@VGs= 10V 3.7
0.095 @ VCs = 6.0 v 3.5
Top View
Ordering Information: Si4848DY
Si4848DY-TI (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage VGs i 20 V
TA = 25°C 3.7 2.7
Continuous Drain Current (To = 150°C)3 TA = 70°C ID 3.0 2.1
Pulsed Drain Current IBM 25 A
Avalanch Current L = 0.1 mH IAS 10
Continuous Source Current (Diode Conduction)a ls 2.5 1.3
TA = 25"C 3.0 1.5
Maximum Power Dissipation" TA = 70°C Pry IS 1.0 W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 35 42
Maximum Junction-to-Ambienta Steady State RNA 68 82 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 23
a. Surface Mounted on l" x l" FR4 Board.
Document Number: 71356
S-03950-Rev. B, 26-May-03
www.vishay.com
Si4848DY
Vishay Siliconix
CCCD7'"
VISHAY
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 LA 2.0 V
Gate-Body Leakage less VDs = 0 V, VGS = 1:20 V ch 100 nA
VDS=120V,VGS=0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=120VVss=0V,Tu=551 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 10 V 25 A
VGS = 10 V, ID = 3.5A 0.068 0.085
Drain-Source On-State Resistancea rDS(on) Q
VGS = 6.0 V, b = 3.0A 0.076 0.095
Forward Transconductanoea gfs Vos = 15 V, b = 5 A 15 S
Diode Forward Voltagea VSD ls = 2.5 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Q9 17 21
Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 3.5 A 3.2 nC
Gate-Drain Charge di 6.0
Gate Resistance Rg 0.5 0.85 1.8 Q
Turn-On Delay Tlme td(on) 9.0 14
Rise Time tr VDD = 75 v, RL = 21 Q 10 15
Turn-Off Delay Time tam) lo E 3.5 A, VGEN = 10 V, Re = 6 Q 24 35 ns
Fall Time 1f 17 25
Source-Drain Reverse Recovery Time trr IF = 2.5 A, di/dt = 100 Alps 45 70
a. Pulse test; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 0 thru 6 V
<3 E /
E 15 E 15
E 5 V E
I' 10 e 10
l ’f ' TC = 125°C
- 5 - 5
25°C I
3, 4 V -55°C
0 I 0 I
0 2 4 6 8 10 0 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71356
S-03950-Reu. B, 26-May-03
C=C7'"
VISHAY
Si4848 DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
E 0.12
f,-,' o 09 l
g VGS - 6 V ".--''''''"
t _..---.
I 0.06
E VGS = 10 v
0 5 10 15 20 25
ID - Drain Current (A)
Gate Charge
Vros = 75 V
3 ID = 3.5 A
jlis) 16 ,
(,8, I
8 8 p"
0 6 12 18 24 30
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
E T J = 150''C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
Capacitance
A K Ciss
'ts 900
/ Coss
0 30 60 90 120 150
I/os - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
3.0 l l
VGS = 10 V
A ID = 3.5 A
Cj.. 2.5 -
3 "ii" 2.0
8 (i', "
'1. E ",,,w''''
8 S 1.5
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
a 0.20
C," lro=3.5A
z, 0.15
, 0.10
li" u.....,
f 0.05
0 2 4 6 a 10
V65 - Gate-to-Source Voltage (V)
Document Number: 71356
S-03950-Rev. B, 26-May-03
www.vishay.com
Si4848DY FiiFiii;
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
1.0 60
0.5 "s
"s ID = 250 “A
g 40 t
g 0.0 E l
g "s,, 'i' 30 N
'l)..] -0.5 x 'l N
8 'ss 20
1.0 'ss, 10
-1.5 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g 8. 0.2
"ii g Notes:
8 a, 0.1 Pos,
g .5 1
g “L te t
a l. Duty Cycle, D = T;
2. Per Unit Base = RmJA = 68°C/W
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
ll' Duty Cycle = 0.5
I.' a 0.2
ltx - 0.1
Single Pulse
10-4 10-3 IO-i? 10-1 1 10 100 1000
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71356
4 S-03950-Reu. B, 26-May-03

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