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SI4835DY
P-Channel 30-V (D-S) MOSFET
ic,fiF,Ai, Si4835DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.019@VGs=-10V -8.0
-30 0.033 @ VGS = -4.5 v -61)
S0-8 'Ili'
O(IJ‘IDU)
Top Mew
Ordering Information: Si4835DY
Si4835DY-TI (with Tape and Reel) P Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage VGS 125 V
TA = 25°C -8.0
Continuous Drain Current (T J = 150°C)3, b ID
TA = 70°C -6.4 A
Pulsed Drain Current IDM -50
Continuous Source Current (Diode Conduction)", b ls -2.1
Maximum Power Dissipation' b TA = 2500 PD 2.5 W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambienta RthJA '"CFt4
Steady State 70
a. Surface Mounted on FR4 Board.
b. t 510 sec.
Document Number: 70836 www.vishay.com
S-31062-Rev. B, 26-May-03 1
Si4835DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = -250 pA -1.0 V
Gate-Body Leakage lsss VDS = 0 V, VGS = i 25 V i 100 nA
Vros=-30V,Vss=0V -1
Zero Gate Voltage Drain Current loss liA
Vros=-30V,VGs=0V,TJ=70''C -5
Vos 2 -5V,Vss=-10V -40
On-State Drain Currenta ID(on) A
V032 -5V,VGs=-4.5V -10
V63: -10\/, ID: -8.0A 0.0155 0.019
Drain-Source On-State Resistancea rDS(on) Q
VGS = -4.5 V, lo = -5.0 A 0.027 0.033
Forward Transconductancea gfs VDS = -15 V, ID = -8.0 A 17 S
Diode Forward Voltagea VsD Is = -2.1 A, VGS = 0 V -0.75 -1.2
Dynamich
Total Gate Charge Q9 21 31
Gate-Source Charge Qgs VDs = -10 V, VGs = -5 V, b = -4.6 A 6.5 nC
Gate-Drain Charge di 8
Gate Resistance Rg 1.0 2.6 4.4 Q
Turn-On Delay Time tam) 16 30
Rise Time tr VDD = -15 V, RL =15 Q 13 25
Turn-Off Delay Time tam ID E -1 A, VGEN = -10 V, Rs = 6 Q 56 100 ns
Fall Tlme tf 30 60
Source-Drain Reverse Recovery Time trr IF = -2.1 A, di/dt = 100 Alps 40 80
a. Pulsetest; pulse width s 300 us, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70836
S-31062-Rev. B, 26-May-03
VISHAY
Si4835DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50 1 1 50 I 1
Vss=6thru10V TC: -55°c
. 5 V 2src'
40 / 40 y
Ci.". Ci.:] 125°C
E 30 E 30
's 'r,
Es 20 4 V E' 20
Cl "---"" Cl
I a.....--- ,
D o,..--''''""'' C2
- IO - IO
2 V 3 V
'fits 1
0 I ( 0
0 2 4 6 8 10 O 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) Vss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 3500
g 0 15 I A Ciss
8 Lg 2500 _
f,-,' o5. 2000
a.) '6
a; 0.10 m
o 8 1500
if 0.05 7 VGs= 4.5V " 1000 Coss
h w,....,-"' "ss--..,,........,
-----"" VGS = 10 V 500
i i Crss
0.00 0
O 10 20 30 4O 50 O 6 12 18 24 30
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
10 Gate Charge 1 8 On-Resistance vs. Junction Temperature
F VDS=15V 1.6-VGs=10V l
2; 8- |D=4.6A a 10:80 A ,,,,,p'''''"
ll? ii' 1.4 /
g c A "
(D I','-',. 8 s,,,,-''"
g 6 IT, M 1.2 I
(,0, /" g E /
5.3 / o fl 1 0
$3 4 I v .
C) ' "E"
I ij?,- 0.8 //
8 2 y f
0 10 20 30 4O -50 -25 0 25 50 75 100 125 150
09 - Total Gate Charge (nC) To - Junction Temperature CC)
Document Number: 70836 www.vishay.com
S-31062-Rev. B, 26-May-03
Normalized Effective Transient
Si4835DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VISHAY
Thermal Impedance
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30 0.10
A 0.08
E T: = 150°C 'll
9; I','-'; 0.06
g 9 0.04
m It" ID = 8.0 A
f 0.02 -_-,
1 0.00
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 l l 80
0.8 ID = 250 WA 1
a /" l
ji, 0.4 ,,,/' g
a '- 40
'l, 0 2 / 'i,
E . a.
a / N,
0.0 20 ,
-0.2 "ss,
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T2
2. Per Unit Base = RthJA = 70°CNV
3. TJM - TA = PDMZthAm
4. Surface Mounted
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Document Number: 70836
S-31062-Rev. B, 26-May-03
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