SI4840DY ,N-Channel 40-V (D-S) MOSFETSi4840DYVishay SiliconixN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYV (V) r () I (A)DS DS(on) D0.009 ..
SI4840DY-T1 ,N-Channel 40-V (D-S) MOSFETS-03950—Rev. B, 16-May-032-3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resista ..
SI4842DY ,N-Channel 30-V (D-S) MOSFETS-03662—Rev. B, 14-Apr-033I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistanc ..
SI4848DY ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4848DY ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 1Si4848DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4848DY-T1 ,N-Channel 150-V (D-S) MOSFETS-03950—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
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SI4840DY
N-Channel 40-V (D-S) MOSFET
VISHAY
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
40 0.009@VGS=10V 14
0.012@VGs=4.5V 12
Top bane s
Ordering Information: Si484ODY
Si4840DY-TI (with Tape and Reel)
N-Channel MOSFET
Si484ODY
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 40
Gate-Source Voltage VGS 120
TA = 25°C 14 10
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C 11 8
Pulsed Drain Current IBM 50
Continuous Source Current (Diode Conduction)" ls 2.8 1.4
TA=25°C 3.1 1.56
Maximum Power Dissipation" PD W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 33 40
Maximum Junction-to-Ambienta RNA
Steady State 65 80 oc/w
Maximum Junction-to-Foot (Drain) Steady State Rm}: 17 21
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71188 www.vishay.com
S-03950-Rev. B, 16-May-03
Si4840DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=32V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=32V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 14A 0.0075 0.009
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5V, ID: 12A 0.0095 0.012
Forward Transconductancea 9ts Vos = 15 V, ID = 14 A 50 S
Diode Forward Voltage" I/sro Is = 2.8 A, Veg = 0 V 0.75 1.1
Dynamicb
Total Gate Charge Qg 18.5 28
Gate-Source Charge Qgs VDS = 20 V, VGS = 5 V, ID = 14 A 6 nC
Gate-Drain Charge di 7.5
Gate Resistance R9 J2 0.8 1.2 Q
Turn-On Delay Time thon) 15 30
Rise Time tr VDD = 20 V, RL = 20 Q 10 20 ns
Turn-Off Delay Time tam) ID _ 1 A, VGEN = 10 V, Re = 6 Q 50 100
Fall Time tf 20 4O
Source-Drain Reverse Recovery Tlme trr IF = 2.8 A, dildl = 100 Alps 30 60 ns
a. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 l 50
VGS = 10 thru 4V
Ct ig"
st, 30 E 30 I
o 3 V o )
S 20 S 20
l ' To = 125°C I
© y'''"''" © 1 l I
- 10 - 10 1
2thru0V l _,,d,', -55°C
0 _ o _ _
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V05 - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71188
2-2 S-03950-Rev. B, 16-May-03
VISHAY
Si4840DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020 3000
fit 0.016 C" 2500
g (r) Ciss
S o 2000
'3 0.012 li'. \_
0.1 V = 4.5 V m
8 G31 3 1500
I 0008 V68 = 10 V - '
g 0 1000
if Ns,,
'- 0.004 C
500 Crss oss
0.000 0
0 10 20 30 40 50 8 16 24 32 40
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ 2.0 I _
F VDS=2OV Vss=101/
V ID = 14 A A ID = 14 A
g 8 g 1.6 /
S V w "
tu "ii"
sl-', 6 S, Is' 1 2 4/
o I o m ' -
cn E? E
g. 8 sl? s,,,,,,,.,,,,,,---''''"
d) , v
8 4 pr E 0.8
> 2 0.4
0 7 14 21 28 35 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.04
TJ=150°C A ID=14A
tC 2; 0.03
I' S'.
8 10 ii
g 5 0.02
2,) "iris'"
- if 0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71188 www.vishay.com
S-03950-Rev. B, 16-May-03
Si4840DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 60
0.4 "s 50
o 2 "ss, ID = 250 “A
ID -0.0
E -0.2 Nc g 30
e 's, fi] N
ici' -0.4 ,
> 'ss. l
-0.6 , l
-0.8 "s, 'ts
, "sa,...
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
Il 8 0
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
g f? 1
_.L: v-
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 65°CIW
3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71188
2.4 S-03950-Rev. B, 16-May-03
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