SI4824DY ,Asymmetrical Dual N-Channel 30-V (D-S) Rated MOSFET FaxBack 408-970-5600S-56946—Rev. C, 23-Nov-982-1Si4824DYVishay Siliconix
SI4824DY
Asymmetrical Dual N-Channel 30-V (D-S) Rated MOSFET
VISHAY
Si4824DY
Vishay Siliconix
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.040 V = 10V $4.7
N-Channel 1 @ GS
30 0.065 @ VGS = 4.5 V ce3.7
0.0175 V = 10 V ck 9
N-Channel 2 @ GS
0.027 @ VGS = 4.5 v 17.3
Top View
N-Channel MOSFET 1
N-Channel MOSFET 2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel 1 N-Channel 2 Unit
Drain-Source Voltage V95 30 30 V
Gate-Source Voltage VGS l 20 l 20
TA = 25°C d: 4.7 :t 9
Continuous Drain Current (TJ = 15ty'C)a, b ID
a-- 70°C i3] i7.2 A
Pulsed Drain Current IDM i 40 i 60
Continuous Source Current (Diode Conduction)' b Is 1.2 2.0
TA-- 25°C 1.4 2.25
Maximum Power Dissipation' b PD W
TA = 70°C 0.9 1.5
Operating Junction and Storage Temperature Range To, Tsig -55 to 150 -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 90
N-Ch 1
Steady State 125
Maximum Junction-to-Ambienta RthJA "Crt)
t 310 sec 55
N-Ch 2
Steady State 80
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
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Document Number: 70800
S-56946-Rev. C, 23-Nov-98
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Si4824DY
. . . . VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
N-Ch 1 1.0
Gate Threshold Voltage VGS(th) Vos = VGS, ID = 250 MA V
N-Ch 2 1.0
N-Ch 1 d: 100
Gate-Body Leakage less Vos = 0 V, VGS = $20 V nA
N-Ch 2 d: 100
N-Ch 1 1
VDs=24V,VGs=0V
N-Ch 2 1
Zero Gate Voltage Drain Current loss yA
N-Ch 1 5
VDs=24V,Ves= 0V, TJ=55°C
N-Ch 2 5
N-Ch 1 20
On-State Drain Currenta IBM) VDS 2 5 V, VGS = 10 V A
N-Ch 2 30
Vss = 10 V, ID = 4.7 A N-Ch 1 0.033 0.040
sz =10 V, ID = 9 A N-Ch 2 0.014 0.0175
Drain-Source On-State Resistances rDS(on) Q
Vss = 4.5 V, ID = 3.7 A N-Ch 1 0.048 0.065
VGs = 4.5 V, ID = 7.3 A N-Ch 2 0.020 0.027
VDs=15V,ID=4.7A N-Ch1 12
Forward Transconductancea 9ts s
VDS=15V,ID=9 A N-Ch2 25
IS=1.2 A,VGS= 0v N-Ch1 0.7 1.2
Diode Forward Voltagea VSD V
Is = 2.0 A, l/ss = 0 V N-Ch 2 0.7 1.2
Dynamic"
N-Ch 1 6.5 10
Total Gate Charge Qg
N-Channel 1 N-Ch 2 17.5 27
V =15V, V =5V,I =4.7A
DS GS D N-Ch 1 3.0
Gate-Source Charge Qgs N-Channel 2 nC
VDS=15V' Vss=5V,ID=9 A N-Ch2 7.5
N-Ch 1 2.5
Gate-Drain Charge di
N-Ch 2 6.5
N-Ch 1 10 20
Turn-On Delay Time tdon)
N-Ch 2 15 30
N-Channel 1
VDD=15V,RL=15£2 N-Ch1 12 20
RiseTime t I s-1A,V =10V,R =69
r D GEN G N-Ch 2 15 30
N-Channel 2
T OffD I T ta VDD=15V,RL=15§2 N-Ch1 20 35
urn- e a me = = = ns
y (off) ID _1A,VGEN 10V,RG 69 N-Ch2 45 70
N-Ch 1 10 20
Fall Time tr
N-Ch 2 20 35
IF = 1.2 A, di/dt = 100 Alps N-Ch 1 40 80
Source-Drain Reverse Recovery Time trr
IF = 2.0 A, di/dt = 100 A105 N-Ch 2 40 80
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. For design aid only; not subject to production testing.
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2-2 S-56946-Rev. C, 23-Nov-98
VISHAY
Si4824DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL 1
Output Characteristics
VGs=10thru 6V
tC ,)'/' 5 v
E 20 /
til 4 V
0 1 2 3 4
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
E}, VGS = 4.5 V
8 0.06
cy. "/
u; -......---''''" VGS = 10 v
C2 0.04
a 0.02
0 10 20 30 40
b - Drain Current (A)
Gate Charge
Vos = 15 V
57 8 - ID = 4.7 A
a'; -'
0 3 6 9 12
Q9 - Total Gate Charge (nC)
rDS(on) — On-Resistance( Q)
C — Capacitance (pF)
I D — Drain Current
(Normalized)
Transfer Characteristics
40 I l
TC = -55"C /
25°C /
30 'id
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
1000 \
Ns,,,, Ciss
"r--.--
400 ls,
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
1 55 On-Resistance vs. Junction Temperature
VGS = 10 v /'''
ID = 4.7 A /
1.15 /'''''
0.95 /
s,,,,,,,,,,,-'''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70800
S-56946-Rev. C, 23-Nov-98
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Si4824DY
. . . . VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL 1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
40 0.10
A 0.08
Ci" TJ 150 C v k
E IO E 0.06 ID = 4.7 A
E o; l,
c?) , 0.04 ss
fé’ 0.02
0 0.4 0.8 1.2 1.6 0 2 4 6 8 10
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.45 30
's, 24
0.05 "s,
F ID = 250 0A
g -0A5 ' 18
il Ah35 tu t 12 N
s. tl.
ii; 's,, N
> -0.55 ttti l
'N. 6 "
-0.75 'N,
N, ‘u...
-0.95 0
-50 -25 O 25 50 75 100 125 150 0.01 0.1 0 1 10 100 600
T J - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
1. Duty Cycle, D = T2
2. Per Unit Base = Rth0A =125°CNV
jj 0.2
g g 0.1 0.1 Notes:
0)) g 0.05 T
8 , 0.02 PDM
tte m i
tld g _
o q, . 1
(-,-", fE 0.01 Single Pulse -ly-1 12 "
3. TJM - TA = PDMZmJAm
4. Surface Mounted
104 10-3 1er IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
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b4 S-56946-Rev. C, 23-Nov-98
VISHAY
Si4824DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL 2
Output Characteristics
N/GS=10thru5N/
| D — Drain Current (A)
1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 v "
Kas-- 10V
rDS(on) — On-Resistance ( 9)
20 30 40 50 60
ID - Drain Current (A)
Gate Charge
Vos-- 15V
0 4 8 12 16 20 24 28 32
Q9 - Total Gate Charge (nC)
VGs — Gate-to-Source Voltage (V)
| D — Drain Current (A)
C — Capacitance (pF)
rDSmn) - On-Resistance( 9)
(Normalized)
Transfer Characteristics
Tc = 125°C
10 I I
l \J/ -55''C
o 1 2 3 4 5 6
VGS - Gate-to-Source Voltage(V)
Capacitance
2300 \\ Ciss
1600 (
"s Cass
cc''"''''-----,...,...,
0 6 12 18 24 30
VDs - Drain-to-Source Voltage (V)
1 5 On-Resistance vs. Junction Temperature
1.45 - VGS=10V /
ID = 9 A /
1.35 /"
1 25 //
1 15 ,,,/'
1 05 //
o 95 //
0.85 ,/
o 75 ',,,,w'''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70800
S-56946-Rev. C, 23-Nov-98
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Si4824DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL 2
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
60 0.04
T: = 150°C
A a 0.03
te g ID = 4.7 A
3 IO jg k
8 g 0.02
‘g c':
- 5‘; 0.01
0 0.4 0.8 1.2 1.6 0 2 4 6 8 10
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.50 50
0.25 "s,
's, 40
g 0.00 '0 = 250 MA
§ N. g
g -0.25 lg ,
> 'N it l
g." a 20
8 -0S0 'N
-0.75 \ N
N \~--.
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1 10 100 600
T J - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E E 0.1 0.1
t l? Notes:
u2. Ch -T-
8 E PDM
Ea-m k
o a) 11 _
(-,-", E 0.01 . -ly-l t2 t
g Single Pulse 1. Duty Cycle, D = T;
‘23 2. Per Unit Base = RNA = 80°C/W
3, TJM - TA = PDMZIhJAm
4. Surface Mounted
10-4 1o-3 Ity-2 IO-I 1
Square Wave Pulse Duration (sec)
10 100 600
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Document Number: 70800
S-56946-Rev. C, 23-Nov-98
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