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SI4837DY
P-Channel 30-V (D-S) MOSFET With Schottky Diode
VISHAY
Si4837DY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.020 @ Vss = -10 v 8.3
-30 0.030 @ VGS = -4.5 v 6.8
SCHOTTKY PRODUCT SUMMARY
v, (V)
VKA (V) Diode Forward Voltage IF (A)
30 0.53 v @ 3A 3
OUJUJX
Top Jew
FEATURES
. TrenchFETo Power MOSFET
o LITTLE FOOT Plus"" Schottky
APPLICATIONS
. Battery Charging
o DC/DC Converters
- Asynchronous Buck
- Voltage Inverter
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 Sec l Steady State Unit
Drain-Source Voltage (MOSFET) Vros -30
Reverse Voltage (Schottky) VKA 30 V
Gate-Source Voltage (MOSFET) VGS $20
TA=25°C -8.3 -6.1
Continuous Drain Current (TJ = 150°C) (MOSFET)a, b ID
TA = 70°C -66 -A.9
Pulsed Drain Current (MOSFET) IBM -40 A
Continuous Source Current (MOSFET Diode Conduction)' b ls -2.3 -1.25
Average Foward Current (Schottky) IF 3
Pulsed Foward Current (Schottky) IFM 20
TA=25°C 2.5 1.38
Maximum Power Dissipation (MOSFET)a, b TA = 70°C 1.6 0.88
TA = 25°C 1.5 1.0
Maximum Power Dissipation (Schottky)' b
TA = 70°C 0.98 0.64
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 71662 wwwvishay.com
S-04246-Rev. A, 16-Jul-01
Si4837DY
VISHAY
Vishay SiliConix New Product
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 37 50
Maximum Junction-to-Ambient (t s 10 sec)a
Schottky 65 81
MOSFET WA 70 90
Maxi J tion-to-Ambient/tea/tat) °C/W
axlmum unc Ion o m Ien ( s ea y s a e) Schottky 100 125
MOSFET 20 25
Maximum Junction-to-Foot (Drain) Roo:
Schottky 50 62.5
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 “A -1.0 V
Gate-Body Leakage 'Gss VDS = 0 V, VGS = i 20 V cl: 100 nA
Vros=-24VVss=0V -1
ZeroGateVoltaueDrai C ent I A
r o g r m urr n DSS N/i-MVN/Gs-iT,)--? -10 u
On-State Drain Currenta |D(0n) Vos 2_' -5 V, VGS = -10 V -20 A
VGS =-10V, ID =-8.3A 0.0165 0.020
Drain-Source On-State Resistancea rosam) Q
VGS = -4.5 V, ID = -68 A 0.0245 0.030
Forward Transconductancea gfs VDS = -15 V, ID = -8.3 A 22 S
Diode Forward Voltage3 VSD ls = -2.3 A, VGS = 0 V -0.75 -1 .1 V
Dynamicb
Total Gate Charge Q9 22 33
Gate-Source Charge Qgs Vos = -1 5 V, VGS = -5 V, ID = -8.3 A 9 nC
Gate-Drain Charge di 6.6
Gate-Resistance Re 1.9 Q
Turn-On Delay Time tdwn) 17 26
Rise Time t, VDD = -15 V, RL = 15 Q 15 23
Turn-Off Delay Time td(0ff) ID E -1 A, VGEN = -10 V, Rs = 6 Q 56 85 ns
Fall Time tf 21 32
Source-Drain Reverse Recovery Time trr IF = -2.3 A, di/dt = 100 Alps 45 70
a. Pulsetest; pulse width S 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 3A 0.485 0.53
Forward Voltage Drop VF V
IF = 3A, TJ = 125°C 0.42 0.47
v, = 30 V 0.008 0.1
Maximum Reverse Leakage Current lm, v, = 30 V, TJ = 75°C 0.4 5 mA
Vr=30V,To=125c'C 6.5 20
Junction Capacitance CT Vr = 15 V 102 pF
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DocumentNumber: 71662
S-04246-Rev. A, 16-Jul-01
VISHAY
Si4837DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
50 I _ 50
VGS=10thru5V (/
Ct.". Ct
"fi' Tz,'
'g 30 4 V 'g 30
Q Y''"'"""" Q
'i' 20 0| 20
D CY To = 125°C
10 3 V - 10 o l
25 C y,
l _ -551
0 0 'FU, 1
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) I/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 3500
A Ciss
Ci 0.04 2800
ii" / ri-s"
j) 0.03 - o,,,,-'''' 8 2100
8 VGS = 4.5 V _.,,..-,,---"'''''''" .,ij.
ml m----'''''''" .6
8 "---"- p,
0.02 N/Gs=10V g 8 1400
(7)] 0 Ns, Coss
" 0.01 700 "s--......,.........,
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 l 1.8 _ I l
VDS=15V VGS=10V
A ID=8.3A ID=8.3A /
ty 1.6
tD 8 " A ,,,i''"
5’ Cl /
E ir 1.4
O) 6 C a
'i-,', f j) , /
m 8 a 1.2
a, a: g ',,i''"
E 4 C ©
"ir,'' / C) ,?.i..r.. 1.0
I /,_l Jg .
cn iii"
y F? 0.8 s,,,,,,,,,,,,,,,,-"'''''''''
0 8 16 24 32 40 -50 -25 O 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 71662 wwwvishay.com
S-04246-Rev. A, 16-Jul-01
Si4837DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A 0.056
'ig'] l
if To = 150°C '
8 it' 0.042
cn C) 0.028 ID: 8.3 A i
8 "s--------......
L 0.014
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 200
0.6 d 160
S" ID = 250 WA /
a, 0.4 /
8 " 120 r
.g / g l
fl, 0.2 tg
ii" D. 80
> 0.0 N,
A) 2 "pe'''' 'N,
',,,,,w''''''' "ss,,,.
-50 -25 0 25 50 75 100 125 150 0.001 0 01 OA 1 10
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Js 'o', 0.2
t5 E 0.1
(tli, Tu 0.1
B F, 0.05
'e 0.02
Single Pulse
IO-A 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Notes:
I, Duty Cycle, D = T2
2. Per Unit Base = RNA = 70°CIW
3. Tou - TA = PDMZthAm
4. Surface Mounted
10 100 600
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DocumentNumber: 71662
S-04246-Rev. A, 16-Jul-01
“3% Si4837DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
2 Normalized Thermal Transient Impedance, Junction-to-Foot
g a 0.1
10-4 10-3 1o-2 IO-I 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
E 1 a?
r: tr." TJ = 150 c
a 0.1 a
n: 0.01 fil
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8
TJ - Junction Temperature (°C) VF - Forward Voltage Drop (V)
Capacitance
f: 400
l-C 300
[i 200
_ 100 "ss-.,....,..,
0 6 12 18 24 30
VKA - Reverse Voltage (V
DocumentNumber: 71662 wwwvishay.com
S-04246-Rev. A, 16-Jul-01 5
Si4837DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
Ji g Notes:
3. CL P M
ttax' F,
E t1 _
8 t, -ly-1 t2 --d
(i-i, [E 1. Duty Cycle, D = T;
g 2. Per Unit Base = RNA = 100mm
2 3, TJM - TA = PDMZthJAm
4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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6 S-04246-Rev. A, 16-Jul-01
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