SI4736DY ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-05629—Rev. A, 18-Feb-02 1Si4736DYNew ProductVishay Siliconix ..
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SL431ASF , Programmable Voltage Reference
SL44 ,Low VF Surface Mount Schottky Rectifier, Forward Current 4.0A, Reverse Voltage 40VThermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbols SL42 SL43 SL44 UnitsDev ..
SL441C , ZERO VOLTAGE SWITCH
SL441C , ZERO VOLTAGE SWITCH
SL443A , ZERO VOLTAGE SWITCH
SL443A , ZERO VOLTAGE SWITCH
SI4736DY
N-Channel 30-V (D-S) MOSFET with Schottky Diode
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VISHAY
Si4736DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) In (A)
0.0095@VGS=10V 13
30 0.0105@Vss=4.5V 12
SCHOTTKY PRODUCT SUMMARY
VSD (V)
VDs (V) Diode Forward Voltage IF (A)
30 0.53 v @ 3.0 A 3.0
Top Mew
FEATURES
. TrenchFETo Power MOSFET
. Shoot-Thru -Free
APPLICAT
. DC/DC Converters Optimized for "Low-Side"
Synchronous Rectifier Operation
N-Channel
MOSFET
j 's, Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS cl: 12
TA = 25°C 13
C ti DrainC tT=150°Ca I
on anOUS ran urren ( J ) TA-- 70°C D 10
Pulsed Drain Current IBM 50
Continuous Source Current (Diode Conduction)a Is 5 3.0
TA=25°C 3.1 1.40
M . P Di . ti a P W
aXImum ower ISSlpa Ion TA = 70°C D 2.0 090
Operating Junction and Storage Temperature Range Tr Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ Max Unit
t s 10 sec 33 40
Maximum Junction-to-Ambienta RNA
Steady-State 70 85 "CAN
Maximum Junction-to-Foot (Drain) Steady-State Roo: 17 21
a. Surface Mounted on 1" x l" FR4 Board.
This data sheet contains preliminary speciMations that are subject to change.
Document Number: 71827 www.vishay.com
S-05629-Rev. A, 18-Feb-02
Si4736DY
Vishay Siliconix
New Product
VISHAY
MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, b = 250 WA 0.8 1.35 1.9 V
Gate-Body Leakage less VDS = 0 V, VGS = cl: 12 V cl: 100 nA
VDS = 24 V, VGS = 0 V 0.007 0.100
Zero Gate Voltage Drain Current loss VDs = 24 V, Veg = 0 V, TJ = 100°C 1.5 10 mA
VDS=24 VVss=0VTu= 125°C 6.5 20
On-State Drain Currentb IBM) VDS 2 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 13 A 00070 0.0095
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 4.5 V, ID = 12 A 0.0083 0.0105
Forward Transconductanceb gfs VDs = 15 V, ID = 13 A 56 S
ep ls = 3.0 A, VGS = O V 0.495 0.53
Di d F d V It V V
IO e orvmr () ag SD Is = 3.0 A, VGS = 0 V, Tu = 125°C 0.430 0.47
Dynamica
Total Gate Charge Q9 37 55
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 13 A 10 nC
Gate-Drain Charge di 8.8
Gate Resistance Re 0.8 Q
Turn-On Delay Time tam) 17 26
Rise Time tr Yoo-- 15V, RL=159 14 21
Turn-Off Delay Time timgt) lo E 1 A, VGEN = 10 V Re = 6 Q 102 155 ns
Fall Time tf 26 40
Source-Drain Reverse Recovery Time trr IF = 3.0 A, di/dt = 100 Alps 42 65
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us. duty cycle 5 2%.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
I/ss =10thru 3V
Ct iii:'.".
E’ 30 E 30
S 20 S 20
I I Tc = 150°C
© o I I
- 10 - 10 ,
25 c \l I
0 2 4 6 8 10 0.0 0.8 1.6 2.4 3.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage(V)
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Document Number: 71827
S-05629-Rev, A, 18-Feb-02
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VISHAY
Si4736DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
Vss-- 10V
I’Dsmn) - On-Resistance ( £2)
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
VDS=15V
- lro=13A
V GS — Gate-to-Source Voltage (V)
o 1 0 20 30 40 50
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
L Ciss
"s., oss
Crss ""---......
6 12 18 24 3O
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
lro=13A
Vss=101/
s,,,,,,,,,,-''''''"
-25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID: 13A
2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71827
S-05629-Rev. A, 18-Feb-02
www.vishay.com
. I=7'"
Si4736DY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Reverse Current vs. Junction Temperature Single Pulse Power
100 50
Ct" 40
it' 1 N
8 it 30
m 0.1 "
g D. 20
I 0.01
0 00 IO 'N
~~~~Il
0.0001 0
0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
I' a 0.2
lit ' th1 T
u L 0.1 PDM
Iz'jz' l
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 70°CIW
V 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
if',' g
tt a 0.1
Single Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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4 S-05629-Rev, A, 18-Feb-02
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