SI4828DY ,Dual N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-00983—Rev. A, 15-May-001Si4828DYNew ProductVishay Siliconix
SI4828DY
Dual N-Channel 30-V (D-S) MOSFET
VISHAY Si4828DY
New Product Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.022 v = _
Channel-1 @ GS 10 V 7 5
30 0.030 @ vGS = 4.5 v 55
0.0135 V = .
Channel-2 @ GS 10 V 9 8
0.0175@Vss=4.51/ 8.5
D1 D1 D2 D2
(3,o-1 G20J
Top View N-Channel 1 N-Channel 2
MOSFET MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Channel-1 Channel-2
Parameter Symbol 10 secs Steady State 10 secs Steady State Unit
Drain-Source Voltage V03 30 V
Gate-Source Voltage V68 l 20
TA = 25°C 7.5 5.8 9.8 7.5
Continuous Drain Current (To = 150°C)a ID
TA = 70°C 6 4.6 7.8 6 A
Pulsed Drain Current bs, 30 40
Continuous Source Current (Diode Conduction)" ls 1.8 1.06 1.8 1.06
TA=25°C 2 1.17 2 1.17
Maximum Power Dissipationa PD W
TA = 70°C 1.78 0.75 1.28 0.75
Operating Junction and Storage Temperature Range Tr Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Channel-1 Channel-2
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 55 62.5 53 62.5
Maximum Junction-to-Ambient" Rth0A
Steady-State 89 107 89 1 07 "C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJC 36 45 34 42
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71181 www.vishay.com . FaxBack 408-970-5600
S-00983-Rev. A, 15-May-00 1
Si4828DY VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typ Max Unit
Static
Ch-1 0.8
Gate Threshold Voltage VGS(th) VDs = vss, ID = 250 11A V
Ch-2 1.0
Gat Bod L k I V OVV 20V Ch-l 100 A
a e- 0 ea a e = , = n
y g GSS DS GS Ch-2 1 00
v -24vv -ov Ch-l 1
DS , GS Ch-2 1
Zero Gate Voltage Drain Current loss C 15 11A
V =24 V,V =0V,T =85°C
DS GS J Ch-2 15
On State Drain Current3 I V - 5 V V - 10 V Ch-1 20 A
D(on) DS , GS Ch-2 30
VGS = 10 V, ID = 7.5 A Ch-1 0.018 0.022
. . VGS = 10 V, ID = 9.8 A Ch-2 0.011 0.0135
Drain-Source On-State Resistance rDS(on) Q
VGS = 4.5 V, ID = 6.5 A Ch-1 0.024 0.030
VGS = 4.5 V, ID = 8.5 A Ch-2 0.0145 0.0175
VDS=15V, ID=7.5A Ch-1 17
Forward Transconductancea gfs S
Vos = 15 V, b = 9.8 A Ch-2 30
IS: 1.8 A,Vss-- 0V Ch-1 0.72 1.1
Diode Forward Voltagea VSD V
IS: 1.8 A,VGS= 0v Ch-2 0.72 IA
Dynamicb
Ch-1 8.0 12
Total Gate Charge Qg
Channel-l Ch-2 23 34
v.33: 15V, v65: 5V,ID= 7.5A Ch-l 1.75
Gate-Source Charge Qgs nC
Channel-2 Ch-2 8.6
VDS = 15 V, VGS = 5 V, ID = -9.8 A Ch-1 3.2
Gate-Drain Charge di
Ch-2 7.2
T O D I Ti t Ch-1 10 20
urn- n e a Ime
y d(on) Ch-2 17 30
Channel-I
- - Ch-1 5 1O
RiseTime tr N/DD=15V, Ru=15Q
|D§1A1VGEN=1OV1RG=BQ Ch-2 IO 20
Channel-? Ch-1 26 50
Turn-Off Delay Time td(ott) VDD = 15 V, RL = 15 Q Ch-2 60 100 ns
'0 ----1A,VGEN--10V,RG--60
Ch-1 10 16
Fall Time tt
Ch-2 17 30
IF = 1.8 A, di/dt = 100 Alps Ch-1 30 60
Source-Drain Reverse Recovery Time trr .
IF = 1.8 A, mid! = 100 uA/us Ch-2 40 70
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2 S-00983-Rev. A, 15-May-00
VISHAY
Si4828DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS =10thru 4 v
E 3 v 3‘;
g 18 m--''""-" g
o /"'" y
o 12 E
I \ 2 V
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.04 A
ors, 0.03 ..,i=i.
,1) VGS = 4.5 V g
6 0.02 VGS = 10 v I
LS 0.01
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
A Vos = 15 V
a b = 7.5 A A
ll,', 8 g,
g gt-;
8 .1) m
f] f n; E
s) / 8 2
9 4 I V
I " J)
g ,__/ f
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
CHANNEL"
Transfer Characteristics
TC = 125°C
25°C /
J \g/ _55oc
0 -da"g"i I I
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Capacitance
1000 t
Fs, Ciss
400 ' 's,
l "ss. Coss
'ss...,,
O 6 12 18 24 3O
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1.6 - ID = 7.5 A
1.4 //
1.2 //
0.8 /'/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
DocumentNumber: 71181
S-00983-Rev. A, 15-May-00
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Si4828DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL"
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A a 0.08
'f: TJ = 150°C t;
g It,'-',. 0.06
c?) ('3 0.04
I A 1.3 = 7.5 A
m fic.: N,
f 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
0 2 ID = 250 “A 80
ri,e', Ah0 it 60 k,
' AJ.2 "s, g N
g 'ss, tl. N
a Al 4 40
> 's, ‘1
Ah6 Nc \
'N, 20 N
"s,,.,
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
E a 0.2
if,' E Notes:
E a 0.1 T
l? g PDM
g -1 " _
o 0 02 t2 "
air . 1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 89°CIW
Single Pulse 3. Tou - TA = PDMzthJAm
4. Surface Mounted
10-4 10-3 Itr2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71181
S-00983-Rev. A, 15-May-00
VISHAY Si4828DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL"
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL-2
Output Characteristics Transfer Characteristics
VGS = 10 thru 4 V
(g' g.".
E 24 E 30
‘5 3 /
2 C Tc = 125°C )
Es 16 E 20
- 8 - IO 25°C
2 v 3 v \/
_ I -55l
0 l 0 I l
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.020 4200
A VGS = 4 5 V 3500 \ Ciss
o: 0.016 . _...-.-".
8 3 2800 3?
V = 1 V ©
f3 0.012 GS 0 E
ttt 8 2100
I 0.008 (f
"il'" o 1400
?if Coss
f 0 004 l
. 700 "---.,. Crss
0 8 16 24 32 4O 0 6 12 18 24 30
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Document Number: 71181 www.vishay.com . FaxBack 408-970-5600
S-00983-Rev. A, 15-May-00 5
Si4828DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL-Z
Gate Charge
v = 15 v /
I 8 - ID - 9.8 A / a
8 6 I .2 w
L. m .5
ol,, 4 IV
C) ' E
0 9 18 27 36 45
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
S, TJ = 150°C v
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0 2 ' ID = 250 ”A
'fe', . \
'h' Ah0 g
> 42 V t
"ii.' "N, a.
(7? 'sc
> 'ss,.
Ah6 "ss.
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
On-Resistance vs. Junction Temperature
Vss=10V /
1.6- ID=9.8A p"
1.4 ,/
w'''''
1.2 //
-50 -25 0 25 5O 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.02 (
N ID=9.8A
O 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
0.001 0.01 0.1 1 10
Time (sec)
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DocumentNumber: 71181
S-00983-Rev. A, 15-May-00
VISHAY
Si4828DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tO a.)
J-' g 0.2 Notes:
g o. PDM
ID - i
E , 0.1 11
8 t, t2 tl
€15 1.Duty Cycle,D= 7,
g 2. Per Unit Base = RthJA = 89°CIW
z 3. Ta, - TA = PDMZmJA“)
4. Surface Mounted
Single Pulse
10-4 10-3 Ity-it Io-l 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
g Duty Cycle = 0.5
TD 0.2
uh'. a
g F, 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71181 www.vishay.com . FaxBack 408-970-5600
S-00983-Rev. A, 15-May-00 7
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