SI4818DY-T1 ,Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31062—Rev. B, 26-May-033rV - Gate-to-Source Voltage (V)- On-Resistance ( ) I - Drain Current ..
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SI4818DY-SI4818DY-T1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY
Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.022 @VGS=10V 6.3
Channel-1
0.030 @ VGS = 4.5 v 5.4
30 0.0155@VGS=10V 9.5
Channel-2 0.0205 @ VGS = 4.5 v 8.2
SCHOTTKY PRODUCT SUMMARY
VSD (V)
VDs (V) Diode Forward Voltage IF (A)
30 0.50
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Ordering Information: Si4818DY
Si4818DY-T1 (with Tape and Reel)
N-Channel 1
MOSFET
Schottky Diode
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
ChanneI-1 Channel-2
Parameter Symbol 10 secs Steady State 10 secs l Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS 20
TA = 25°C 6.3 5.3 9.5 7.0
Contin o s D ainC rent T = 150°C a I
l u u r l u r ( J ) TA=70°C D 5.4 4.2 7.6 5.6
Pulsed Drain Current IBM 30 40
Continuous Source Current (Diode Conduction)" ls 1.3 0.9 2.2 1.15
TA = 25°C 1.4 1.0 2.4 1.25
Ma im mPo erDissi ationa P W
XI u w l IP I TA = 70°C D 0.9 0.64 1.5 0.80
Operating Junction and Storage Temperature Range T J, Tstg -65 to 150 “C
THERMAL RESISTANCE RATINGS
Channel-1 Channel-dt Schottky
Parameter Symbol Typ Max Typ Max Typ Max Unit
t s 10 sec 72 90 43 53 48 60
Maximum Junction-to-Ambienta RthJA
Steady-State 100 125 82 100 80 100 0 CAN
Maximum Junction-to-Foot (Drain) Steady-State RthJC 51 63 25 30 28 35
a. Surface Mounted on 1" x l" FR4 Board.
DocumentNumber: 71122 www.vishay.com
S-31062-Rev. B, 26-May-03
Si4818DY \"SEHM'
Vishay Siliconix
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Ch-1 0.8
Gate Threshold Voltage VSS(th) VDS = Vss, ID = 250 “A V
Ch-2 1.0
BodvL k I v VV 20V Ch-l 100 A
Gate- 0 y ea age GSS DS - 0 , GS - 0 Ch-2 100 n
v -24vv =0V Ch-l 1
DS - , GS - Ch-2 100
Zero Gate Voltage Drain Current 'Dss Ch 1 15 11A
VDS=24 MVss=0MTv=85 C Ch-2 2000
0 Stat D . C ttr I v =5V.V =10V Ch-l 20 A
n- a e ran urren D(on) DS - , GS - Ch-2 30
Vss = 10 V, ID = 6.3 A Ch-1 0.018 0.022
D . s o s R . b sz=10v, ID=95A am 0.0125 0.0155 Q
ram- ource n- tate esistance rDS(0n) VGS = 4.5 V, lo = 5.4 A Ch-1 0.024 0.030
VGS = 4.5 V, ID = 8.2 A Ch-2 0.0165 0.0205
VDs=15V,ID=6.3A Ch-1 17
Forward Transconductance gfs Vos = 15 V, ID = 9. 5 A Ch-2 28 S
. eb ls=1.3A,Vss=0V Ch-1 0.7 1.1
Diode Forward Voltag VSD ls = 1 A, VGs = 0 V Ch-2 0.47 0.5 V
Dynamica
Ch-1 8.0 12
Total Gate Charge 09
Channel-l Ch-2 15 23
VDS=15V. Vss-- 5Vb-- 6.3A Ch-l 1.75
Gate-Source Charge As nC
Channel-2 Ch-2 5.3
VDS=15 V, VGS=5V,|D=-9.5A Ch-1 3.2
Gate-Drain Char e Q
g gd Ch-2 4.6
. Ch-l 1.5 6.1
Gate Resistance Rg Ch-2 0.5 2.6 Q
Ch-l 10 20
Turn-On Delay Time tmn) Ch-2 15 30
Channel-l Ch 1 5 10
. VDD=15V,RL=15Q -
Rise Time t, ID -s1A,VGEN=10V, RG =69 Ch-2 5 10
Channel-2 Ch-l 26 50
Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 Q Ch-2 44 80 ns
FallTi ID----1A,VsEN=10V,Rs=6Q Ch-1 8 16
a me tt Ch-2 12 24
D . R R Ti IF = 1.3 A, di/dt = 100 AIMS Ch-l 30 60
Source- ram everse ecovery Ime trr IF = 2.2 A, di/dt = 100 uAlus Ch-2 32 70
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
SOHO I I KY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF =1.0 A 0.47 0.50
F d V It D V V
orwar 0 age mp F IF =1.0A,TJ=125°C 0.36 0.42
v, = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm v, = 30 V, T: = 100°C 0.7 10 mA
v, = -30 V, To =125°C 3.0 20
Junction Capacitance CT v, = 10 V 50 pF
www.vishay.com Document Number: 71122
2 S-31062-Rev. B, 26-May-03
VISHAY
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
ID — Drain Current(A)
rDS(on) - On—Resistance( Q)
Output Characteristics
VGS = 10 thru 4 V
2 4 6 8 IO
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 15 v
ID = 6.3 A
s,,/''"
0 3 6 9 12 15
Q9 - TotalGate Charge(nC)
rosmn) - On-Resistance(g2)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
/r'fsgi?/r/ /'"
0.0 0.5 1.0 1.5
2.0 2.5
3.0 3.5 4.0
I/ss - Gate-to-Source Voltage(V)
Capacitance
O 6 12 18 24 30
V08 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
- ID = 6.3 A
",,,-'""
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 71122
S-31062-Rev. B, 26-May-03
www.vishay.com
Si4818DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
40 0.10
A a 0.08
f? T: = 150°C 2;
8 10 'd
g It,'-'; 0.06
's c's
c?) 0 0.04
' c, ID = 6.3 A
tn :51 N,
'- 0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
A 0.2 ID = 250 0A
§ -0.0 g 60
'l -0.2 "s, t N
E "s EL
0 -0.4 u
> 's, \
-0.6 'Nc N,
"N, 20
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
"'fz,' Duty Cycle = 0.5
g E 0.2
2' E Notes:
i5 , -T-
g a 0.1 PDM
g .5 I
F, -lt-I ta t
a 1. Duty Cycle, D = T;
2. Per UnitBase = RmJA = 100°C/W
. 3, TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10c3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71122
S-31062-Rev. B, 26-May-03
VISHAY
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
s E 0.2
lt E 0.1
8 tg 0.1
(i' 15 0.05
sir 0.02
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS ttttV c UNLESS NOTED) CHANNEL-z
Output Characteristics
Transfer Characteristics
VCs = 10 thru 4 V
E 24 E 24
cc C Tc = 125''C f
E 16 E 16
CI o /
a co I
_ 8 3 v - 8 25°C
I tsd' 7
2 V -55 C
0 0 _ l
O 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vros - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.030 2500
A 's,,. Ciss
Cl 0.024 2000 _
g VGS = 4.5 V G"
Ei 0.018 8 1500
& VGS = 10 V o.
, 0.012 0 1000
(7)9 k Coss
f 0.006 500
"ss"........,
0.000 0
0 8 16 24 32 4O 0 6 12 18 24 30
ID - Drain Current(A) VDS - Drain-to-Source Voltage(V)
DocumentNumber: 71122 www.vishay.com
S-31062-Rev. B, 26-May-03
Si4818DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL-2
Gate Charge On-Resistance vs. Junction Temperature
E VDS=15V 1.6- VGS=10V /
b', 8 7 lro=9.5A a lro=9.5A w,,,,,,,,,,"
'l-,'. g 1.4 "
ii; S'. 6 w''''''
E 6 ii' E 1.2 I
8 L? E /
6 C ts
g 4 l a 1.0
I / a 0.8
o 2 L,
0 6 12 18 24 30 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A a 0.04
s T J = 150°C v
"fi' 10 '
‘5 I')',. 0.03
c?) O 0.02
I J, ID = 9.5 A
2 i,':-,''-, "--,
f 0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
I/so - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
0.2 _ ID = 250 WA l
o -0.0
E g 60 i,
g -0 2 'ttc g I
g." 'ss a
?o' 'N. 40 t
o -0.4
> "ss, \
-0.6 'ss,. 20
-0.8 N.
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature( C) Time (sec)
www.vishay.com Document Number: 71122
6 S-31062-Rev. B, 26-May-03
VISHAY
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Ji g 0.2 Notes:
, 'si, 2
'a,' E 0.1 fM
E E 0.1 t
-1 1 _
8 slr? t2 t1
(-ilre 1.Duty Cycle,D= T2
E 2. Per Unit Base = RNA = 82°CNV
z 3. TJM - TA = PDuzthoA(t)
. 4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
03?: 0.2
if',' g
It E 0.1
E 2 0.1
‘7; _ 0.05
a 0.02
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71122 www.vishay.com
S-31062-Rev. B, 26-May-03
Si4818DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
20 Reverse Current vs. Junction Temperature Forward Voltage Drop
T J = 150°C
E, 1 Ci:]
' "'iz,'
0 0.1 <3
CE 0.01 I
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
To - Temperature CC) VF - Forward Voltage Drop (V)
Capacitance
0 Issue,
0 6 12 18 24 30
V03 - Drain-to-Source Voltage (V)
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8 S-31062-Rev. B, 26-May-03
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