SI4802DY ,N-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resista ..
SI4804BDY ,Dual N-Channel 30-V (D-S) MOSFETS-31062—Rev. B, 26-May-031Si4804BDYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWISE ..
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SI4800DY
N-Channel 30-V (D-S) MOSFET
VISHAY
Si4800DY
Vishay Siliconix
N-Channel Reducded 09, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) In (A)
30 0.0185@VGS=10V 9
O.033@VGS=4.5V 7
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Ordering Information: Si4800DY
Si4800DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS d: 25
TA = 25°C 9
Continuous Drain Current (T J = 150oC)a, b ID
TA = 70°C 7
Pulsed Drain Current (10 us Pulse VWdth) IDM 40
Continuous Source Current (Diode Conduction)", b ls 2.3
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70''C 1.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambient (MOSFETY1 RthJA °CNV
Steady State 70
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 70856 www.vishay.com
S-31062-Rev. B, 26-May-03
Si4800DY \"SEHAY'
Vishay Siliconix
MOSFET SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(1h) Ws = VGs, ID = 250 “A 0.8 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V l 100 nA
VDs=24N/,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=24V,VGS=0V,TJ=55°C 5
On-State Drain Currenta low”) Vos 2 5 M VGS = 10 v 30 A
VGS = 10 V, ID = 9 A 0.0155 0.0185
Drain-Source On-State Resistancea roam) Q
V68 = 4.5 V, ID = 7 A 0.0275 0.033
Forward Transconductancea gfs Vros = 15 V, ID = 9 A 16 S
Diode Forward Voltagea VSD ls = 2.3 A, VGS = 0 V 0.71 1.2
Dynamicb
Total Gate Charge % 8.7 13
Gate-Source Charge Qgs Vos = 15 V, VGS = 5.0 V, b = 9 A 2.25 nC
Gate-Drain Charge di 4.2
Gate Resistance Rg 0.5 1.5 2.6 Q
Turn-On Delay Time thon) 11 16
RiseTime tr VDD=15V,RL=15Q 8 15
Turn-Off Delay Time tum“) ID _ 1 A, VGEN = 10 V, R6 = 6 $2 22 30 ns
Fall Time tf 9 15
Source-Drain Reverse Recovery Tlme trr IF = 2.3 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 70856
2 S-31062-Rev. B, 26-May-03
VISHAY
Si4800DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D — Drain Current(A)
rDS(on) — On-Resistance ( Q)
VGS - Gate—to—Source Voltage(V)
Output Characteristics
VGS =10thru 5V
L,,.,,,,..,-----
2 4 6 8 10
Vros - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
VGS = 4.5 v /
"IL.,,,,,,..)
VGS = 10 V -
8 16 24 32 40
ID - Drain Current (A)
Gate Charge
VDs = 15 V
lro=9A
s,,/''''
3 6 9 12 15
% - TotaIGate Charge(nC)
rosmn) - On-Resistance(§z)
| D — Drain Current(A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
To = 125°C /
l \ -55°C
0 1 2 3 4 5
N/ss - Gate-to-Source Voltage(V)
Capacitance
O 5 IO 15 20 25 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
- ID = 9 A
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 70856
S-31062-Rev. B, 26-May-03
www.vishay.com
Si4800DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50 0.20
A a 0.16
5 10 TJ=150°C E 0.12 |D-9A
fl I 0.08
" 0.04 ,
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 l l 30
0.4 "s, |D=25011A 25 l
g -0.0 g \
m -0.2 'N. a 15 l
'l 's n? N.
V - .4
8 0 10
.05 \ 's,
's, “n.
-0.8 '"s.
''"----.
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Js E 0.2 Notes:
uf,' g 0.1 'i''"
E -1 11 _
13 E 0.05 te "
E I- l. Duty Cycle, D= -
F, 0.02 2. Per Unit Base = RNA = 125°CNV
a 3. TJM - TA = PDMZmJAm
. 4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70856
S-31062-Rev. B, 26-May-03
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