SI4825DY ,P-Channel 30-V (D-S) MOSFETSi4825DYNew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFET
SI4825DY
P-Channel 30-V (D-S) MOSFET
VISHAY Si4825DY
New Product Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY tite
VDs(V) rosmmm low “Q
0.014@ sz = -10 v _1115 er os
-30 't It et "
0.022 @ VGS = -A.5 v -9.2 "sro'''
SO-8 11f
S G o-il.--,
s D I-
Top View HE
D D D D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage VGS i 25
TA=25°C -11.5 -8.1
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C -9.2 455 A
Pulsed Drain Current IBM -50
continuous Source Current (Diode Conduction)" ls -2.5 -12
TA = 25°C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70°C 1.9 0.9
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 32 42
Maximum Junction-to-Ambient" RthJA
Steady State 68 85 "C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 18
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71291 www.vishay.com . FaxBack 408-970-5600
S-10679-Rev. A, 31-Jul-00 1
Si4825DY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 [1A -1.0 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 25 V cl: 100 nA
VDs=-24V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
VDS = -24 V, VGS = 0 V, TJ = 55°C -5
On-State Drain Currenta IDmn) VDS s -5 V, VGS = -10 V -50 A
VGS=-10V, lD=-11.5A 0.012 0.014
Drain-Source On-State Resistancea fDS(on) Q
Vss---4.5 V, ID: Ah2A 0.018 0.022
Forward Transconductancea gfs Vos = -1 5 V, ID = -11.5 A 28
Diode Forward Voltagea VSD Is = -2.5 A, VGs = 0 V Ah8 -1.2 V
Dynamic''
Total Gate Charge Q9 55 71
Gate-Source Charge Qgs VDS = -15 V, VGS = -10 V, ID = -11.5 A 15.5 nC
Gate-Drain Charge di 7.5
Turn-On Delay Time td(on) 15 25
Rise Tlme tr VDD = _15 V, RL =15 g 13 20
Turn-Off Delay Time td(ott) ID 3 -1 A, VGEN = -1 0 V, R6 = 6 Q 97 150 ns
Fall Time k 51 75
Source-Drain Reverse Recovery Time In IF = -2.5 A, di/dt = 100 Alps 45 80
a. Pulse test; pulse width s 300 p5, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 I I 50
Veg: 10thru5V m.,..,..-------"""' /
40 // 40
iii". / ig"
E 30 E 30
E 20 E 20
f 3 V f TC = 125°C
10 10 i l
25°C /j!
D -55''C
0 1 2 3 4 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71291
S-10679-Rev. A, 31-Jul-00
VISHAY
Si4825DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
5 - o,,,,,,.''''''
V 0.020 VGs - 4.5 V 4
g ------"""
g 0.015
é VGS 10 V
I 0.010
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
v03 = 15 v /
E ID = 11.5 A /
0 12 24 36 48 60
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
rDS(on) — On-Resistance(9) C — Capacitance
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
4000 Iss,, C.
2000 (
1000 \ "sm.....
0 6 12 18 24 30
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l/GS-- 10V
ID=11.5A /
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
|D=11.5A
2 4 6 8 10
l/ss - Gate-to-Source Voltage (V)
Document Number: 71291
S-10679-Rev. A, 31-Jul-00
www.vishay.com . FaxBack 408-970-5600
Si4825DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
1 0 50
7 0.6 ID = 250 “A , N
[i 0.4 ,,,,,/' it
j',' o,,,w''' g
e 0.2 g
tr.' " 29
> o o 'N
-0.2 ,/ "s,
" "‘~--.
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-2 IO-I 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
3 a 0.1 ''r
(-i,' (E 0.05
ly, -ly-1 ta t1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 68°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
g E 0.1
Single Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71291
4 S-10679-Rev. A, 31-Jul-00
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