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SI4800BDY
N-Channel Reduced Qg, Fast Switching MOSFET
VISHAY
Si4800BDY
New Product
Vishay Siliconix
N-Channel Reduced 09, Fast Switching MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A) Q tt ,
30 0.0185@Vss=10V 9 P
0.030 @ N/cs = 4.5 v 7 8t
ti!NI'
S D G l
Top 1hew S
Ordering Information: Si4800BDY N-Channel MOSFET
Si4800BDY-TI (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGs $20 V
TA = 25°C 9 6.5
Continuous Drain Current (T: = 150°C)a, b TA = 70°C ID 7.0 5.0
Pulsed Drain Current (10 us Pulse VWdth) IBM 40 A
Continuous Source Current (Diode Conduction)' b Is 2.3
TA = 25''C 2.5 1.3
Maximum Power Dissipation' b TA = 7 0° C PD 1.6 0.8 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Limits
Parameter Symbol Typ Max Unit
t s 10 sec 40 50
Maximum Junction-to-Ambienta Steady-State RNA 70 95 'CA/V
Maximum Junction-to-Foot (Drain) Steady-State Rme 24 30
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 72124
S-31062-Rev. B, 26-May-03
www.vishay.com
Si4800BDY VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Ws = VGs, ID = 250 “A 0.8 1.8 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V l 100 nA
VDs=24N/,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=24V,VGS=0V,TJ=55°C 5
On-State Drain Currenta low”) Vos 2 5 M VGS = 10 v 30 A
VGS = 10 V, ID = 9 A 0.0155 0.0185
Drain-Source On-State Resistancea roam) Q
V68 = 4.5 V, ID = 7 A 0.023 0.030
Forward Transconductancea gfs Vros = 15 V, ID = 9 A 16 S
Diode Forward Voltagea VSD ls = 2.3 A, VGS = 0 V 0.75 1.2
Dynamicb
Total Gate Charge % 8.7 13
Gate-Source Charge Qgs Vos = 15 V, VGS = 5.0 V, b = 9 A 1.5 nC
Gate-Drain Charge di 3.5
Gate Resistance Re, 0.5 1.2 2.0 Q
Turn-On Delay Time tam) 7 15
Rise Time tr fo-- 15V, RL=15Q 12 2O
Turn-Off Delay Time tum) lo E 1 A, VGEN = 10 V, R6 = 6 Q 32 50 ns
Fall Time tf 14 25
Source-Drain Reverse Recovery Tlme trr IF = 2.3 A, di/dt = 100 Alps 30 60
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 72124
2 S-31062-Rev. B, 26-May-03
VISHAY
Si4800BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40 40 l _ l
VGS=1Othru5V 4V TC=-55°C /0
35 35 i 1 I
25oC ///
30 30 \7
Caf <3 gy
E 25 E 25 1
9 I' / 125°C
8 20 5 20
ch 15 ch 15
f 10 f 10 /
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 1200
A 1000 \
f...', 0.032 A
8 in Ci
g - tD 800 ' ss
25 VGS - 4.5 V g ""mm.
8 0.024 J2.
0F 8 '
8 l/ss = 10 v g 600
' 0.016 '
g o 400 \
8 ss c
0.008 ""s--...L'f
200 ---,
0.000 0 I
O 5 10 15 20 25 30 O 4 8 12 16 20
ID - Drain Current (A) I/os - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
6 _ _ s,//'r 1.8 _ _
VDS=15V VGS=10V
3 ID = 9 A A ID = 9 A /
m 5 - f a 1.6 -
S'. v/' a)
iii 4 I')', Iii" 1.4
2 '7: .5
a //'" g '
g 3 l 8 28 IQ /
g s/r ' v /
",' 2 I _iifr' 1.0
> 1 (h8 ,,,,w''''
O 0.6 w''''
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
DocumentNumber: 72124 www.vishay.com
S-31062-Rev. B, 26-May-03
Si4800BDY
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50 0.06
A 0.05
tl:.. I
"i' g 0.04
5 10 g ID = 9 A
g f? 0.03
3 5 N,
fl "s,
' E' 0.02 "'"---........
i" J) "'""----.
h 0.01
T J = 25°C
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 "ss, 150
0.2 "s,, 120
ID = 250 0A
ii-,? -0.0
o E 90
.2 "s. t l
tO >02 0
g? o. 60
> -o.4 'ss, \
-0.6 'ss l
-0.8 O
-50 -25 0 25 50 75 100 125 150 10-3 10-2 IO-l 1 10
T J - Temperature CC) Time (sec)
Safe Operating Area, Junction-to-Foot
Limited
by rDS(on) \
0.1 Tc = 25°C
Single Pulse
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
www.vishay.com Document Number: 72124
S-31062-Rev. B, 26-May-03
VISHAY
Si4800BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L:t|:_t
1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 70°C/W
3. TJM - TA = ProMZthoA(t)
4. Surface Mounted
10 100 600
E Duty Cycle = 0.5
d.) (D
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
"t' Duty Cycle = 0.5
s a 0.2
if',' g
E E 0.1
3 lg 0.1
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
Document Number: 72124
S-31062-Rev. B, 26-May-03
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