SI4802DY ,N-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resista ..
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SI4802DY
N-Channel 30-V (D-S) MOSFET
VISHAY
Si4802DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q)
ID (A) “Q
0.022 V =1OV
30 @ GS
0.030 @ N/ss = 4.5 v
3:: .tste,',t,f,t's'is's"t
OCDCDU)
Top Ihew
Ordering Information: Si4802DY
N-Channel MOSFET
Si4802DY-TI (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGS 120
TA = 25°C 8.4 6.1
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C 6.7 4.9
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)" ls 2.1 1.1
TA = 25°C 2.5 1.3
Maximum Power Dissipation" PD W
TA = 70°C 1.6 0.8
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 40 50
Maximum Junction-to-Ambienta RNA
Steady State 80 95 oc/w
Maximum Junction-to-Foot (Drain) Steady State Rm}: 20 25
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71114
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4802DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 20 A
N/ss = 10 V, ID = 8.4A 0.018 0.022
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5V, ID: 7.2A 0.024 0.030
Forward Transconductancea 9ts VDs = 15 V, ID = 8.4 A 22 S
Diode Forward Voltage" I/sro Is = 2.1 A, Veg = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 13 20
Gate-Source Charge Qgs VDs = 15 V, VGS = 10 V, ID = 8.4 A 2 nC
Gate-Drain Charge di 2.7
Gate Resistance R9 05 3.2 Q
Turn-On Delay Time thon) 8 16
Rise Time tr V00: 15V, RL=159 IO 20
Turn-Off Delay Time tam) ID _ 1 A, VGEN = 10 V, Re = 6 Q 21 40 ns
Fall Time tf IO 20
Source-Drain Reverse Recovery Tlme trr IF = 2.1 A, dildl = 100 Alps 40 80
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
--""'"
VGS=10thru4V ae'''''''" 3V
16 _ / 16
Ct ig"
if 12 I it' 12
S 8 S 8
l ' To = 125°C
- 4 - 4 o y
2V 25 c \1 I
L,iij2j -55 C
0 0 ' _
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
V05 - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71114
2-2 S-03951-Rev. B, 26-May-03
VISHAY
Si4802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.040 1000
fit 0.032 A 800
o k 'ss,
g V Ciss
g 0.024 Vss 4.5 V 7 g 600
8 VGS = 10 v ir
' 0.016 ' 400
ii- "ss.. oss
'- 0.008 200 Crss
'ss,.,,,.....'..',
0.000 0
0 4 8 12 16 20 O 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ /" 1.6 I _
VDS=15V Vss=101/
s. lro=8.4A sp'' A |D=8.4A /
g 8 g 1.4
g ID "
i', 2 "ii" w'''''
g 6 / 8 (il 1.2 1
(9) ttt E w"
( 6 sl?
tis" 4 I 1.0
IV) if r,,.,,-''"''
>0 2 I '- 0.8 l
O 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.04
10 TJ=150°C A lo-- MA
tC 2; 0.03 N,
I' S'.
8 ii "ss,
g 5 0.02 -
_ 8 0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71114 www.vishay.com
S-03951-Rev. B, 26-May-03
Si4802DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
ID = 250 WA
i) -0.0
o E 30
E -0.2 's. q.) l
> "N, g
gi" o. 20
i?," k
> -0.4
'ss, \
-0.6 N. IO 's,
-0.8 0
-5o -25 o 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
Il 8 0
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
g f? 1
_.L: v-
1. Duty Cycle, D = T;
2. Per Unit Base = RNA = 80°CIW
3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71114
2.4 S-03951-Rev. B, 26-May-03
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