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SI4834DYVISHAYN/a1948avaiDual N-Channel 30-V (D-S) MOSFET with Schottky Diode


SI4834DY ,Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31062—Rev. B, 26-May-031Si4834DYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWISE ..
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SI4834DY
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY Si4834DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY w
VDs (V) rDS(on) (Q) ID (A) US
30 0.022@VGS=10V 7.5 it (ol
0.030 @ VGS = 4.5 v 6.5 too
SCHOTTKY PRODUCT SUMMARY stde
. vso (v) J'
VDs (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
D1 D1 D2 D2
SO-8 lj'
ylr, .
_ in Schottky Diode I
G1 '- G2
Top IMw o
Ordering Information: Si4834DY s, S2
Si4834DY-T1 (with Tape and Reel)
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS i20
TA = 25°C 7.5 5.7
Continuous Drain Current (T J = 150°C)a ID
TA = 70°C 6.0 4.6
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" ls 1.7 0.9
TA = 25°C 2.0 1.1
M . P Di . ti a P W
axxmum ower Issnpa Ion TA = 70"C D 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
MOSFET Schottky
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 52 62.5 53 62.5
M . . - -A . a R
ax1mum Junction to mbient Steady-State th0A 93 110 93 110 'C/W
Maximum Junction-to-Foot (Drain) Steady-State Rthoc 35 4O 35 40
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71183 www.vishay.com
S-31062-Rev. B, 26-May-03 1
Si4834DY f,,sWAir'
Vishay Siliconix
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) VDs = N/ss, b = 250 11A 0.8 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V :t 100 nA
Ch-1 100
VDS = 24 V, VGS = 0 V Ch-2 1
Zero Gate Voltage Drain Current bss Ch-l 2000 11A
VDS=24V,VGS=0V,TJ=85°C Ch-2 15
On-State Drain Currentb IBM) VDS = 5 V, VGS = 10 V 20 A
V63: 10V, ID: 7.5A 0.018 0.022
Drain-Source On-State Resistanceb rDs(0n) - - Q
VGS - 4.5 V, ID - 6.5 A 0.024 0.030
Forward Transconductanceb gfs Vos = 15 V, ID = 7.5 A 22 S
Ch-1 0.47 0.5
Diode Forward Voltageb VSD ls = 1 A, VGS = o V cm 0.8 1.2 v
Dynamica
Total Gate Charge % 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A 2 n0
Gate-Drain Charge di 2.7
Gate Resistance Rg 0.5 1.9 3.2 Q
Turn-On Delay Time tdmn) 8 16
Rise Time tr 1/rxo=15V, RL=159 10 20
Turn-Off Delay Time td(off) ID _ 1 A, VGEN = 10 V, Rs = 6 Q 21 40
Fall Time If 10 20 ns
Ch-1 32 70
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/us Ch-2 40 80
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 ps. duty cycle 3 2%.
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF IF = 1.0 A, TJ = 125°C 0.36 0.42 V
v, = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm v, = 30 V, TJ = 100°C 0.7 10 mA
V,-- -30V,TJ=125°C 3.0 20
Junction Capacitance CT v, = 10 V 50 pF
www.vishay.com Document Number: 71183
2 S-31062-Rev. B, 26-May-03
VISHAY
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
20 _ 20
--'''""
Vss=10thru4V we''''"" 3V
16 / 16
Caf /" <3
E 12 f/ § 12
S 8 I' 8
' ' TC = 125''C /
- 4 - 4 1 y
2 V 25°C \1 I
t, : -55°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 1000 l
f...', 0.032 A 800
8 3 (Ns-. Ciss
g 0.024 VGS 4.5 V - ,ij. 600
8 VGS = 10 V g
I 0.016 ' 400 l "N
L 0.008 200 "s,. Crss
0.000 0
O 4 8 12 16 20 O 6 12 18 24 30
ID - Drain Current (A) I/os - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ " 1.6 _ _
S VDS=15V VGS=10V
v b=7.5A sp'' A lrs=7.5A /
8, 8 Cir 1.4
:2 m /
i', E G" w'''''
b' 6 / g 'il IQ 1
ac; “F E "
s) 8 5
(D I V
8 4 E 1.0
', if /
> 2 0.8 ,,,,,e"'
0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
DocumentNumber: 71183 www.vishay.com
S-31062-Rev. B, 26-May-03 3
Si4834DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.04
A b = 7.5 A
,ii..':.] I 0.03
"iz,' t'c,i, N,
o 8 'ss,
g 5 0.02
- .3 0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 40
ID = 250 uA
ii-,? -0.0
hi "ssc g
E -0.2 t,
> \ t \
g? a 20
> -0.4 'ss, l
-0.6 N. 10 N
"N, N,
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 url 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
.32 0.2
if'; g Notes:
[ti.', g -,,C,
8 o 0.1 DM
& .5 k
g 1.. tl
z 1. Duty Cycle, D = T2
2. Per Unit Base = Rth0A = 93°CNV
. 3. To, - TA = PDMZmJA")
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71183
S-31062-Rev. B, 26-May-03
VISHAY Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SGHOTTKY
20 Reverse Current vs. Junction Temperature Forward Voltage Drop
T: = 150°
g... 1 iii:,
Bi 0.01 I
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Temperature (°C) VF - Forward Voltage Drop (V)
Capacitance
0 'css::::::
40 a.--.-,
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Document Number: 71183 www.vishay.com
S-31062-Rev. B, 26-May-03 5
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