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SI4832DYVISHAYN/a10000avaiN-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4832DYSIN/a5avaiN-Channel 30-V (D-S) MOSFET with Schottky Diode


SI4832DY ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)ALimitParameter Parameter Symbol Symbol U ..
SI4832DY ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31062—Rev. F, 26-May-03 1Si4832DYVishay SiliconixMOSFET + SCHOTTKY SPECIFICATIONS (T = 25C UNLES ..
SI4832DY-T1 ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31062—Rev. F, 26-May-03 1Si4832DYVishay SiliconixMOSFET + SCHOTTKY SPECIFICATIONS (T = 25C UNLES ..
SI4833DY ,P-Channel, 30-V (D-S) Rated MOSFET + Schottky Diode  FaxBack 408-970-5600S-56941—Rev. B, 02-Nov-982-1Si4833DYVishay Siliconix 

SI4832DY
N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY
Si4832DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.018@VGS=10V 9
30 0.028 @ VGS = 4.5 v 7.3
SCHOTTKY PRODUCT SUMMARY
Vsn (V)
VDS (V) Diode Forward Voltage IF (A) l f
30 0.53 V @ 3.0 A 4.0
SO-8 o
Ordering Information:
Si4832DY '- L
S D Si4832DY-T1 (with Tape and Reel) E- Ai’ Schottky Diode
N-Channel MOSFET
Top Vew o
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Limit .
Parameter Symbol Unit
10 sec l Steady State
Drain-Source Voltage (MOSFET) 30
Reverse Voltage (Schottky) DS 30 V
Gate-Source Voltage (MOSFET) VGS i 20
TA = 25°C 9 6.9
Continuous Drain Current (T J = 150°C) (MOSFET)a, b ID
TA = 70°C 7.5 5.6
Pulsed Drain Current (MOSFET) IBM 50 A
Continuous Source Current (MOSFET Diode Conduction)' b ls 2.1 1.2
Average Foward Current (Schottky) IF 4.0 2.3
Pulsed Foward Current (Schottky) IFM 50
b TA = 25°C 2.5 1.4
M . P Di . . M FE a
axxmum ower issipation( OS T) TA = 70°C 1.6 0.9
TA = 25°C 2.0 1.2
Maximum Power Dissipation (Schottky)a, b
TA = 70°C 1.3 0.8
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 4O 50
Maximum Junction-to-Ambient (t s 10 sec)a
Schottky 50 60
R "C/W
MOSFET thJA 70 90
Maximum Junction-to-Ambient (t = steady state)a
Schottky 80 100
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 71774 www.vishay.com
S-31062-Rev. F, 26-May-03
Si4832DY \"SEHM'
Vishay Siliconix
MOSFET - SCHOTTKY SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 pA 1 V
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=30V, VGs= 0V 0.007 0.100
Zero Gate Voltage Drain Current = = = a
(MOSFET + Schottky) Koss VDS 30 V, VGS 0 V, TJ 100 C 1.5 10 mA
1/Ds=30V,Vss=0VTu= 125°C 6.5 20
On-State Drain Currenta Imon) VDS 2 5 V, VGS = 10 V 20 A
VGS=10V.ID=9A 0.012 0.018
Drain-Source On-State Resistancea rDS(on) Q
VGS = 4.5 V, ID = 7.3 A 0.019 0.028
Forward Transconductancea gfs Vos = 15 V, ID = 9 A 23 s
ls = 3.0 A, VGS = 0 V 0.493 0.53
Schottky Diode Forward Voltage8 VSD V
Is=3.0 A,VGS= 0V,TJ = 125°C 0.40 0.47
Dynamicb
Total Gate Charge Q9 13 24
Gate-Source Charge Qgs Vos = 15 V, VGS = 5 V, ID = 9 A 4 nC
Gate-Drain Charge di 5.6
Gate Resistance Rg 0.2 1.0 2.4 Q
Turn-On Delay Time td(on) 16 25
Rise Time tr VDD = 15 V, RL = 15 g 10 20
Turn-Off Delay Time tam ID 2 1 A, VGEN = 10 V, Re = 6 Q 35 50 ns
Fall Time tr 13 20
Source-Drain Reverse Recovery Time trr IF = 3.0 A, di/dt = 100 Alps 40 70
a. Pulsetest; pulse width 5 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71774
2 S-31062-Rev. F, 26-May-03
“5% Si4832DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 _ _ 50
// 1/Gs=10thru5V
Ci.':, 'iii'
E 4 V E
g 30 g 30
o l f o
.s /" .E
D 20 Q 20
D , co Tc = 125°C
10 10 pf
3 V 25°C ff
Lr,1 ff -55°C
0 1 2 3 4 5 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
(h10 1800
A 1500
Ci 0.08 'ss Cr
t; C' "ss.. I55
o E A---.-,
g 8 1200
ii 0.06 g l
ttt ID
a 8 900
' 0.04 I \ Coss
ff o 600 hc
V VGS = 4.5 V y 'ss
Lg .....--"' C "'"s---.,..__,
0.02 - rss
VGS = 10 v 300
(hoo 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 l I 1.6 l I
A VDS=15V ,,,/''' VGS=1OV
3 ID = 9 A / A 7 ID = 9 A /
a, 8 7 Ct 1.4
01 v "
f?, g G"
F? e .g f,d 1.2 I
08, if? ',,,w''"
g 4 ' V 1.0
8 / E"
' iii"
8 2 / f o 8 ./
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
Document Number: 71774 www.vishay.com
S-31062-Rev. F, 26-May-03 3
Si4832DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 a o.
if: T J= 150°C 8
93 55 o
5 .9 .
m 1 , .
w "j?,]
0.1 0.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage(V)
Reverse Current (Schottky)
'ir." 1
6' li.
g 0.1 "
'lt 0.01
25 50 75 100 125 150
TJ - Junction Temperature(°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 9.0A
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power (MOSFET)
0.1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 70°C/W
3. TJM - TA = PDMZmJAm
4, Surface Mounted
10 100 600
www.vishay.com
Document Number: 71774
S-31062-Rev. F, 26-May-03
“5% Si4832DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
Duty Cycle = 0.5
Notes:
-ly-1 _
1, Duty Cycle, D = T
2. Per Unit Base = Rth0A = 80°CIW
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = PoMirmoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Document Number: 71774 www.vishay.com
S-31062-Rev. F, 26-May-03 5
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