SI4558DY ,N/P-Channel 30-V (D-S) PairSi4558DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFET
SI4558DY
N/P-Channel 30-V (D-S) Pair
VISHAY Si4558DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.040@VGs=10V i6
N-Channel 30
0.060@VGS=4.5V 21:4.8
0.040@Vss=-10V i6
P-Channel -30
0.070 @ VGS = -A.5 v i4.4
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDs 30 -30
Gate-Source Voltage VGS i 20 i 20
TA = 25''C i 6 d: 6
Continuous Drain Current (To = 150°C)21 ID
a-- 70''C i4.7 $4.7
Pulsed Drain Current IDM cl: 30 i 30
Continuous Source Current (Diode Conduction)a Is 2 -2
TA = 25°C 2.4
Maximum Power Dissipationa PD W
TA = 70''C 1.5
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P- Channel Unit
Maximum Junction-to-Ambienta RthJA 52 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
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S-56944-Rev. E, 23-Nov-98 2-1
Si4558DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
V =V ,I =2500A N-Ch 1.0
Gate Threshold Voltage VGS(th) DS GS D V
VDs = Vss, ID = -250 “A P-Ch -1.0
Gate-Body Leakage less Vos = 0 V, VGS = l 20 V j: 100 nA
VDs = 30 V, VGS = 0 V N-Ch 1
Vos = -30 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current lrss “A
Vros = 24 V, VGS = 0 V, To = 70°C N-Ch 5
Vos = -24 V, VGS = o V, TJ = 70°C P-Ch -5
VDs= 5V,VGs=10V N-Ch 30
Vos = -5 v, VGS = -10 v P-Ch -30
On-State Drain Currentb Iman) A
VDS = 5 V, VGS = 4.5 V N-Ch 8.0
Vos = -5 V, VGS = -4.5 V P-Ch -8.0
VGS = 10 V, ID = 6 A N-Ch 0.032 0.040
VGS = -10 V, ID = -6 A P-Ch 0.032 0.040
Drain-Source On-State Resistanceb rDs(on) Q
VGS = 4.5 V, ID = 4.8 A N-Ch 0.045 0.060
VGS = -4.5 V, ID = .44 A P-Ch 0.056 0.070
VDS=15V,ID=6A N-Ch 13
Forward Transconductanceb gfs S
VDs=-15V,lD=-6A P-Ch 10.6
. Is = 2 A, VGS = 0 V N-Ch 0.77 1.2
Diode Forward Voltageb VSD V
ls = -2 A, VGS = 0 V P-Ch 0.77 -1.2
Dynamica
N-Ch 16 30
Total Gate Charge Qg
N-Channel P-Ch 22 35
Vros=15VVcs=10V,lo=6A N-Ch 3.4
Gate-Source Charge Qgs P-Channel P Ch nC
Vos = -15 V, VGS = -10 v - 5.4
ID = -6 A N-Ch 2.3
Gate-Drain Charge di
P-Ch 3.6
T O D I Ti t N-Ch 12 25
urn- n e ay Ime d(on)
P-Ch 12 25
N-Channel
N-Ch 12 25
Rise Time tr VDD = 15 v, RL = 15 Q
lros1A,VGEN=10V,RG=6Q P-Ch 12 25
Turn Off Delay Time td P-Channel N-Ch 27 55 ns
- (oft) VDD=-15V,RL=15Q
ID a -1 A, VGEN = -10 v, Rs = 6 Q P-Ch 38 55
N-Ch 24 50
Fall Time if P Ch
- 25 50
IF = 2 A, dildt = 100 Alps N-Ch 45 80
Source-Drain Reverse Recovery Time trr
IF = -2 A, di/dt = 100 A415 P-Ch 50 80
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 5 300 us, duty cycle 3 2%.
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Si4558DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
VGS = 10, 9, 8, 7, 6, 5V
ig" ii.::
5 18 E 18
eg , ,i 4V rg
.E 12 (i, 12
CI a Tc = 125Dc
- 6 - - 6 I I
3 V 25°C
0 1 2 3 4 5 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.150 1500
A 0 5 1200
V C" Ciss
g 0.100 9
oi). 8 900
32 0.075 't'
I - D.
8 VGS - 4.5 V 8 600
15 0.050 - _.....-- VGS =10V - I Ns,
s.. 0 Coss
g 300 "ss-dt.'.:
- 0.025 Crss
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.0
Vps=15V VGs=1OV
8-ID--6A " 1.6-C--'isA /4
1.2 o,,,,'''''
g 6 E a
b' /''" Es' hl /
u? a; g
p, 4 6 fl 0.8 w,,,,,-''''"
g ' c'" . r..-'''''"
i'' /- os
w 2 8 0.4
0 4 8 12 16 -50 0 50 100 150
0g - Total Gate Charge (nC) T: - Junction Temperature CC)
Document Number: 70633 www.vishay.com . FaxBack 408-970-5600
S-56944-Rev. E, 23-Nov-98
Si4558DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
T J = 150°C
A 0.08
g .,ij. 0.06
S a; \
o o 0.04
l ' ID = 6 A 'ss,.......,
w sSi?.
_ h' 0.02
TJ = 25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 40
0.2 ID = 250 11A
5 -0.0 "s, \
tD 'ss, 24
(i,' -0.2 "s C" N
E" t N
= CL 16
8 -0.4 _ h,
> "ss, "N
-0.6 %
'''''''''s--.,
-0.8 0
-50 0 50 100 150 0.01 0.1 1 10 30
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
ltr" 10-3
10-2 10-1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = t2
2. Per Unit Base = Rth = 52°C/W
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
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Document Number: 70633
S-56944-Rev. E, 23-Nov-98
VISHAY Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
30 I 30
I l ( - _ss,lc f
Vss=10,9,8,7,6,5V /" I f
24 24 25°C .
ig" ii.::
ti 18 ti 18 125°C -
3 4V t
.E 12 we''''''' (i, 12
- 6 - 6
0 2 4 6 8 10 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 2000
a 0.15 I 1500 N. Ciss
V C" \-
8 0.10 15 1000
o VGS = 4.5 v e,,,.,,p/' 8
JE I Coss
s.. ---- V = 1 V O
g 0.05 GS 0 - 500 "s,.,,,,.
.- Crss
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 / 2.0
A VDs=15V / VGs=10V
ty 8 - ID = 6 A A ID = 6 A /
g, /'" G 1.6
g E o,,,,,,,?
i', 6 / g a 1.4 f
L' Es' S v,,-''''"
D tn =
J?' KI;' E 1.2 "
.7. 4 o a 1 0 /
.03 V .
tD ' /
8 2 S /
0 5 10 15 20 25 -50 0 50 100 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70633 www.vishay.com . FaxBack 408-970-5600
S-56944-Rev. E, 23-Nov-98 2-5
Si4558DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A 0.08
tt T J = 150°C 3
g o5. 0.06
Jo' 6 0.04 's,
I I - 6 A
(l) g D s-------,,,..,..
_ 5 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 40
I 250 11A w,,,? 32
0.4 D f )
o 02 24
(s] " § N
' - o N
A -0.0 9 \
fu-i. / g 16
8 / h,
> -0.2 ',,,w''" "N
-0.4 N...-
'''''''''s--.,
-0.6 0
-50 0 50 100 150 0.01 0.1 1 10 30
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tt7 a)
to g 0.2
g l? Notes:
35 g 0.1 I
[tla', g 0.1 PFM
E (D _.L: _
215 12
g 1. Duty Cycle, D = +2
fl 2. Per Unit Base = Rth0A = 52°CNV
Single Pulse 3. TJM - TA = PDMZWA“)
4. Surface Mounted
ltr" 10-3
10-2 10-1
Square Wave Pulse Duration (sec)
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Document Number: 70633
S-56944-Rev. E, 23-Nov-98
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